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Patent # Description
2017/0330668 PERPENDICULAR MAGNETIC LAYER AND MAGNETIC DEVICE INCLUDING THE SAME
Embodiments of the inventive concepts provide a flat perpendicular magnetic layer having a low saturation magnetization and a perpendicular magnetization-type...
2017/0330667 SOLENOID DRIVER
A solenoid driver may be provided for a solenoid with a coil selectively energized by a power supply in a first polarity. An energy storage device may be...
2017/0330666 Solenoid Actuator
A solenoid actuator is described. The solenoid actuator comprises an armature, pole piece(s), electromagnet coil(s) arranged, in response to energisation, to...
2017/0330665 ARTICULATED VIDEO PROBE WITH MAGNETIC STIMULATION
A video probe is disclosed herein that includes an elongated probe including an articulating portion, and a controller functionally coupled with the elongated...
2017/0330664 RELUCTANCE TRANSDUCER
A reluctance transducer includes a soft ferromagnetic yoke and a soft ferromagnetic core element, which is movable relative to the yoke. Two permanent magnets...
2017/0330663 Superconducting Device With Coil Devices And Cooling Device
The present disclosure relates to a superconducting apparatus. The embodiments may include a system comprising at least two electrical coil devices and a...
2017/0330662 NOVEL HIGH-DENSITY MAGNETIC COMPOSITE MATERIAL FOR INDUCTOR
Disclosed is a novel high-density magnetic composite material for an inductor. The material is composed of 6-12% of high-temperature resin glue and 88-94% of...
2017/0330661 MAGNETIC POWDER, METHOD FOR PRODUCTION THEREOF, AND MAGNETIC RECORDING MEDIUM
A method for producing a magnetic powder includes performing a reduction treatment on the surface of particles including a hard magnetic material to form...
2017/0330660 IRON NITRIDE PERMANENT MAGNET AND TECHNIQUE FOR FORMING IRON NITRIDE PERMANENT MAGNET
A bulk permanent magnetic material may include between about 5 volume percent and about 40 volume percent Fe.sub.16N.sub.2 phase domains, a plurality of...
2017/0330659 PRODUCTION METHOD FOR R-T-B-BASED SINTERED MAGNET
A step of, while an RLM alloy powder (where RL is Nd and/or Pr; M is one or more elements selected from among Cu, Fe, Ga, Co, Ni and Al) and an RH oxide powder...
2017/0330658 HOT-PRESSED AND DEFORMED MAGNET COMPRISING NONMAGNETIC ALLOY AND METHOD FOR MANUFACTURING SAME
An R-TM-B hot-pressed and deformed magnet (here, R represents a rare earth metal selected from the group consisting of Nd, Dy, Pr, Tb, Ho, Sm, Sc, Y, La, Ce,...
2017/0330657 NANOCOMPOSITE MAGNETIC MATERIALS FOR MAGNETIC DEVICES AND SYSTEMS
Nanocomposite magnetic materials, methods of manufacturing nanocomposite magnetic materials, and magnetic devices and systems using these nanocomposite...
2017/0330656 WIRE-WOUND RESISTOR AND METHOD FOR MANUFACTURING SAME
To provide a wire-wound resistor provided with high reliability and that retains the basic functionality of the wire-wound resistor, and a method for...
2017/0330655 HIGH VOLTAGE (HV) IMPEDANCE DEVICE WITH SURFACE LEAKAGE PROOF CONFIGURATION APPLIED IN HV DIVIDER
A high voltage impedance device with surface leakage proof configuration is applied in a divider. Aforementioned divider is assembled by a high impedance...
2017/0330654 DIRECT WRITE DISPENSING APPARATUS AND METHOD
A direct write dispensing nozzle assembly and method of forming traces and twisted pairs via direct write dispensing. The method includes dispensing conductive...
2017/0330652 Multi-Core Cable and Production Method Therefor
Provided herein is a multi-core cable through which positions of a plurality of insulated conductors and a plurality of non-insulated conductors in a cross...
2017/0330651 CABLE WITH STRANDED WIRE PAIRS
A cable, such as a USB cable, having at least two pairs of strands, each of which is designed to transmit a differential data signal; in the longitudinal...
2017/0330650 SHIELDED CONDUCTIVE PATH
A shielding portion of a shielded conductive path (Wa) includes: a shielded pipe in which the inside thereof is partitioned into a plurality of electrical wire...
2017/0330649 ELECTRIC POWER CABLE
An electric power cable is provided, wherein the electric power cable comprises an organic silicon insulating coating layer capable of being cured at room...
2017/0330648 Jointed Power Cable And Method Of Manufacturing The Same
A power cable including a conductive core including a conductor including a plurality of sections, and an electrical insulation system enclosing the conductor,...
2017/0330647 Power Cable for Use with Artificial Lift Systems
A method for providing power to an artificial lift system includes providing at least two conductors, each conductor being an insulated conductor having...
2017/0330646 ENERGY CABLE HAVING A COLD-STRIPPABLE SEMICONDUCTIVE LAYER
Energy cable comprising, from the interior to the exterior, an electrical conductor, an inner semiconductive layer, an electrically insulating layer made from...
2017/0330645 DIRECT-CURRENT CABLE, COMPOSITION AND METHOD OF MANUFACTURING DIRECT-CURRENT CABLE
The direct-current cable includes a conductive portion; and an insulating layer covering an outer periphery of the conductive portion, the insulating layer...
2017/0330644 CHARGING CABLE HAVING FLEXIBILITY AT LOW TEMPEATURE AND OIL RESISTANCE
A charging cable is provided. The charging cable includes wires for supplying power, a wire for transferring a signal and a sheath, and exhibits substantially...
2017/0330643 AG ALLOY FILM FOR REFLECTING ELECTRODE OR WIRING ELECTRODE, REFLECTING ELECTRODE OR WIRING ELECTRODE, AND AG...
An Ag alloy film used for a reflecting electrode or an interconnection electrode, the Ag alloy film exhibiting low electrical resistivity and high reflectivity...
2017/0330642 Operational Neutron Source
The invention relates generally to nuclear engineering and more particularly to controlled reactor start-up. The invention improves reliability of an...
2017/0330641 Method of Nuclear Reactor Core Annealing and Nuclear Reactor
The method estimates the damaging dose of fast neutrons (dpa) which results in unacceptable degradation of paste-forming properties of steel. Upon achievement...
2017/0330640 MOLTEN SALT REACTOR CORE WITH REFLECTOR
While the described systems can include any suitable component, in some cases, they include a graphite reactor core defining an internal space that, in some...
2017/0330639 MOLTEN SALT REACTOR
Systems and methods for providing and using molten salt reactors are described. While the systems can include any suitable component, in some cases, they...
2017/0330638 NUCLEAR REACTOR FUEL ROD AND FUEL ASSEMBLY HAVING BUNDLED SAME
A nuclear reactor fuel rod is a fuel rod for a light-water reactor. The nuclear reactor fuel rod includes a fuel cladding tube and an end plug, both of which...
2017/0330637 FUEL ASSEMBLY FOR A NUCLEAR BOILING WATER REACTOR
A fuel assembly for a nuclear power boiling water reactor, including: a fuel channel defining a central fuel channel axis, fuel rods, each having a central...
2017/0330636 LASER AMPLIFICATION APPARATUS, LASER APPARATUS, AND LASER NUCLEAR FUSION REACTOR
The laser amplification apparatus is provided with a plurality of plate-shaped laser medium components (M1 to M4) which are disposed to be aligned along a...
2017/0330635 USING NON-VOLATILE MEMORY BAD BLOCKS
A system for using bad blocks in a memory system is proposed. The system includes accessing an identification of a plurality of bad blocks and corresponding...
2017/0330634 TEST MODE CIRCUIT WITH SERIALIZED I/O AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME
A semiconductor system may include a controller and a semiconductor device. The controller may output command/address signals. The semiconductor device may...
2017/0330633 SHIFT REGISTER, GATE DRIVING CIRCUIT CONTAINING THE SAME, AND METHOD FOR DRIVING THE SAME
The present disclosure provides a shift register, including: an input circuit, electrically connected to a triggering signal line that provides a triggering...
2017/0330632 NON-VOLATILE MEMORY DEVICES, OPERATING METHODS THEREOF AND MEMORY SYSTEMS INCLUDING THE SAME
Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a...
2017/0330631 DUMMY WORD LINE CONTROL SCHEME FOR NON-VOLATILE MEMORY
A memory system includes blocks (or other groupings) of memory cells including data memory cells and dummy memory cells. In order to mitigate program disturb...
2017/0330630 SEMICONDUCTOR DEVICE AND CONTROL METHOD OF THE SEMICONDUCTOR DEVICE
A controlling method of a semiconductor device provided with a memory array including a plurality of complementary cells, each cell including a first memory...
2017/0330629 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE WHICH PERFORMS IMPROVED ERASE OPERATION
According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell array and a control unit. The memory cell array includes a...
2017/0330628 NONVOLATILE MEMORY DEVICE INCLUDING SUB COMMON SOURCES
A nonvolatile memory device includes a memory block including a plurality of cell strings each of which includes memory cells electrically coupled with word...
2017/0330627 MEMORY CELL PROGRAMMING
Methods of operating a memory include applying a programming pulse having a particular voltage level to a selected access line connected to selected memory...
2017/0330626 3D NAND MEMORY Z-DECODER
Apparatus and methods are disclosed, including an apparatus having first and second units of vertically arranged strings of memory cells, each unit including...
2017/0330625 BLOCK DECODER AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME
There are provided a block decoder including a control signal generating circuit suitable for generating a control signal in response to address signals, a...
2017/0330624 MEMORY DEVICE HAVING VERTICAL STRUCTURE AND MEMORY SYSTEM INCLUDING THE SAME
A memory device has a vertical structure in which a row decoder, a page buffer, and a peripheral circuit are disposed under a memory cell array. The row...
2017/0330623 DUAL GATE SEMICONDUCTOR MEMORY DEVICE WITH VERTICAL SEMICONDUCTOR COLUMN
A memory device, an operating method of the memory device, and a fabricating method of the memory device are provided. A memory device includes: a...
2017/0330622 NON-VOLATILE RESISTIVE MEMORY CONFIGURATION CELL FOR FIELD PROGRAMMABLE GATE ARRAY
Providing for a configuration cells for junction nodes of a field programmable gate array (FPGA) is described herein. By way of example, a configuration cell...
2017/0330621 PATH ISOLATION IN A MEMORY DEVICE
Embodiments of the present disclosure describe techniques and configurations for word-line path isolation in a phase change memory (PCM) device. In one...
2017/0330620 PLANAR VARIABLE RESISTANCE MEMORY
An example memory device includes a planar semiconductor substrate layer; a planar variable resistance layer disposed above the planar semiconductor substrate...
2017/0330619 METHODS FOR PROGRAMMING 1-R RESISTIVE CHANGE ELEMENT ARRAYS
Methods for reading and programming one or more resistive change elements within a 1-R resistive change element array are disclosed. These methods include...
2017/0330618 LATCHING DEVICE AND METHOD
According to one embodiment of the present disclosure, an apparatus is provided. The apparatus comprises a data input to receive a data signal. The apparatus...
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