Easy To Use Patents Search & Patent Lawyer Directory

At Patents you can conduct a Patent Search, File a Patent Application, find a Patent Attorney, or search available technology through our Patent Exchange. Patents are available using simple keyword or date criteria. If you are looking to hire a patent attorney, you've come to the right place. Protect your idea and hire a patent lawyer.

Searching:





Search by keyword, patent number, inventor, assignee, city or state:




Patent # Description
2017/0352759 SEMICONDUCTOR DEVICE
A semiconductor device may include: a semiconductor substrate, a device isolating layer embedded within the semiconductor substrate and defining an active...
2017/0352758 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
The present disclosure relates to the technical field of semiconductors and discloses a semiconductor device and a manufacturing method therefor. Forms of the...
2017/0352757 FIELD EFFECT TRANSISTOR WHICH CAN BE BIASED TO ACHIEVE A UNIFORM DEPLETION REGION
A Field Effect Transistor including: a channel with one end designated the source and the other end designated the drain; a means for connecting to said source...
2017/0352756 SEMICONDUCTOR DEVICE AND METHOD OF MAKING
A semiconductor device is disclosed that includes a first region of a first conductivity type that includes a drain, a region of a second conductivity type...
2017/0352755 SEMICONDUCTOR DEVICE, FABRICATION METHOD FOR SEMICONDUCTOR DEVICE, POWER SUPPLY APPARATUS AND HIGH-FREQUENCY...
A semiconductor device is configured including a p-type back barrier layer provided over a substrate and formed from a p-type nitride semiconductor in which Mg...
2017/0352754 MULTI-STEP SURFACE PASSIVATION STRUCTURES AND METHODS FOR FABRICATING SAME
A gallium nitride (GaN) transistor which includes two or more insulator semiconductor interface regions (insulators). A first insulator disposed between the...
2017/0352753 FIELD-EFFECT TRANSISTOR
A field-effect transistor includes: a nitride semiconductor layer that includes a heterojunction; a source electrode and a drain electrode that are disposed on...
2017/0352752 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME, POWER SUPPLY DEVICE, AND HIGH-FREQUENCY AMPLIFIER
A semiconductor device includes: a nitride semiconductor multilayer; an insulating film disposed on the nitride semiconductor multilayer; and a gate electrode...
2017/0352751 SINGLE-ELECTRON TRANSISTOR WITH SELF-ALIGNED COULOMB BLOCKADE
Semiconductor devices and methods of making the same include forming a gate structure on a thin semiconductor layer. Additional semiconductor material is...
2017/0352750 NEUROMORPHIC DEVICES AND CIRCUITS
Provided are a neuromorphic device and a neuromorphic circuit using the neuromorphic device. The neuromorphic device is configured to include a first...
2017/0352749 LATERAL INSULATED-GATE BIPOLAR TRANSISTOR
A lateral insulated gate bipolar transistor comprises a substrate (10); an anode terminal located on the substrate, comprising: an N-type buffer region (51)...
2017/0352748 MODULATION DEVICE COMPRISING A NANODIODE
The invention relates to a modulation device created on a substrate (1), comprising at least one nanodiode in the form of a T fitted into a U, the channel (31)...
2017/0352747 SEMICONDUCTOR DEVICE
A semiconductor device includes: a semiconductor substrate having a drift layer; a base layer on the drift layer; a collector layer and a cathode layer...
2017/0352746 SEMICONDUCTOR DEVICE
A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved....
2017/0352745 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Described is a technique for uniformly doping a silicon substrate having a Fin structure with a dopant. A method of manufacturing a semiconductor device may...
2017/0352744 FIN FIELD EFFECT TRANSISTOR FABRICATION AND DEVICES HAVING INVERTED T-SHAPED GATE
A method of forming a fin field effect transistor (finFET), including forming a temporary gate structure having a sacrificial gate layer and a dummy gate layer...
2017/0352743 VERTICAL FIELD EFFECT TRANSISTORS WITH BOTTOM SOURCE/DRAIN EPITAXY
A vertical fin field-effect-transistor and a method for fabricating the same. The vertical fin field-effect-transistor includes a substrate, a first...
2017/0352742 VERTICAL FIELD EFFECT TRANSISTORS WITH BOTTOM SOURCE/DRAIN EPITAXY
A vertical fin field-effect-transistor and a method for fabricating the same. The vertical fin field-effect-transistor includes a substrate, a first...
2017/0352741 NOVEL EMBEDDED SHAPE SIGE FOR STRAINED CHANNEL TRANSISTORS
An integrated circuit die includes a silicon substrate. PMOS and NMOS transistors are formed on the silicon substrate. The carrier mobilities of the PMOS and...
2017/0352740 SEMICONDUCTOR DEVICE STRUCTURE WITH FIN STRUCTURE AND METHOD FOR FORMING THE SAME
A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a first fin...
2017/0352739 METHOD AND DEVICE FOR COMPOUND SEMICONDUCTOR FIN STRUCTURE
A method of manufacturing a semiconductor device includes forming a first semiconductor layer on a substrate, forming a stack of semiconductor layer structures...
2017/0352738 CONTACT FORMATION ON GERMANIUM-CONTAINING SUBSTRATES USING HYDROGENATED SILICON
A method and structure is provided in which germanium or a germanium tin alloy can be used as a channel material in either planar or non-planar architectures,...
2017/0352737 METAL SILICIDE, METAL GERMANIDE, METHODS FOR MAKING THE SAME
In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide...
2017/0352736 SEMICONDUCTOR PROCESS
A fin-shaped field effect transistor includes a substrate and a gate. The substrate includes an active area, where the active area includes a fin structure...
2017/0352735 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
A semiconductor memory device according to an embodiment, includes a pair of first electrodes, a semiconductor pillar, an inter-pillar insulating member, a...
2017/0352734 SPATIALLY DECOUPLED FLOATING GATE SEMICONDUCTOR DEVICE
A method includes forming a tunneling dielectric layer on a semiconductor substrate, a first portion of the tunneling dielectric layer is directly above a...
2017/0352733 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
In a semiconductor device, an interlayer insulating film electrically insulating a gate electrode and a source electrode has a structure in which a BPSG film...
2017/0352732 NONVOLATILE CHARGE TRAP MEMORY DEVICE HAVING A DEUTERATED LAYER IN A MULTI-LAYER CHARGE-TRAPPING REGION
A memory is described. Generally, the memory includes a number of non-planar multigate transistors, each including a channel of semiconducting material...
2017/0352731 THIN POLY FIELD PLATE DESIGN
The present disclosure relates to a high voltage transistor device having a thin polysilicon film field plate, and an associated method of formation. In some...
2017/0352730 SEMICONDUCTOR DEVICE
The present invention relates to a vertical semiconductor device such as an IGBT or a diode which includes an N buffer layer formed in the undersurface of and...
2017/0352729 SEMICONDUCTOR STRUCTURE WITH A SILICON GERMANIUM ALLOY FIN AND SILICON GERMANIUM ALLOY PAD STRUCTURE
A semiconductor structure is provided that includes a silicon germanium alloy fin having a second germanium content located on a first portion of a substrate....
2017/0352728 SEMICONDUCTOR DEVICES INCLUDING CONTACT STRUCTURES THAT PARTIALLY OVERLAP SILICIDE LAYERS
Semiconductor devices are provided. A semiconductor device includes a substrate. The semiconductor device includes an isolation layer defining active portions...
2017/0352726 METHODS FOR FORMING FIN STRUCTURES WITH DESIRED PROFILE FOR 3D STRUCTURE SEMICONDUCTOR APPLICATIONS
Methods for forming fin structures with desired profile and dimensions for three dimensional (3D) stacking of fin field effect transistor (FinFET) for...
2017/0352725 POWER SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Provided is a power semiconductor device comprising a gate electrode in a trench of a substrate; a body region having a first conductivity type on one side of...
2017/0352724 POWER SEMICONDUCTOR DEVICES, METHODS, AND STRUCTURES WITH EMBEDDED DIELECTRIC LAYERS CONTAINING PERMANENT CHARGES
Power devices using refilled trenches with permanent charge at or near their sidewalls. These trenches extend vertically into a drift region.
2017/0352723 Combined Gate Trench and Contact Etch Process and Related Structure
A method of forming a semiconductor device, the method comprises forming a gate trench and a contact trench concurrently in a semiconductor substrate using a...
2017/0352722 SEMICONDUCTOR RECTIFIER AND MANUFACTURING METHOD THEREOF
A semiconductor rectifying device and a method of manufacturing the same. The semiconductor rectifying device includes: a substrate of a first conductivity...
2017/0352721 C-PLANE GaN SUBSTRATE
A C-plane GaN substrate only mildly restricts the shape and dimension of a nitride semiconductor device formed on the substrate. The variation of an off-angle...
2017/0352720 METHOD AND DEVICE FOR USING AN ORGANIC UNDERLAYER TO ENABLE CRYSTALLIZATION OF DISORDERED ORGANIC THIN FILMS
Measurements on organic single crystals reveal remarkable optical and electrical characteristics compared to disordered films but practical device applications...
2017/0352719 METAL-OXIDE-METAL CAPACITOR
A metal-oxide-metal (MOM) capacitor is provided in the present invention. The MOM capacitor includes a capacitor element, wherein the capacitor element...
2017/0352718 ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
An organic light emitting diode display includes a substrate, a semiconductor, a gate electrode, a source electrode connected to a first portion of the...
2017/0352717 DISPLAY APPARATUS HAVING REDUCED DEFECTS
A display apparatus capable of reducing defects such as disconnections during manufacturing processes, while ensuring longer lifespan thereof. The display...
2017/0352716 ANISOTROPIC CONDUCTIVE FILM AND DISPLAY DEVICE USING THE SAME
An anisotropic conductive film includes a conductive layer; a first resin insulating layer over a first surface of the conductive layer; and a second resin...
2017/0352715 TFT ARRAY SUBSTRATE STRUCTURE BASED ON OLED
A thin film transistor (TFT) array substrate structure based on organic light-emitting diodes (OLEDs) may include multiple sets of TFT components, capacitors,...
2017/0352714 DISPLAY DEVICE
A display device includes at least one light-emitting element configured to emit blue light, a red conversion layer disposed on an upper or lower portion of...
2017/0352713 ORGANIC LIGHT EMITTING DIODE DISPLAY PANEL AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE CONTAINING THE SAME
An organic light emitting diode display panel is disclosed, which includes: a first substrate, having a display region and a non-display region; an organic...
2017/0352712 ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
An organic light-emitting display apparatus including a substrate; a pixel electrode on the substrate; a pixel-defining layer including an opening exposing at...
2017/0352711 MANUFACTURING METHOD OF TFT BACKPLANE AND TFT BACKPLANE
The present invention provides a manufacture method of a TFT backplate and a TFT backplate. By utilizing the oxide semiconductor to manufacture the switch TFT,...
2017/0352710 OLED PIXEL ARRANGEMENT STRUCTURE AND DISPLAY DEVICE
An OLED pixel arrangement structure includes multiple first sub-pixels, multiple second sub-pixels and multiple third sub-pixels. Four adjacent ones of the...
2017/0352709 ARCHITECTURE FOR VERY HIGH RESOLUTION AMOLED DISPLAY
Full-color pixel arrangements for use in displays and other devices, and devices including the same, are provided. The pixel arrangement includes a patterned...
← Previous | 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 | Next →

File A Patent Application

  • Protect your idea -- Don't let someone else file first. Learn more.

  • 3 Easy Steps -- Complete Form, application Review, and File. See our process.

  • Attorney Review -- Have your application reviewed by a Patent Attorney. See what's included.