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Patent # Description
2017/0352556 SUBSTRATE-PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A substrate processing apparatus includes a process chamber and a transfer device configured to transfer a plurality of substrates to a substrate retainer. The...
2017/0352555 SEMICONDUCTOR PACKAGE WITH MULTIPLE MOLDING ROUTING LAYERS AND A METHOD OF MANUFACTURING THE SAME
Embodiments of the present invention are directed to a method of manufacturing a semiconductor package with an internal routing circuit. The internal routing...
2017/0352554 SEMICONDUCTOR PACKAGE WITH MULTIPLE MOLDING ROUTING LAYERS AND A METHOD OF MANUFACTURING THE SAME
Embodiments of the present invention are directed to a method of manufacturing a semiconductor package with an internal routing circuit. The internal routing...
2017/0352553 ARTICLES AND METHODS OF FORMING VIAS IN SUBSTRATES
Methods of forming vias in substrates having at least one damage region extending from a first surface etching the at least one damage region of the substrate...
2017/0352552 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A method of manufacturing a semiconductor device may include forming a first stack structure by alternately stacking first material layers and second material...
2017/0352551 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor...
2017/0352550 DEPOSITION OF ORGANIC FILMS
Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate...
2017/0352549 VAPOR PHASE ETCHING OF HAFNIA AND ZIRCONIA
A method is described for vapor phase etching of oxide material including at least one of hafnia (HfO.sub.2) and zirconia (ZrO.sub.2), in the absence of plasma...
2017/0352548 CMP-FRIENDLY COATINGS FOR PLANAR RECESSING OR REMOVING OF VARIABLE-HEIGHT LAYERS
A method of manufacturing an integrated circuit device is provided. A first feature, which has a first susceptibility to damage by chemical mechanical...
2017/0352547 DELAY-ETCHING MEMBER AND DISPLAY PANEL ETCHING METHOD BY MEANS OF SAME
Provided is an etching delay element for forming a protruding portion at an object by shielding part of the object against etching, the etching delay element...
2017/0352546 METHOD OF ETCHING SEMICONDUCTOR STRUCTURES WITH ETCH GAS
Disclosed are sulfur-containing compounds for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in...
2017/0352545 METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER AND METHOD OF PRODUCING SOLID-STATE IMAGE SENSOR
Provided is a method of producing a semiconductor epitaxial wafer having enhanced gettering ability. The method of producing a semiconductor epitaxial wafer...
2017/0352544 WAFER COOLING METHOD
An ion implantation system has a first chamber and a process chamber with a heated chuck. A controller transfers the workpiece between the heated chuck and...
2017/0352543 COMPOSITION FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE...
A composition for manufacturing a semiconductor device includes at least one carbon-based compound that includes at least one of an alkyne group and an azide...
2017/0352542 NANOSCALE WIRES WITH TIP-LOCALIZED JUNCTIONS
The present invention generally relates to nanoscale wires and, in particular, to nanoscale wires with heterojunctions, such as tip-localized homo- or...
2017/0352541 METHOD FOR FABRICATING A FIN FIELD EFFECT TRANSISTOR (FINFET)
The invention provides a method for fabricating a fin field effect transistor (FinFET), comprising: providing a substrate having a logic region and a large...
2017/0352540 SPUTTERING APPARATUS, SPUTTERING TARGET, AND METHOD FOR FORMING SEMICONDUCTOR FILM WITH THE SPUTTERING APPARATUS
To provide a sputtering apparatus capable of forming a semiconductor film in which impurities such as hydrogen or water are reduced. The sputtering apparatus...
2017/0352539 MATERIAL HAVING SINGLE CRYSTAL PEROVSKITE, DEVICE INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOF
A method for forming a material having a Perovskite single crystal structure includes alternately growing, on a substrate, each of a plurality of first layers...
2017/0352538 Systems and Methods for Fabricating Single-Crystalline Diamond Membranes
A buffer layer is employed to fabricate diamond membranes and allow reuse of diamond substrates. In this approach, diamond membranes are fabricated on the...
2017/0352537 EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICES, ELECTRONIC DEVICE, METHOD FOR PRODUCING THE EPITAXIAL SUBSTRATE FOR...
An epitaxial substrate for electronic devices, including: a Si-based substrate; an AlN initial layer provided on the Si-based substrate; and a buffer layer...
2017/0352536 A METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP III-V MATERIALS AND SILICON WAFERS PROVIDING...
The present invention relates to a method of manufacturing semiconductor materials comprising interface layers of group III-V materials in combination with Si...
2017/0352535 METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND OPTOELECTRONIC SEMICONDUCTOR CHIP
A method of producing an optoelectronic semiconductor chip includes in order: A) creating a nucleation layer on a growth substrate, B) applying a mask layer on...
2017/0352534 ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE
A method for manufacturing an array substrate comprises forming a pattern including an active layer, a gate insulating layer and a gate on a base substrate,...
2017/0352533 DEPOSITION OF ORGANIC FILMS
Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate...
2017/0352532 INTEGRATED CIRCUIT DIE HAVING REDUCED DEFECT GROUP III-NITRIDE LAYER AND METHODS ASSOCIATED THEREWITH
Embodiments of the present disclosure are directed towards an integrated circuit (IC) die. In embodiments, an IC die may include a semiconductor substrate, a...
2017/0352531 APPARATUS AND METHOD FOR SELECTIVE DEPOSITION
Methods and apparatus for processing a substrate are described herein. Methods for passivating dielectric materials include forming alkyl silyl moieties on...
2017/0352530 ION INJECTION TO AN ELECTROSTATIC TRAP
Ions are injected into an orbital electrostatic trap. An ejection potential is applied to an ion storage device, to cause ions stored in the ion storage device...
2017/0352529 MASS SPECTROMETRY ANALYSIS OF BIOMOLECULES BY MULTIPLE CHARGE STATE SELECTION USING A CONCURRENT PRECURSOR...
A method is described for the analysis of biological polymers, for example, intact proteins or oligonucleotides, by mass spectrometry. This method produces...
2017/0352528 Apparatus and method for static gas mass spectrometry
A method of static gas mass spectrometry is provided. The method includes the steps of: introducing a sample gas comprising two or more isotopes to be analyzed...
2017/0352527 TIME OF FLIGHT MASS SPECTROMETER
A time of flight mass spectrometer that includes a first electrode; and a second electrode that is spaced apart from the first electrode. The ion source is...
2017/0352526 REFLECTRON-ELECTROMAGNETOSTATIC CELL FOR ECD FRAGMENTATION IN MASS SPECTROMETERS
Reflectron-electromagnetostatic cells for use in mass spectrometers are provided herein that cause ion packets to pass through the cell a plurality of times...
2017/0352525 ANALYSIS DATA PROCESSING METHOD AND DEVICE
When conducting imaging mass analysis for a region to be measured on a sample, an individual reference value calculating part obtains a maximum value in...
2017/0352524 Advanced Exhaust System
An apparatus for a semiconductor process includes an exhaust pipe coupled to a reaction chamber and a pump; a pressure control valve that is coupled to the...
2017/0352523 HIGH-FREQUENCY POWER SOURCE
[OBJECT] To provide a radio-frequency power source capable of outputting radio-frequency power having a desired waveform changing at high speed. [SOLUTION] A...
2017/0352522 METHOD FOR PRODUCING PATTERNS BY ION IMPLANTATION
A method for forming reliefs on the surface of a substrate, including a first implantation of ions in the substrate according to a first direction; a second...
2017/0352521 ION SOURCES AND METHODS FOR GENERATING ION BEAMS WITH CONTROLLABLE ION CURRENT DENSITY DISTRIBUTIONS OVER LARGE...
The presently disclosed ion sources include one or more electromagnets for changing the distribution of plasma within a discharge space of an ion source. At...
2017/0352520 MULTI CHARGED PARTICLE BEAM EXPOSURE METHOD, AND MULTI CHARGED PARTICLE BEAM EXPOSURE APPARATUS
A multi charged particle beams exposure method includes assigning, with respect to plural times of shots of multi-beams using a charged particle beam, each...
2017/0352519 ENERGY FILTER FOR PROCESSING A POWER SEMICONDUCTOR DEVICE
A method of producing an implantation ion energy filter, suitable for processing a power semiconductor device. In one example, the method includes creating a...
2017/0352518 X-RAY DIAGNOSTIC APPARATUS AND MEDICAL-INFORMATION PROCESSING APPARATUS
An X-ray diagnostic apparatus comprises an X-ray tube and processing circuitry. The X-ray tube includes a rotary anode. The processing circuitry is configured...
2017/0352517 Ion Beam Device
In order to provide an ion beam apparatus excellent in safety and stability even when a sample is irradiated with hydrogen ions, the ion beam apparatus...
2017/0352516 DETECTING SYSTEM BASED ON TERAHERTZ WAVE
The disclosure relates to a detecting system including a terahertz wave source, a detector and a controlling computer. The terahertz wave source includes a...
2017/0352515 DISCRETE DYNODE ELECTRON MULTIPLIER FABRICATION METHOD
A process of fabricating a discrete-dynode electron multiplier (DDEM) including the steps of mounting an insulator block to a conductor block, and forming a...
2017/0352514 HOLLOW FUSE BODY WITH NOTCHED ENDS
Hollow bodies and hollow body fuses are disclosed. Furthermore, methods to provide hollow bodies and hollow body fuses are disclosed. In one implementation, a...
2017/0352513 CIRCUIT BOARD ENCLOSURE WITH SECURITY FEATURES PREVENTING DISASSEMBLY OR DISENGAGEMENT
A circuit board enclosure comprises a circuit breaker, platform, base, cover, and circuit board. The circuit breaker includes two conductors and a plate, which...
2017/0352512 APPARATUS AND METHOD FOR POWERING A COIL OF LATCHING RELAYS AND HYBRID SWITCHES
Apparatus and method for latching one pole contact of at least one springy pole in a relay or hybrid switch for maintaining an engaging or disengaging state of...
2017/0352511 RELAY
A movable member is configured to switch, by rotation, between a first state and a second state. In the first state, the movable member presses a plurality of...
2017/0352510 THERMAL RESPONSE SWITCH
A thermally responsive switch includes a heating element with a meandering portion formed of a metal plate. The meandering portion is bent twice with respect...
2017/0352509 HIGH-VOLTAGE ELECTRICAL CIRCUIT BREAKER DEVICE WITH OPTIMISED AUTOMATIC EXTINCTION
A self-blast electric interrupter device, such as a circuit breaker or a disconnector, the device comprising: a first contact and a second contact that are...
2017/0352508 HIGH VOLTAGE DC CIRCUIT BREAKER
Provided is a high voltage DC circuit breaker that interrupts a fault current flowing through a high voltage DC transmission line with a vacuum circuit breaker...
2017/0352507 ELECTROMAGNETIC REPULSION ACTUATOR FOR CIRCUIT BREAKER
An electromagnetic repulsion actuator for a circuit breaker is provided. The actuator can include a housing; a first fixed electrode having therein an...
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