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Patent # Description
2017/0358675 PRECISE CONTROL OF VERTICAL TRANSISTOR GATE LENGTH
Transistor and methods of forming the same include forming a channel fin on a bottom source/drain region. A dielectric fill is formed around the channel fin...
2017/0358674 SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME
A semiconductor device includes a substrate and a thin film transistor supported by the substrate. The thin film transistor includes a gate electrode, an oxide...
2017/0358673 AIRGAP SPACERS
Semiconductor devices with airgap spacers and methods of forming the same include forming a lower spacer that defines a gate region. A sacrificial upper spacer...
2017/0358672 SELF-ALIGNED SHALLOW TRENCH ISOLATION AND DOPING FOR VERTICAL FIN TRANSISTORS
A method of forming a vertical fin field effect transistor (vertical finFET) with a self-aligned shallow trench isolation region, including forming a pinch-off...
2017/0358671 SEMICONDUCTOR DEVICE
A semiconductor device includes a transistor, a semiconductor layer, an active region and a conductive layer. The active region is in the semiconductor layer....
2017/0358670 DIAMOND ON III-NITRIDE DEVICE
Systems and method are provided for depositing metal on GaN transistors after gate formation using a metal nitride Schottky gate. Embodiments of the present...
2017/0358669 Trench IGBT With Waved Floating P-Well Electron Injection
A trench IGBT includes a floating P well and a floating N+ well that extends down into the floating P well. A bottom surface of the floating P well has a novel...
2017/0358668 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A method for manufacturing a semiconductor device includes preparing a wafer that includes semiconductor elements, placing the wafer on a stage so that a...
2017/0358667 METHODS OF FORMING A BIPOLAR TRANSISTOR HAVING A COLLECTOR WITH A DOPING SPIKE
This disclosure relates to methods of forming bipolar transistors, such as heterojunction bipolar transistors. The methods may include forming a sub-collector...
2017/0358666 SELF-ALIGNED FINFET FORMATION
A method for fabricating a semiconductor device comprises forming a first hardmask, a planarizing layer, and a second hardmask on a substrate. Removing...
2017/0358665 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A method of manufacturing semiconductor device includes forming a plurality of sacrificial layers and a plurality of semiconductor layers repeatedly and...
2017/0358664 SELECTIVELY FORMED GATE SIDEWALL SPACER
A method for forming a semiconductor device comprises forming a fin on a substrate and forming a sacrificial gate over a channel region of the fin. A hydrogen...
2017/0358662 SELF-ALIGNED FINFET FORMATION
A method for fabricating a semiconductor device comprises forming a first hardmask, a planarizing layer, and a second hardmask on a substrate. Removing...
2017/0358661 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
The present disclosure provides a method for forming a semiconductor device, including: providing a substrate; forming a gate material layer over the...
2017/0358660 FABRICATION OF A VERTICAL FIN FIELD EFFECT TRANSISTOR (VERTICAL FINFET) WITH A SELF-ALIGNED GATE AND FIN EDGES
A method of forming a vertical fin field effect transistor with a self-aligned gate structure, comprising forming a plurality of vertical fins on a substrate,...
2017/0358659 FRINGE CAPACITANCE REDUCTION FOR REPLACEMENT GATE CMOS
A replacement metal gate transistor structure and method with thin silicon nitride sidewalls and with little or no high-k dielectric on the vertical sidewalls...
2017/0358658 METAL OXIDE METAL FIELD EFFECT TRANSISTORS (MOMFETS)
Embodiments of the invention include metal oxide metal field effect transistors (MOMFETs) and methods of making such devices. In embodiments, the MOMFET device...
2017/0358657 METHOD FOR MANUFACTURING LATERALLY INSULATED-GATE BIPOLAR TRANSISTOR
The present invention relates to a method for manufacturing a laterally insulated-gate bipolar transistor, comprising: providing a wafer having an N-type...
2017/0358656 FIN CUT WITHOUT RESIDUAL FIN DEFECTS
A method of forming semiconductor fins is provided. Sacrificial fins are provided on a surface of substrate. A hard mask layer, formed around the sacrificial...
2017/0358655 SHARED METAL GATE STACK WITH TUNABLE WORK FUNCTION
Semiconductor devices and methods of forming the same include forming a work function stack over semiconductor fins in a first region and a second region, the...
2017/0358654 SEMICONDUCTOR DEVICE AND METHOD OF FORMING VERTICAL STRUCTURE
According to an exemplary embodiment, a method of forming a vertical structure is provided. The method includes the following operations: providing a...
2017/0358653 Semiconductor Structure With Enlarged Gate Electrode Structure And Method For Forming The Same
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate stack structure formed over a substrate....
2017/0358652 SEMICONDUCTOR DEVICE WITH SILICON NITRIDE FILM ON NITRIDE SEMICONDUCTOR LAYER AND MANUFACTURING METHOD THEREOF
In order to improve the characteristics of a semiconductor device including: a channel layer and a barrier layer formed above a substrate; and a gate electrode...
2017/0358651 CAPACITIVELY-COUPLED FIELD-PLATE STRUCTURES FOR SEMICONDUCTOR DEVICES
Field-plate structures are disclosed for electrical field management in semiconductor devices. A field-plate semiconductor device comprises a semiconductor...
2017/0358650 Semiconductor Device Comprising a Transistor Including a First Field Plate and a Second Field Plate
A semiconductor device includes a transistor in a semiconductor substrate. The transistor includes a drift zone of a first conductivity type adjacent to a...
2017/0358649 Method of Manufacturing a Semiconductor Device Having an Impurity Concentration
A method of manufacturing a semiconductor device includes irradiating the semiconductor body with particles through a first side of the semiconductor body,...
2017/0358648 Strained Channel Field Effect Transistor
Various strained channel transistors are disclosed herein. An exemplary semiconductor device includes a substrate and a fin structure disposed over the...
2017/0358647 PROCESS OF FORMING AN ELECTRONIC DEVICE INCLUDING A MULTIPLE CHANNEL HEMT
An electronic device can include a HEMT including at least two channel layers. In an embodiment, a lower semiconductor layer overlies a lower channel layer,...
2017/0358646 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes one nanowire structure disposed on semiconductor substrate and extending in first direction on semiconductor substrate. Each...
2017/0358645 HIGH MOBILITY NANOWIRE FIN CHANNEL ON SILICON SUBSTRATE FORMED USING SACRIFICIAL SUB-FIN
An integrated circuit die includes a quad-gate device nanowire of channel material for a transistor (e.g., single material or stack to be a channel of a MOS...
2017/0358644 SEMICONDUCTOR DEVICE AND FORMATION THEREOF
A semiconductor device and methods of formation are provided herein. A semiconductor device includes a conductor concentrically surrounding an insulator, and...
2017/0358643 METHOD AND STRUCTURE FOR IMPROVING FINFET WITH EPITAXY SOURCE/DRAIN
Isolation structures are formed to laterally surround a gate material block such that each sidewall of the gate material block abuts a corresponding sidewall...
2017/0358642 DISPLAY DEVICE
A display device includes: a substrate; and a plurality of pad terminals on the substrate, wherein each of the plurality of pad terminals includes a lower...
2017/0358641 DISPLAY DEVICE
A display device includes a substrate including a display area and a peripheral area disposed around the display area. The peripheral area includes a bending...
2017/0358640 ORGANIC LIGHT-EMITTING DIODE DISPLAY
An organic light emitting diode (OLED) display includes: a first electrode around a center point of a virtual tetragon, e.g., a virtual square; second...
2017/0358639 FLEXIBLE LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING FLEXIBLE-LIGHT EMITTING DEVICE
It is an object to provide a flexible light-emitting device with long lifetime in a simple way and to provide an inexpensive electronic device with long...
2017/0358638 LUMINESCENT DEVICE AND PROCESS OF MANUFACTURING THE SAME
In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as...
2017/0358637 DISPLAY DEVICE AND FABRICATING METHOD THEREOF
A display device including a first substrate, an organic light emitting layer on the first substrate and including a protrusion, and a pixel circuit including...
2017/0358636 DISPLAY DEVICE
A display device including a display panel that displays an image, and a supporting layer positioned on one surface of the display panel. The supporting layer...
2017/0358635 DISPLAY DEVICE
To provide a display device capable of lowering power consumption while reducing a weight by using the organic electroluminescence element for the backlight. ...
2017/0358634 DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
A display device includes a substrate having a red pixel region, a blue pixel region, and a green pixel region. An anode is on the substrate, a light-emitting...
2017/0358633 ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
An organic light-emitting display apparatus includes a substrate, a pixel electrode disposed on the substrate, a pixel-defining layer (PDL) disposed on the...
2017/0358632 OLED LIGHTING DEVICE WITH SHORT TOLERANT STRUCTURE
A first device that may include a short tolerant structure, and methods for fabricating embodiments of the first device, are provided. A first device may...
2017/0358631 DISPLAY DEVICE
A display device includes a plurality of first detection electrodes that are respectively disposed in a plurality of first areas, which are shaped in a stripe...
2017/0358630 ORGANIC LIGHT-EMITTING DISPLAY DEVICE INCLUDING THIN-FILM SOLAR CELL AND METHOD OF MANUFACTURING THE ORGANIC...
An organic light-emitting display device having an integrated thin-film solar cell includes a substrate, a display disposed in a first area on the substrate to...
2017/0358629 PHASE CHANGE MEMORY STACK WITH TREATED SIDEWALLS
Memory devices and methods for fabricating memory devices have been disclosed. One such memory device includes a first electrode material formed on a word line...
2017/0358628 CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME
A cross-point memory array includes a plurality of variable resistance memory cell pillars. Adjacent memory cell pillars are separated by a partially filled...
2017/0358627 SELECT DEVICE FOR MEMORY CELL APPLICATIONS
The present disclosure includes select devices and methods of using select device for memory cell applications. An example select device includes a first...
2017/0358626 VERTICAL MEMORY STRUCTURE WITH ARRAY INTERCONNECTS AND METHOD FOR PRODUCING THE SAME
Disclosed herein is a method and apparatus for fabricating a memory device. The memory device has a vertical stack of alternating layers of conductive and...
2017/0358625 HIGH EFFICIENCY LEDS AND LED LAMPS
In various embodiments, lighting systems include an electrically insulating carrier having a plurality of conductive elements disposed thereon and a...
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