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Patent # Description
2018/0013027 ADHESIVE FOR LIGHT REDIRECTING FILM
The present disclosure relates to adhesives useful in preventing drifting during lamination of light redirecting films applied to photovoltaic cells. The...
2018/0013024 SOLAR CELL MODULE AND METHOD FOR MANUFACTURING THE SAME
A solar cell module capable of preventing the occurrence of a PID failure in a solar photovoltaic power generation system with a MW capacity, said system being...
2018/0013023 SHADE MANAGEMENT OF SOLAR CELLS AND SOLAR CELL REGIONS
A photovoltaic solar structure comprises at least two electrically connected solar cell regions forming a shade management block. The solar cell regions have a...
2018/0013021 SOLAR CELL
A solar cell includes: a semiconductor substrate formed of n-type crystalline silicon; a first stack formed of amorphous silicon in a first region on a first...
2018/0013020 METAL CHALCOGENIDE DEVICE AND PRODUCTION METHOD THEREFOR
The present invention relates to a chalcogenide device and particularly to a metal chalcogenide device using transition metal chalcogenides as electrodes and a...
2018/0013019 SOLAR CELL MODULE AND METHOD FOR MANUFACTURING THE SAME
A method for manufacturing a solar cell module, the method includes a cell forming operation for forming a first solar cell and a second solar cell by, for...
2018/0013018 SOLAR CELL
A solar cell includes a semiconductor substrate, a bus-bar electrode, a plurality of finger electrodes, and a heavily doped layer. The semiconductor substrate...
2018/0013015 SCHOTTKY BARRIER DIODE AND A METHOD OF MANUFACTURING THE SAME
A Schottky metal is in Schottky-contact with a center portion of a surface of an epitaxial layer. A peripheral trench is formed by digging from the surface of...
2018/0013014 SCHOTTKY BARRIER DIODE AND METHOD OF MANUFACTURING THE SAME
A Schottky barrier diode according to an exemplary embodiment of the present disclosure includes: an n- type layer disposed on a first surface of an n+ type...
2018/0013011 Semiconductor Device
It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film)...
2018/0013009 INTEGRATION OF AIR-SENSITIVE TWO-DIMENSIONAL MATERIALS ON ARBITRARY SUBSTRATES FOR THE MANUFACTURING OF...
A field-effect transistor and method for fabricating such a field-effect transistor that utilizes an air-sensitive two-dimensional material (e.g., silicene). A...
2018/0013008 THIN FILM TRANSISTOR, A THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME, AND A METHOD OF MANUFACTURING THE SAME
A thin film transistor includes a semiconductor layer, a gate electrode, and an insulating layer. The semiconductor layer includes a source electrode, a drain...
2018/0013007 DISPLAY DEVICE
The purpose of the invention is suppressing a kink phenomenon and improvoning the image quality of a display device. The display device has a TFT in a pixel....
2018/0013006 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
According to one embodiment, a semiconductor device includes contact holes passing through a source region of a drain region of an interlayer insulating film...
2018/0013005 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
After a sputtering gas is supplied to a deposition chamber, plasma including an ion of the sputtering gas is generated in the vicinity of a target. The ion of...
2018/0013004 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A...
2018/0013000 APPARATUS AND METHODS OF FORMING FIN STRUCTURES WITH ASYMMETRIC PROFILE
An embodiment includes a microelectronic device comprising: a substrate comprising a raised portion and a non-raised portion, wherein a dielectric material is...
2018/0012999 SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
A semiconductor device includes a via and first and second transistors of the same channel type which are formed in a semiconductor substrate. The first and...
2018/0012998 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
A semiconductor device includes: a sidewall insulating film; a gate electrode; source and drain regions; a first stress film; and a second stress film.
2018/0012996 RECONFIGURABLE NANOWIRE FIELD EFFECT TRANSISTOR, A NANOWIRE ARRAY AND AN INTEGRATED CIRCUIT THEREOF
A reconfigurable field effect transistor (RFET) includes a nanowire, wherein the nanowire comprises two Schottky contacts, as well as two gate contacts...
2018/0012995 SEMICONDUCTOR DEVICES AND METHOD OF MAKING THE SAME
In one embodiment, the semiconductor devices relate to using one or more super-junction trenches for termination.
2018/0012991 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device includes: an n- type layer disposed on a first surface of an n+ type silicon carbide substrate; a first trench and a second trench...
2018/0012988 DUAL STRESS DEVICE AND METHOD
A semiconductor device including semiconductor material having a bend and a trench feature formed at the bend, and a gate structure at least partially disposed...
2018/0012987 SEMICONDUCTOR DEVICE HAVING SUPER JUNCTION METAL OXIDE SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD FOR THE SAME
A semiconductor device includes: a first base layer; a drain layer disposed on the back side surface of the first base layer; a second base layer formed on the...
2018/0012986 SEMICONDUCTOR DEVICE WITH VERTICALLY INTEGRATED PHEMTS
The present disclosure relates to a semiconductor device with vertically integrated pseudomorphic high electron mobility transistors (pHEMTs). The disclosed...
2018/0012982 SEMICONDUCTOR DEVICE
A semiconductor device includes a semiconductor layer having a first principal surface on one side thereof and a second principal surface on the other side...
2018/0012981 SURFACE DEVICES WITHIN A VERTICAL POWER DEVICE
A semiconductor device comprises a vertical power device, such as a superjunction MOSFET, an IGBT, a diode, and the like, and a surface device that comprises...
2018/0012980 LATERAL INSULATED GATE BIPOLAR TRANSISTOR
A lateral insulated gate bipolar transistor, comprising: a substrate (100), having a first conductivity type; an insulating layer (200), formed on the...
2018/0012979 HETEROJUNCTION BIPOLAR TRANSISTOR
A heterojunction bipolar transistor includes a collector layer, a base layer, an emitter layer, and a semiconductor layer that are laminated in this order,...
2018/0012977 Isolation Structure of Fin Field Effect Transistor
A representative fin field effect transistor (FinFET) includes a substrate having a major surface; a fin structure protruding from the major surface having a...
2018/0012976 SEMICONDUCTOR STRUCTURE
A method for making a semiconductor device. A substrate having a fin structure is provided. A continuous dummy gate line is formed on the substrate. The dummy...
2018/0012973 DIFFERENTIAL SG/EG SPACER INTEGRATION WITH EQUIVALENT NFET/PFET SPACER WIDTHS & DUAL RAISED SOURCE DRAIN...
A method of forming matched PFET/NFET spacers with differential widths for SG and EG structures and a method of forming differential width nitride spacers for...
2018/0012971 PLANAR FIELD EFFECT TRANSISTOR
A fin-shaped field effect transistor includes a substrate and a gate. The substrate includes an active area, where the active area includes a fin structure...
2018/0012970 SEMICONDUCTOR DEVICES
The semiconductor device including a device isolation layer disposed in a substrate and defining an active region, a first conductive pattern on the active...
2018/0012969 FABRICATION OF A VERTICAL FIN FIELD EFFECT TRANSISTOR WITH A REDUCED CONTACT RESISTANCE
A method of forming a vertical fin field effect transistor (vertical finFET) with an increased surface area between a source/drain contact and a doped region,...
2018/0012968 THIN FILM TRANSISTOR SUBSTRATES, METHODS OF MANUFACTURING THE SAME AND DISPLAY DEVICES INCLUDING THE SAME
A thin film transistor substrate includes a data line, a gate line, a gate electrode, a source electrode, a first drain electrode, a semiconductor layer and a...
2018/0012967 SEMICONDUCTOR DEVICES
A semiconductor device may include an active fin, an element isolation film on a lower portion of the active fin and a gate structure crossing over the active...
2018/0012964 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Provided is a manufacturing method of a semiconductor device including a vertical MOSFET having a planar gate. The manufacturing method of a semiconductor...
2018/0012962 Field-Effect Transistors Having Contacts To 2D Material Active Region
Exemplary FET devices having 2D material layer active regions and methods of fabricating thereof are described. For example, a black phosphorus active region...
2018/0012957 SILICON CARBIDE SEMICONDUCTOR DEVICE
A silicon carbide semiconductor device has a silicon carbide substrate and an insulating film. The silicon carbide substrate includes a termination region...
2018/0012955 CAPACITOR STRUCTURES, DECOUPLING STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME
Decoupling structures are provided. The decoupling structures may include first conductive patterns, second conductive patterns and a unitary supporting...
2018/0012953 HIGH RESISTIVITY IRON-BASED, THERMALLY STABLE MAGNETIC MATERIAL FOR ON-CHIP INTEGRATED INDUCTORS
An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated...
2018/0012952 SEMICONDUCTOR DEVICE HAVING INDUCTOR
A semiconductor device includes first and second winding portions disposed in a first level of an insulating layer and surrounding a center region thereof....
2018/0012951 DISPLAY DEVICE
A selection transistor and a light-emitting transistor are formed in a pixel. The selection transistor includes a gate electrode connected to a scan line, a...
2018/0012948 ARRAY SUBSTRATE STRUCTURE AND DISPLAY DEVICE
An array substrate structure is provided, which includes a substrate with a first surface and a second surface opposite to the first surface. A first TFT is on...
2018/0012945 DISPLAY DEVICE
To provide a display device including a pixel electrode formed on an insulating surface; a bank covering an end portion of the pixel electrode and having an...
2018/0012943 DISPLAY DEVICE
A display device with high resolution is provided. A thin display device is provided. A highly reliable display device is provided. The display device includes...
2018/0012942 DISPLAY DEVICE
A plurality of pixels P and a plurality of light-transmitting regions L are alternately disposed such that a light-transmitting region M1 is disposed between...
2018/0012940 ORGANIC LIGHT-EMITTING DISPLAY DEVICE
An organic light-emitting display device with improved light efficiency includes a plurality of pixel electrodes each corresponding one of at least a first,...
2018/0012939 FLEXIBLE DISPLAY DEVICE
A flexible display device includes a flexible substrate, an inorganic barrier layer, a metal layer, an organic buffer layer, and an insulating layer. The...
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