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Patent # | Description |
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2018/0026000 |
Integrated Passive Device for RF Power Amplifier Package The present disclosure relates to a radio frequency (RF) power transistor package. It further relates to a mobile telecommunications base station comprising... |
2018/0025999 |
INFO PACKAGE WITH INTEGRATED ANTENNAS OR INDUCTORS In some embodiments, a semiconductor package includes a die surrounded by a molding material, a redistribution layer over the die and the molding material, the... |
2018/0025998 |
SEMICONDUCTOR DEVICE A semiconductor device with enhanced performance. The semiconductor device has a high speed transmission path which includes a first coupling part to couple a... |
2018/0025997 |
SEMICONDCUTOR STRUCTURE AND SEMICONDUCTOR MANUFACTURING PROCESS THEREOF A semiconductor structure has an integrated circuit component, a conductive contact pad, a seal ring structure, a conductive via, a ring barrier, and a mold... |
2018/0025996 |
PROTECTED INTEGRATED CIRCUIT The integrated circuit includes a functional block performing a logic and/or analog function. A control circuit is configured to transmit at least a first... |
2018/0025995 |
REDUCING WAFER WARPAGE DURING WAFER PROCESSING According to one embodiment, there is provided a manufacturing method of a semiconductor device. The method includes forming a first guard ring around a first... |
2018/0025994 |
SURFACE MOUNT PACKAGE AND MANUFACTURING METHOD THEREOF An object of the present invention is to provide a surface-mount type package for semiconductor chips which is resistant to failures caused by thermal stress.... |
2018/0025993 |
SEMICONDUCTOR DEVICE According to the present invention, a semiconductor device includes a heat spreader, a semiconductor chip fixed to a mounting surface of the heat spreader via... |
2018/0025992 |
SEMICONDUCTOR PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF A semiconductor package structure includes a redistribution layer (RDL), a chip, a plurality of interconnecting bumps and an encapsulant. The redistribution... |
2018/0025991 |
SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME To provide a technique capable of positioning of a semiconductor chip and a mounting substrate with high precision by improving visibility of an alignment... |
2018/0025990 |
PREVENTION OF PREMATURE BREAKDOWN OF INTERLINE POROUS DIELECTRICS IN AN
INTEGRATED CIRCUIT A non-porous dielectric barrier is provided between a porous portion of a dielectric region and an electrically conductive element of an interconnect portion... |
2018/0025989 |
FORMATION OF LINER AND METAL CONDUCTOR An integrated circuit device includes a substrate including a dielectric layer patterned with a set of conductive line trenches, each conductive line trench... |
2018/0025988 |
SIMULTANEOUS FORMATION OF LINER AND METAL CONDUCTOR An advanced metal conductor structure and a method for constructing the structure are described. A method for fabricating an advanced metal conductor structure... |
2018/0025987 |
Wafer-Level Packaged Components and Methods Therefor Wafer-level packaged components are disclosed. In a wafer-level-packaged, an integrated circuit die has first contacts in an inner third region of a surface of... |
2018/0025986 |
INTEGRATED FAN-OUT PACKAGE A semiconductor device including an integrated circuit, a protection layer, and a conductive via is provided. The integrated circuit includes at least one... |
2018/0025985 |
FAN-OUT PACKAGE STRUCTURE A semiconductor package structure including a redistribution layer (RDL) structure having a first surface and a second surface opposite thereto is provided.... |
2018/0025984 |
SEMICONDUCTOR DEVICE HAVING STRUCTURE FOR IMPROVING VOLTAGE DROP AND
DEVICE INCLUDING THE SAME A semiconductor device includes a semiconductor substrate and a plurality of metal layers above the semiconductor substrate. A first of the metal layers... |
2018/0025983 |
DESIGNABLE CHANNEL FINFET FUSE On-chip, doped semiconductor fuse regions compatible with FinFET CMOS fabrication are formed from the channel regions of selected fins. One or more fin... |
2018/0025982 |
SEMICONDUCTOR DEVICE AND METHOD OF FORMING VERTICAL ONE-TIME-PROGRAMMABLE
FUSE A vertical OTP fuse formed in a semiconductor device has a substrate and an insulating layer formed over the substrate with an opening through the insulating... |
2018/0025981 |
METHOD FOR PROVIDING ELECTRICAL ANTIFUSE INCLUDING PHASE CHANGE MATERIAL An antifuse structure including a first electrode that is present in at a base of the opening in the dielectric material. The antifuse structure further... |
2018/0025980 |
ELECTRICAL ANTIFUSE HAVING AIRGAP OR SOLID CORE An antifuse structure including an opening through a dielectric material to a contact surface and an antifuse material layer present within the opening. The... |
2018/0025979 |
ELECTRICAL ANTIFUSE An antifuse structure including a first electrode that is present in at a base of the opening in the dielectric material. The antifuse structure further... |
2018/0025978 |
METHOD OF MAKING ELECTRICAL ANTIFUSE An antifuse structure including a first electrode that is present in at a base of the opening in the dielectric material. The antifuse structure further... |
2018/0025977 |
ELECTRICAL ANTIFUSE HAVING AIRGAP OR SOLID CORE An antifuse structure including an opening through a dielectric material to a contact surface and an antifuse material layer present within the opening. The... |
2018/0025976 |
METHOD FOR PROVIDING ELECTRICAL ANTIFUSE INCLUDING PHASE CHANGE MATERIAL An antifuse structure including a first electrode that is present in at a base of the opening in the dielectric material. The antifuse structure further... |
2018/0025975 |
INTERCONNECTION STRUCTURE AND METHOD OF FORMING THE SAME An interconnection structure includes a non-insulator structure, a liner layer, a dielectric structure and a conductive structure. The liner layer is present... |
2018/0025974 |
INTEGRATING METAL-INSULATOR-METAL CAPACITORS WITH AIR GAP PROCESS FLOW Semiconductor devices are provided which have MIM (metal-insulator-metal) capacitor structures that are integrated within air gaps of on-chip interconnect... |
2018/0025973 |
CHIP The present embodiments provides a chip, including a carrier, a redistribution structure, and multiple packaging function modules, where the multiple packaging... |
2018/0025972 |
POWER LINE LAYOUT STRUCTURE FOR SEMICONDUCTOR DEVICE A power line layout structure of the semiconductor device may include first through fifth power lines. The first and second power lines may be located at a... |
2018/0025971 |
SIMULTANEOUS FORMATION OF LINER AND METAL CONDUCTOR An integrated circuit device having a substrate including a dielectric layer is patterned with a set of conductive line trenches. Each conductive line trench... |
2018/0025970 |
INTEGRATED CIRCUIT (IC) STRUCTURE FOR HIGH PERFORMANCE AND FUNCTIONAL
DENSITY An integrated circuit (IC) provides high performance and high functional density. A first back-end-of-line (BEOL) interconnect structure and a second BEOL... |
2018/0025969 |
METAL CAP INTEGRATION BY LOCAL ALLOYING A middle-of-line interconnect structure including copper interconnects and integral copper alloy caps provides effective electromigration resistance. A metal... |
2018/0025968 |
SEMICONDUCTOR DEVICE HAVING NON-ORTHOGONAL ELEMENT The present disclosure provides a device includes a first gate structure segment and a collinear second gate structure segment, as well as a third gate... |
2018/0025967 |
FLIP-CHIP, FACE-UP AND FACE-DOWN CENTERBOND MEMORY WIREBOND ASSEMBLIES A microelectronic assembly can include a substrate having first and second surfaces and an aperture extending therebetween, the substrate having terminals. The... |
2018/0025966 |
INTEGRATED FAN-OUT PACKAGE AND METHOD OF FABRICATING THE SAME Provided is an integrated fan-out package including a die, a first redistribution circuit structure, a second redistribution circuit structure, a plurality of... |
2018/0025965 |
WFCQFN (Very-Very Thin Flip Chip Quad Flat No Lead) with Embedded
Component on Leadframe and Method Therefor A quad flat no lead package is provided comprising at least one first integrated circuit die embedded in a recess in a die paddle of a metal leadframe and a... |
2018/0025964 |
FLUID-FILLED MICROCHANNELS A device comprises a first layer of a die. The first layer comprises a microchannel. The microchannel is partially filled with a liquid and partially filled... |
2018/0025963 |
METHOD, SYSTEM, AND ELECTRONIC ASSEMBLY FOR THERMAL MANAGEMENT There are provided methods, systems, and electronic assemblies for efficient thermal management in electronics applications. For example, there is provided an... |
2018/0025962 |
Power Electronics Assemblies Having a Semiconductor Device with Metallized
Embedded Cooling Channels A power electronics assembly having a semiconductor device that includes a first device surface opposite a second device surface, a semiconductor substrate... |
2018/0025961 |
Power Conversion Device Including Semiconductor Module Provided with
Laminated Structure A power conversion device includes a semiconductor module with switching elements incorporated therein, a plurality of components electrically connected to the... |
2018/0025960 |
CIRCUIT PACKAGE A circuit package panel containing a packaging of epoxy mold compounds and a circuit device in the packaging, wherein the packaging comprises, at least one... |
2018/0025959 |
Integrated Circuit Packages and Methods for Forming the Same A method includes forming an electrical connector over a substrate of a wafer, and molding a polymer layer, with at least a portion of the electrical connector... |
2018/0025958 |
BASE-ATTACHED ENCAPSULANT FOR SEMICONDUCTOR ENCAPSULATION, SEMICONDUCTOR
APPARATUS, AND METHOD FOR... A base-attached encapsulant for semiconductor encapsulation is used for collectively encapsulating a device-mounted surface of the semiconductor device-mounted... |
2018/0025957 |
POLYPHENYLENE SULFIDE RESIN COMPOSITION, MOLDED PRODUCT FORMED THEREFROM
AND METHOD OF PRODUCING SEMICONDUCTOR... A polyphenylene sulfide resin composition includes 5-50% by weight of (A) a polyphenylene sulfide resin having a weight-average molecular weight of not less... |
2018/0025956 |
MANUFACTURING METHOD OF PACKAGE CARRIER A manufacturing method of a package carrier is provided. A substrate having a through hole is provided, wherein a profile of the through hole from top view is... |
2018/0025955 |
SEMICONDUCTOR DEVICE AND METHOD Disclosed herein is a method for forming a semiconductor package. The method includes providing a first releasable chip carrier attached to a conductive layer.... |
2018/0025954 |
TOP CONTACT RESISTANCE MEASUREMENT IN VERTICAL FETS A test device includes a diode junction layer having a first dopant conductivity region and a second dopant conductivity region formed within the diode... |
2018/0025953 |
INSPECTING METHOD FOR INSPECTING INFLUENCE OF INSTALLATION ENVIRONMENT
UPON PROCESSING APPARATUS A method for inspecting the influence of an installation environment upon a processing apparatus includes setting a mark for specifying a relative positional... |
2018/0025952 |
Reverse Decoration for Defect Detection Amplification Reverse decoration can be used to detect defects in a device. The wafer can include NAND stacks or other devices. The defect can be a channel bridge, a void,... |
2018/0025951 |
INFORMATION PROCESSING DEVICE, PROCESSING DEVICE, PREDICTION METHOD,
PROGRAM, AND PROCESSING METHOD Efficiency of prediction of a physical quantity increases in repeated simulation of an etching process with a change of parameters. An information processing... |