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Patent # Description
2019/0074390 SOLAR CELL MODULE
A solar cell module includes an upper substrate, a lower substrate opposite the upper substrate, a solar cell panel positioned between the upper substrate and...
2019/0074389 CONTROL OF SURFACE PROPERTIES BY DEPOSITION OF PARTICLE MONOLAYERS
The physical and chemical properties of surfaces can be controlled by bonding nanoparticles, microspheres, or nanotextures to the surface via inorganic...
2019/0074388 PHOTODETECTOR CONVERTING ULTRAVIOLET LIGHT INTO VISIBLE LIGHT
A photodetector includes a structure that converts ultraviolet light into visible light; and a photodetection element that detects the visible light...
2019/0074387 PHOTOVOLTAIC ARRAY KIT AND METHOD OF INSTALLATION
The present disclosure is generally related to a solar array kit for installation on a support structure, such as a roof. The kit includes photovoltaic panels...
2019/0074386 SEMICONDUCTOR DEVICE
A semiconductor device includes an n-type drift layer formed on a semiconductor substrate having an off-angle, plurality of p-type pillar regions formed in the...
2019/0074385 MERGED P-INTRINSIC-N (PIN) SCHOTTKY DIODE
In a general aspect, a device can include a substrate, a first pillar of a first conductivity type, a second pillar of a second conductivity type, the first...
2019/0074384 THIN FILM TRANSISTOR, MANUFACTURING PROCESS FOR THIN FILM TRANSISTOR, AND LASER ANNEALING APPARATUS
The present invention provides a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, which are...
2019/0074383 THIN FILM TRANSISTOR STRUCTURE AND DRIVING CIRCUIT OF AMOLED
A thin film transistor structure is provided with a glass substrate, a buffer layer, a metal oxide semiconductor layer, and a gate metal layer. A shielding...
2019/0074382 SEMICONDUCTOR DEVICE
A semiconductor device comprising a first transistor, a second insulating film, a conductive film, and a capacitor is provided. The first transistor comprises...
2019/0074381 DEVICE COMPRISING 2D MATERIAL
A device including a two-dimensional (2D) material includes a substrate including a recess recessed from a main surface of the substrate and extending in a...
2019/0074380 DEVICE COMPRISING 2D MATERIAL
A device includes a substrate, a first electrode on the substrate, an insulating pattern on the substrate, a second electrode on an upper end of the insulating...
2019/0074379 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal...
2019/0074378 SEMICONDUCTOR DEVICE
A transistor includes oxide semiconductor stacked layers between a first gate electrode layer and a second gate electrode layer through an insulating layer...
2019/0074377 THIN FILM TRANSISTOR AND DISPLAY DEVICE INCLUDING THE SAME
A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a...
2019/0074376 THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS INCLUDING THE THIN FILM TRANSISTOR
A thin film transistor (TFT), a method of manufacturing the TFT, and a display apparatus including the TFT, the TFT including a substrate; a semiconductor...
2019/0074375 Lateral MOSFET
A method includes forming a first isolation region in a substrate, wherein a top surface of the first isolation region is lower than a top surface of the...
2019/0074374 Circuit Including a Field-Effect Transistor and a Bipolar Transistor
A circuit can include a field-effect transistor having a body, a drain, a gate, and a source. In an embodiment, the circuit can further include a bipolar...
2019/0074373 SEMICONDUCTOR DEVICE
In an n-type current diffusion region, a first p.sup.30-type region underlying a bottom of a trench (gate trench) is provided. In the n-type current diffusion...
2019/0074372 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
In an n-type current diffusion region, a first p.sup.+-type region is provided under a bottom of a trench (gate trench). Further, in the n-type current...
2019/0074371 3D SEMICONDUCTOR DEVICE AND STRUCTURE
A 3D semiconductor device, the device including: a first layer including first transistors each including a first silicon channel; a second layer including...
2019/0074370 SEMICONDUCTOR DEVICE PRIMARILY MADE OF NITRIDE SEMICONDUCTOR MATERIALS AND PROCESS OF FORMING THE SAME
A semiconductor device made of primarily nitride semiconductor materials is disclosed. The semiconductor device includes a substrate; a semiconductor stack on...
2019/0074369 NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE
There is provided a nitride semiconductor epitaxial substrate having a spacer structure capable of obtaining characteristics unprecedented in the prior art. In...
2019/0074367 SEMICONDUCTOR DEVICE
A semiconductor device includes a semiconductor substrate, an emitter region, a base region and multiple accumulation areas, and an upper accumulation area in...
2019/0074366 SEMICONDUCTOR DEVICE WITH MULTIPLE HBTS HAVING DIFFERENT EMITTER BALLAST RESISTANCES
The present disclosure relates to a semiconductor device with multiple heterojunction bipolar transistors (HBTs) that have different emitter ballast...
2019/0074365 Integrated Epitaxial Metal Electrodes
Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are...
2019/0074364 SEMICONDUCTOR DEVICE WITH AIRGAP SPACER FOR TRANSISTOR AND RELATED METHOD
A method may include forming a transistor on a substrate, the transistor including a gate, and forming a sacrificial spacer extending along an entirety of a...
2019/0074363 SEMICONDUCTOR MEMORY DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME
A semiconductor memory device that may include a substrate, an array of memory cells arranged in rows and columns, bit lines and word lines. The memory cells...
2019/0074362 Semiconductor devices including recessed source/drain silicides and methods of forming the same
A gate all around field effect transistor (GAAFET) device may include a plurality of nanostructures that are spaced apart from one another in a channel region...
2019/0074361 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is...
2019/0074360 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A silicon carbide semiconductor device includes a silicon carbide substrate and a gate insulating film. The silicon carbide substrate includes a first impurity...
2019/0074359 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR DEVICE
A silicon carbide semiconductor device includes a first semiconductor layer of a first conductivity type provided on a front surface of a semiconductor...
2019/0074358 Semiconductor Device Comprising Diamond and Method For Its Manufacturing
Hot metal dissolution of carbon atoms is used to structure a diamond substrate. A layer of catalytic material is deposited on at least a portion of a surface...
2019/0074357 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a first gradient layer, two source/drain structures, a...
2019/0074356 InGaAlP Schottky Field Effect Transistor with AlGaAs Carrier Supply Layer
An InGaAlP Schottky field effect transistor with AlGaAs carrier supply layer comprises a buffer layer, a channel layer, a carrier supply layer, a Schottky...
2019/0074355 ELONGATED SEMICONDUCTOR STRUCTURE PLANARIZATION
According to one example, a method includes epitaxially growing first portions of a plurality of elongated semiconductor structures on a semiconductor...
2019/0074354 PREPARATION OF NANOCRYSTALS WITH MIXTURES OF ORGANIC LIGANDS
Semiconductor nanocrystals prepared using a mixture of organic ligands (e.g., oxoacids), as well as compositions, kits, and methods of using such semiconductor...
2019/0074353 SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD FOR SAME
The present disclosure relates to the field of semiconductor technologies, and discloses semiconductor apparatus and manufacturing methods for the same. In...
2019/0074352 Method for Producing a Semiconductor Body Having a Recombination Zone, Semiconductor Component Having a...
A first part of a semiconductor body is provided. Impurities are introduced into the first part of the semiconductor body, The impurities act as recombination...
2019/0074351 METHODS OF FABRICATING A SEMICONDUCTOR STRUCTURE INCLUDING CAPACITOR STRUCTURES
A semiconductor structure and a method of fabricating thereof are provided. The semiconductor structure includes a substrate and a capacitor structure. The...
2019/0074350 HIGH VOLTAGE GALVANIC ISOLATION DEVICE
A microelectronic device contains a high voltage component having a high voltage node and a low voltage node. The high voltage node is isolated from the low...
2019/0074349 LOW WARPAGE HIGH DENSITY TRENCH CAPACITOR
A capacitor structure and method of forming the capacitor structure is provided, including a providing a doped region of a substrate having a two-dimensional...
2019/0074348 CAPACITOR
A capacitor that includes a substrate; a lower electrode formed on the substrate, and including an upper surface, a lower surface and an end surface that...
2019/0074347 WAFER LEVEL PACKAGE AND CAPACITOR
A wafer level package which includes an IC chip; a rewiring layer on the IC chip; and a capacitor embedded in the rewiring layer.
2019/0074346 DISPLAY APPARATUS AND METHOD OF MANUFACTURING DISPLAY APPARATUS
A display apparatus includes a substrate including a display area, a peripheral area surrounding the display area, a function-adding area, of which at least a...
2019/0074345 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
A display device and a method of manufacturing the same are disclosed. In one aspect, the display device includes a substrate including a separation area and a...
2019/0074344 ORGANIC LIGHT-EMITTING DISPLAY DEVICE
An organic light-emitting display device includes: a substrate on which a display area and a non-display area surrounding the display area are defined, the...
2019/0074343 FMM PROCESS FOR HIGH RES FMM
Aspects disclosed herein relate to apparatus having a combined common metal mask (CMM) and fine metal mask (FMM) used in the manufacture of organic light...
2019/0074342 DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
There is provided a display device including: a light emitting element; and a drive transistor (DRTr) that includes a coupling section (W1) and a plurality of...
2019/0074341 OLED Display Device and Pixel Driving Circuit Thereof
A pixel driving circuit using 4T1C pixel structure applied in an OLED display device is provided. The OLED display device senses a threshold voltage imposed on...
2019/0074340 OLED Display Device and Pixel Driving Circuit Thereof
A pixel driving circuit using 4T2C pixel structure applied in an OLED display device is provided. The OLED display device senses a threshold voltage imposed on...
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