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Patent # Description
2019/0097099 LIGHT-EMITTING DIODE, BACKLIGHT MODULE, AND LIQUID CRYSTAL DISPLAY DEVICE
The present disclosure relates to a light-emitting diode (LED), including: a grating layer; and a light reflecting layer, wherein a light-emitting component is...
2019/0097098 LIGHT-EMITTING DEVICE
A light-emitting device is provided. The light-emitting device includes a light-emitting element having a peak light-emitting wavelength in the range of 440 nm...
2019/0097097 BACKLIGHT APPARATUS
The invention discloses a backlight apparatus including a wavelength-converting device and a light source. The wavelength-converting device includes a...
2019/0097096 OPTOELECTRONIC COMPONENT, METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND FLASHLIGHT FOR A PORTABLE DEVICE
The invention relates to an optoelectronic component (100) comprising a semiconductor chip (1) for generating a primary beam in the blue spectral range, a...
2019/0097095 LIGHT SOURCE DEVICE AND LIGHTING DEVICE
A light source device includes a semiconductor light-emitting device which emits coherent excitation light, and a wavelength conversion element which is spaced...
2019/0097094 LIGHTING MODULE AND LIGHTING APPARATUS HAVING THEREOF
A lighting module according to an embodiment of the invention includes: a substrate; a plurality of light emitting devices disposed in N rows (N is an integer...
2019/0097093 LIGHT-EMITTING DEVICE
A light-emitting device includes a light-emitting element that emits light with a peak wavelength in a range of 380 nm to 460 nm, and a phosphor group that...
2019/0097092 LIGHTING DEVICE
A lighting device includes a laser light source that emits laser light, a wavelength converter that converts a wavelength of the laser light and emits...
2019/0097091 DISPLAY DEVICE AND LED EMITTING LIGHT ON FOUR SIDES THEREOF
The disclosure provides a display device and a LED emitting light on four sides thereof. The LED emitting light on four sides includes metallic substrates, a...
2019/0097090 UNIT SUBSTRATE FOR OPTICAL DEVICE AND OPTICAL DEVICE PACKAGE HAVING SAME
Disclosed is a unit substrate for an optical device, the unit substrate including: an optical device-mounting region provided on an upper surface of the unit...
2019/0097089 SEMICONDUCTOR LIGHT EMITTING APPARATUS AND ULTRAVIOLET LIGHT EMITTING MODULE
There is provided an apparatus including a semiconductor light emitting device formed on a surface of a substrate including a first electrode and a plurality...
2019/0097088 OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT
An optoelectronic device (50) comprising a semiconductor body (10a, 10b, 10c) having an optically active region (12), a carrier (60), and a pair of connection...
2019/0097087 OPTOELECTRONIC DEVICE WITH NON-CONTINUOUS BACK CONTACTS
An optoelectronic device is disclosed. The optoelectronic device comprises a semiconductor structure; a plurality of contacts on the front side of the...
2019/0097086 LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE
A light emitting element includes a semiconductor layered body, an insulating film, first and second electrodes, and first and second external connection...
2019/0097085 SEMICONDUCTOR LIGHT EMITTING DEVICE
The semiconductor layer has a first surface, a second surface provided on opposite side from the first surface, and a third surface provided on the opposite...
2019/0097084 LIGHT SOURCE MODULE
A light source module includes a substrate, a first covering layer, a second covering layer, a luminous layer and a supporting base. The luminous layer is...
2019/0097082 LIGHT SOURCE MODULE AND MANUFACTURING METHOD THEREOF
A manufacturing method of a light source module includes the following steps. Firstly, a light emitting diode die is installed on a supporting base. Then, an...
2019/0097081 METHOD FOR MANUFACTURING LIGHT-EMITTING MODULE
A method for manufacturing a light-emitting module includes: firstly, attaching a semiconductor structure on a first supporting substrate, the semiconductor...
2019/0097080 METHOD FOR PRODUCING LIGHT-EMITTING DEVICE
To remove the mask formed by nanoimprinting after dry etching. A mask is formed by nanoimprinting on a back surface of a substrate. Subsequently, dry etching...
2019/0097079 Photovoltaic Devices and Method of Making
Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack....
2019/0097078 Solar cell with doped polysilicon surface areas and method for manufacturing thereof
A method for manufacturing a front floating emitter type solar cell includes providing a silicon substrate of a first or second conductivity type with a front...
2019/0097077 BONDS FOR SOLAR CELL METALLIZATION
A solar cell can include a substrate and a semiconductor region disposed in or above the substrate. The solar cell can also include a conductive contact...
2019/0097076 MICROFLUIDIC SYSTEM AND METHOD FOR DRIVING THE SAME
A microfluidic system includes a liquid drop accommodation space, an array of photosensitivity detection circuits and an array of driving circuits between an...
2019/0097075 DEEP TRENCH ISOLATION (DTI) BOUNDED SINGLE PHOTON AVALANCHE DIODE (SPAD) ON A SILICON ON INSULATOR (SOI) SUBSTRATE
A semiconductor on insulator substrate includes a semiconductor support layer, a buried insulating layer over the semiconductor support layer and an epitaxial...
2019/0097074 PHOTOVOLTAIC CELL
A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may...
2019/0097073 SOLAR CELL AND SOLAR CELL PANEL INCLUDING THE SAME
A solar cell that includes: a semiconductor substrate that has a length in a first direction and a width in a second direction, the second direction being...
2019/0097072 PHOTOVOLTAIC ASSEMBLY
A photovoltaic assembly is provided, which includes a plurality of solar cells; a plurality of lead wires, the solar cells are connected in series through the...
2019/0097071 ENCAPSULANT MATERIAL FOR PHOTOVOLTAIC MODULES AND METHOD OF PREPARING THE SAME
An encapsulant material for a photovoltaic module. The encapsulant material includes: between 30 and 50 parts by weight of fiber cloth, and between 50 and 70...
2019/0097070 SHEET FOR SOLAR BATTERY MODULE, AND SOLAR BATTERY MODULE
A sheet for solar cell modules is provided with an infrared transmitting layer, and an infrared reflecting layer containing a polyester resin as a main...
2019/0097069 SOLAR CELL PANEL
A solar cell panel includes a solar cell; a sealing member for sealing the solar cell; a first cover member positioned at a first surface of the solar cell on...
2019/0097068 SOLAR CELLS HAVING DIFFERENTIATED P-TYPE AND N-TYPE ARCHITECTURES
Methods of fabricating solar cell emitter regions with differentiated P-type and N-type region architectures, and the resulting solar cells, are described...
2019/0097067 GALLIUM NITRIDE-BASED SENSOR HAVING HEATER STRUCTURE AND METHOD OF MANUFACTURING THE SAME
A gallium nitride-based sensor having a heater structure and a method of manufacturing the same are disclosed, the method including growing an n-type or p-type...
2019/0097066 THIN OPTOELECTRONIC MODULES WITH APERTURES AND THEIR MANUFACTURE
The wafer-level manufacturing method makes possible to manufacture ultrathin optical devices such as opto-electronic modules. A clear encapsulation is applied...
2019/0097065 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
The disclosure discloses a thin film transistor and a manufacturing method thereof. The method includes depositing quantum dot ink containing carbon quantum...
2019/0097064 VERTICAL THIN FILM TRANSISTOR
A semiconductor device includes a stack of layers stacked vertically and including a source layer, a drain layer and a channel layer between the source layer...
2019/0097063 ESL TFT SUBSTRATE AND FABRICATION METHOD THEREOF
An etch stop layer (ESL) thin-film transistor (TFT) substrate includes an active layer including a channel zone and two opposite side zones that are made...
2019/0097062 Area-Efficient Single-legged SOI MOSFET structure immune to single-event-effects and bipolar latch-up
New device structure for single-legged Silicon-On-Insulator Metal-Oxide-Semiconductor (SOI MOS) transistor is presented. This new structure imposes a hard...
2019/0097061 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
A method for manufacturing a semiconductor device comprises forming a first fin and a second fin on a first active region and a second active region of a...
2019/0097060 Compact Vertical Injection Punch through Floating Gate Analog Memory and a Manufacture Thereof
A vertical injection punchthrough based metal oxide semiconductor (VIPMOS) device and method of manufacturing the same, include a control gate, an erase gate,...
2019/0097059 SEMICONDUCTOR DEVICE
In a semiconductor device, at least one thin-film transistor includes a semiconductor layer, a gate electrode, a gate insulating layer, a source electrode, and...
2019/0097058 OXIDE THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE
Embodiments of the present application provide an Oxide TFT, a manufacturing method thereof, an array substrate and a display device. The Oxide TFT includes a...
2019/0097057 NON-LINEAR FIN-BASED DEVICES
An embodiment includes an apparatus comprising: a non-planar fin having first, second, and third portions each having major and minor axes and each being...
2019/0097056 SEMICONDUCTOR DEVICE HAVING FINS AND METHOD OF FABRICATING THE SAME
A device includes a semiconductor substrate, a first fin arranged over the semiconductor substrate, and an isolation structure. The first fin includes an upper...
2019/0097055 BEADED FIN TRANSISTOR
Techniques are disclosed for forming a beaded fin transistor. As will be apparent in light of this disclosure, a transistor including a beaded fin ...
2019/0097054 INTEGRATED CIRCUIT DEVICE
An integrated circuit device includes a base burying insulating film covering a lower side wall of a fin-type active region on a substrate, an isolation...
2019/0097053 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
A semiconductor structure includes a substrate, a first fin structure disposed over the substrate, a second fin structure disposed over the substrate, and an...
2019/0097052 Method of Removing an Etch Mask
An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form...
2019/0097051 FIN FIELD EFFECT TRANSISTOR (FinFET) DEVICE STRUCTURE WITH DOPED REGION IN SOURCE/DRAIN STRUCTURE AND METHOD...
A FinFET device structure is provided. The FinFET device structure includes a fin structure extended above a substrate and a gate structure formed over a...
2019/0097050 REDUCING SERIES RESISTANCE BETWEEN SOURCE AND/OR DRAIN REGIONS AND A CHANNEL REGION
A method for reducing series resistance for transistors includes forming a conductive gate over and insulated from a semiconductor substrate, forming source...
2019/0097049 REDUCING SERIES RESISTANCE BETWEEN SOURCE AND/OR DRAIN REGIONS AND A CHANNEL REGION
A method for reducing series resistance for transistors includes forming a conductive gate over and insulated from a semiconductor substrate, forming source...
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