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Patent # Description
2019/0103505 APPARATUS AND METHOD FOR ATTACHING LED CHIPS
An apparatus and a method for attaching LED chips are provided. The method includes steps of: winding a first wire and a second wire around each of holders;...
2019/0103504 SPAD IMAGE SENSOR AND ASSOCIATED FABRICATING METHOD
A single photon avalanche diode (SPAD) image sensor is disclosed. The SPAD image sensor includes: a substrate having a front surface and a back surface;...
2019/0103503 PHOTODETECTOR FOR DETECTING INCOMING INFRARED LIGHT
There is described a photodetector for detecting incoming infrared light. The photodetector generally has a substrate; an i-type semiconductor region extending...
2019/0103502 SEMICONDUCTOR LIGHT DETECTION DEVICE AND METHOD OF DETECTING LIGHT OF SPECIFIC WAVELENGTH
Provided is a semiconductor light detection device having a relatively high detection sensitivity to a light component of a specific wavelength. The...
2019/0103501 LIGHT-RECEIVING DEVICE, IMAGING UNIT, AND ELECTRONIC APPARATUS
A light-receiving device of an embodiment of the present disclosure includes, on a first principal surface of a semiconductor layer, a pixel region that...
2019/0103500 SOLAR CELL PANEL AND METHOD FOR MANUFACTURING THE SAME
Disclosed is a solar cell panel including a solar cell; a sealing member surrounding and sealing the solar cell; a moisture barrier layer positioned between...
2019/0103499 PHOTOVOLTAIC CONVERSION DEVICE, PHOTOVOLTAIC MODULE, AND SOLAR POWER GENERATION SYSTEM
A photovoltaic conversion device (10) includes a semiconductor substrate (1), a passivation film (3), n-type amorphous semiconductor strips, p-type amorphous...
2019/0103498 SEMICONDUCTOR DEVICE COMPRISING SCHOTTKY BARRIER DIODES
A semiconductor device includes a first N-type deep well region and a second N-type deep well region formed in a substrate, an N-type diffused well region...
2019/0103497 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE
To improve field-effect mobility and reliability of a transistor including an oxide semiconductor film. Provided is a semiconductor device including an oxide...
2019/0103496 2-D Material Transistor with Vertical Structure
Semiconductor structures including two-dimensional (2-D) materials and methods of manufacture thereof are described. By implementing 2-D materials in...
2019/0103495 METHOD FOR MANUFACTURING POLYSILICON LAYER AND THIN FILM TRANSISTOR INCLUDING THE POLYSILICON LAYER
A manufacturing method of a polysilicon layer of a thin film transistor of a display device, includes: irradiating a first excimer laser beam having a first...
2019/0103494 THIN FILM TRANSISTOR
A thin film transistor includes a channel section formed from semiconductor material, a source electrode connected to one end of the channel section, a drain...
2019/0103493 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes a memory circuit and a logic circuit. The memory circuit includes a word line, a bit line, a common line and a memory...
2019/0103492 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE INVOLVING FORMING EPITAXIAL MATERIAL
A method for forming epitaxial material on base material includes forming a stress cap layer on a base layer of a first semiconductor material. Then, a stress...
2019/0103491 Semiconductor Device and Method
In accordance with some embodiments, a method is provided. The method includes: forming a semiconductor fin protruding from a substrate; depositing a spacer...
2019/0103490 DUAL GATE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
A dual-gate metal-oxide-semiconductor field-effect transistor (MOSFET) may include a MOSFET having a channel region, a drain, and a source, a first gate formed...
2019/0103489 TRENCH POWER SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURING THE SAME
The present disclosure provides a trench power semiconductor component and a method of manufacturing the same. The trench gate structure of the trench power...
2019/0103488 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
A semiconductor device includes a first dielectric layer on a substrate, a hard mask layer on the first dielectric layer, a trench in the hard mask layer and...
2019/0103487 FinFET Device and Method of Forming Same
A method includes forming a fin over a substrate, forming a dummy gate structure over the fin, forming a first spacer over the dummy gate structure, implanting...
2019/0103486 GERMANIUM TRANSISTOR STRUCTURE WITH UNDERLAP TIP TO REDUCE GATE INDUCED BARRIER LOWERING/SHORT CHANNEL EFFECT...
An apparatus including a transistor device including a channel disposed on a substrate between a source and a drain, a gate electrode disposed on the channel,...
2019/0103485 DEVICE AND METHOD OF DIELECTRIC LAYER
A method includes etching a semiconductor substrate to form a trench extending from a top surface of the semiconductor substrate into the semiconductor...
2019/0103484 BIDIRECTIONAL POWER MOSFET STRUCTURE WITH A CATHODE SHORT STRUCTURE
A field effect device includes a semiconductor body separating a source and a drain, both source and drain coupled to the semiconductor body. An insulated...
2019/0103483 SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SAME
Provided is a semiconductor device including a substrate in which an insulation layer is disposed between a first semiconductor layer and a second...
2019/0103482 SEMICONDUCTOR POWER DEVICE
A semiconductor power device includes a substrate, a buffer structure formed on the substrate, a barrier structure formed on the buffer structure, a channel...
2019/0103481 GROWTH OF CUBIC CRYSTALLINE PHASE STRUCTURE ON SILICON SUBSTRATES AND DEVICES COMPRISING THE CUBIC CRYSTALLINE...
A transistor comprises a substrate comprising a Group III/V compound semiconductor material having a cubic crystalline phase structure positioned on a...
2019/0103480 Semiconductor Device Having an Active Trench and a Body Trench
A semiconductor device includes: a drift region formed in a semiconductor substrate; a body region above the drift region; an active gate trench extending from...
2019/0103479 SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME
A semiconductor apparatus includes a semiconductor substrate including a semiconductor device. The semiconductor device includes a first n-type buffer layer, a...
2019/0103478 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided....
2019/0103477 FinFet Device and Method of Forming the Same
A FinFET device and a method of forming the same are provided. A method includes forming a fin extending above an isolation region. A sacrificial gate is...
2019/0103476 Gap-Filling Germanium Through Selective Bottom-Up Growth
A method includes depositing a silicon layer on a plurality of strips. The silicon layer is etched back to remove top portions of the silicon layer, and to...
2019/0103475 SPACER STRUCTURE WITH HIGH PLASMA RESISTANCE FOR SEMICONDUCTOR DEVICES
Semiconductor device structures comprising a spacer feature having multiple spacer layers are provided. In one example, a semiconductor device includes an...
2019/0103474 SIDEWALL ENGINEERING FOR ENHANCED DEVICE PERFORMANCE IN ADVANCED DEVICES
A method of sidewall engineering with negative capacitance materials is disclosed. For example, the negative capacitance material is a ferroelectric material....
2019/0103473 Contact Plugs and Methods Forming Same
A method includes forming a transistor, which includes forming a dummy gate stack over a semiconductor region, and forming an Inter-Layer Dielectric (ILD). The...
2019/0103472 Gate Stacks for Stack-Fin Channel I/O Devices and Nanowire Channel Core Devices
A semiconductor device includes a substrate; an I/O device over the substrate; and a core device over the substrate. The I/O device includes a first gate...
2019/0103471 LDMOS WITH HIGH-K DRAIN STI DIELECTRIC
A laterally diffused metal oxide silicon (LDMOS) transistor and a method of making the LDMOS transistor are disclosed. The LDMOS transistor includes a drain...
2019/0103470 METHOD OF MANUFACTURING A SPLIT-GATE FLASH MEMORY CELL WITH ERASE GATE
A method of forming a memory device with memory cells in a memory area, and logic devices in first and second peripheral areas. The memory cells each include a...
2019/0103469 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device having a composite barrier structure over a transistor and a method for manufacturing the same is disclosed. The method includes a...
2019/0103468 HIGH ELECTRON MOBILITY TRANSISTOR DEVICES AND METHOD FOR FABRICATING THE SAME
A HEMT device is provided. The HEMT device includes a substrate, a buffer layer, a first epitaxial layer, a second epitaxial layer, an insulating layer, a...
2019/0103467 SURROUND GATE VERTICAL FIELD EFFECT TRANSISTORS INCLUDING TUBULAR AND STRIP ELECTRODES AND METHOD OF MAKING THE...
A stack including doped semiconductor strips, a one-dimensional array of gate electrode strips, and a dielectric matrix layer is formed over a substrate. A...
2019/0103466 TRENCH GATE MANUFACTURING METHOD
A trench gate manufacturing method includes the following steps: Step 1, forming a trench in the surface of a semiconductor substrate; Step 2, forming a first...
2019/0103465 LAYERED STRUCTURE, SEMICONDUCTOR DEVICE INCLUDING LAYERED STRUCTURE, AND SEMICONDUCTOR SYSTEM INCLUDING...
In a first aspect of a present inventive subject matter, a layered structure includes a first semiconductor layer containing as a major component an...
2019/0103464 SEMICONDUCTOR DEVICE
A semiconductor device comprises: a nitride semiconductor layer; an oxide insulating film formed to contact the nitride semiconductor layer; and a gate...
2019/0103463 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device includes a bulk substrate, and an epitaxial layer formed on a surface of the bulk substrate. A part of the surface of the bulk substrate...
2019/0103462 SILICON CARBIDE SEMICONDUCTOR DEVICE
For example, a pin diode is constituted by a silicon carbide epitaxial substrate in which silicon carbide epitaxial layers constituting an n-type buffer...
2019/0103461 FinFET Structures and Methods of Forming the Same
FinFETs and methods of forming finFETs are described. According to some embodiments, a structure includes a channel region, first and second source/drain...
2019/0103460 SEMICONDUCTOR TRANSISTOR DEVICE
A semiconductor transistor device is provided. The semiconductor transistor device includes a semiconductor substrate, a gate structure, a first isolation...
2019/0103459 MIM CAPACITOR CONTAINING NEGATIVE CAPACITANCE MATERIAL
A capacitor may include a first conductive layer forming a first capacitor plate, a second conductive layer forming a second capacitor plate, and a first...
2019/0103458 Inductor Layout, and a Voltage-Controlled Oscillator (VCO) System
An inductor layout comprising a first inductor and a second inductor. The first and second inductors are electrically and magnetically independent inductors...
2019/0103457 DISPLAY DEVICE
A display device includes a non-display area adjacent a display area, a thin film transistor, a display element, a thin film encapsulation layer, an organic...
2019/0103456 DISPLAY DEVICE
A display device for increasing a repair success rate by easily cutting signal lines in a repair process of subpixels and preventing a short circuit of the...
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