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Patent # Description
2019/0103303 SELECTIVE DEPOSITION OF ALUMINUM AND NITROGEN CONTAINING MATERIAL
Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric...
2019/0103302 SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR FABRICATING THE SAME
A method for fabricating a semiconductor device includes: forming a plurality of bit line structures over a semiconductor substrate; forming a line-type...
2019/0103301 HOLDING APPARATUS
There is provided a holding apparatus which is capable of rotatably holding, while cooling to a cryogenic temperature, a to-be-processed object in a vacuum...
2019/0103300 FILM FORMATION APPARATUS
A film formation apparatus includes a film formation unit which includes a film formation room having an opening at one end, has a target formed of a film...
2019/0103299 SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING THE SAME, AND LAMINATE
Disclosed herein is a semiconductor device including: a support; a double-layered adhesive resin layer formed on the support, an insulating layer and a...
2019/0103298 FILM FOR COMPONENT MANUFACTURE AND COMPONENT MANUFACTURING METHOD
Provided are a film for manufacturing semiconductor component, a film for electronic component manufacture, a method for manufacturing a semiconductor...
2019/0103297 SEMICONDUCTOR DEVICE SORTING SYSTEM AND SEMICONDUCTOR DEVICE
It is an object to provide a technique capable of providing a semiconductor device with information indicating a plurality of electrical characteristics. A...
2019/0103296 SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS
A substrate treatment method in accordance with an exemplary embodiment includes: heating a substrate, for a substrate treatment process, so that a temperature...
2019/0103295 Integrated Circuit Fabrication System with Adjustable Gas Injector
The present disclosure provides a semiconductor fabrication apparatus. The semiconductor apparatus includes a processing chamber; a substrate stage provided in...
2019/0103294 SUBSTRATE LIQUID PROCESSING APPARATUS
A substrate liquid processing apparatus includes an inner tub 34A having a top opening and storing a processing liquid therein; an outer tub 34B provided...
2019/0103293 SYSTEM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A system for manufacturing a semiconductor device includes a main system controller, a sub-system controller, and a process module. The main system controller...
2019/0103292 APPARATUS AND METHOD FOR TREATING SUBSTRATE
Provided are an apparatus and a method for supplying a liquid. An apparatus for treating a substrate includes a substrate support unit to support the...
2019/0103291 SUBSTRATE PROCESSING APPARATUS
A substrate processing apparatus according to an embodiment includes a transport block and a plurality of processing blocks. In the transport block, a...
2019/0103290 THERMAL VAPOR CHAMBER ARRANGEMENT
In some examples, a multiple chip module (MCM) includes a heat sink; a circuit board; a first chip secured to a first location on the circuit board; a first...
2019/0103289 TECHNIQUES TO REDUCE SUBSTRATE REFLOW WARPAGE
Apparatus and methods are provided to reduce warpage of an integrated circuit package while reflowing solder to couple a first substrate of a first electronic...
2019/0103288 PRINTED CIRCUIT BOARD
A printed circuit board according to an embodiment includes: an insulating layer; a first pad disposed on a first surface of the insulating layer; a first...
2019/0103287 COPPER PLASMA ETCHING METHOD AND MANUFACTURING METHOD OF DISPLAY PANEL
A copper plasma etching method according an exemplary embodiment includes: placing a substrate on a susceptor in a process chamber of a plasma etching...
2019/0103286 CONTROL METHOD OF DRY ETCHING APPARATUS
The present invention relates to a control method of a dry etching apparatus which can be applied regardless of materials. The control method of a dry etching...
2019/0103285 REMOVAL OF SURFACE PASSIVATION
Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a...
2019/0103284 Silicon Reflow for Reducing Seam and Void and Bending During Gap Fill
A method includes depositing a silicon layer, which includes first portions over a plurality of strips, and second portions filled into trenches between the...
2019/0103283 MECHANISM FOR MANUFACTURING SEMICONDUCTOR DEVICE
A method for manufacturing a semiconductor device includes forming a gate electrode over a substrate; forming a hard mask over the gate electrode, in which the...
2019/0103282 Etching Solution for Simultaneously Removing Silicon and Silicon-Germanium Alloy From a...
Described herein is an etching solution suitable for the simultaneous removal of silicon and silicon-germanium from a microelectronic device, which comprises:...
2019/0103281 METHOD FOR FORMING FEATURES OF SEMICONDUCTOR STRUCTURE HAVING REDUCED END-TO-END SPACING
A method includes forming a mask layer over a target layer. A first etching process is performed on the mask layer to form a first opening and a second opening...
2019/0103280 SURFACE TREATMENT OF CARBON CONTAINING FILMS USING ORGANIC RADICALS
Surface treatment processes for treating a workpiece with organic radicals are provided. In one example implementation, a method for processing a workpiece...
2019/0103279 SURFACE TREATMENT OF SILICON OR SILICON GERMANIUM SURFACES USING ORGANIC RADICALS
Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include performing an organic radical based surface...
2019/0103278 SELECTIVE DEPOSITION OF METAL SILICIDES
Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is...
2019/0103277 Semiconductor Device Performance Improvement
Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel...
2019/0103276 DEVICE AND METHOD OF DIELECTRIC LAYER
A method includes forming an interlayer dielectric (ILD) and a gate structure over a substrate. The gate structure is surrounded by the ILD. The gate structure...
2019/0103275 PHOSPHORUS OR ARSENIC ION IMPLANTATION UTILIZING ENHANCED SOURCE TECHNIQUES
Apparatus and method for use of solid dopant phosphorus and arsenic sources and higher order phosphorus or arsenic implant source material are described. In...
2019/0103274 METHOD OF TRANSFERRING MICRO DEVICE
A method of transferring micro devices is provided. A carrier substrate having a first surface and a second surface opposite to each other is provided, wherein...
2019/0103273 Method for Producing Group III Nitride Laminate
A method for producing a group III nitride laminate by growing a layer containing a group III nitride single crystal represented by Al.sub.XIn.sub.YGa.sub.ZN,...
2019/0103272 Method for Manufacturing a Semiconductor Device
A method of manufacturing a semiconductor device includes depositing a dielectric layer over a substrate, performing a first patterning to form an opening in...
2019/0103271 SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR DEVICE, AND...
An n.sup.--type epitaxial layer is grown on a front surface of the silicon carbide substrate by a CVD method in a mixed gas atmosphere containing a source gas,...
2019/0103270 SURFACE TREATMENT OF SILICON AND CARBON CONTAINING FILMS BY REMOTE PLASMA WITH ORGANIC PRECURSORS
Surface treatment processes for treating low-k dielectric materials are provided. One example implementation can include a method for processing a workpiece....
2019/0103269 TRANSFERABLE SILICA BILAYER FILM
The present invention inter alia relates to a supported silica bilayer (SiO.sub.2 bilayer) film. In the supported silica bilayer film, the silica bilayer film...
2019/0103268 METHODS AND SYSTEMS FOR COATING A SUBSTRATE WITH A FLUID
Methods and systems for coating a substrate with a fluid are described. In an embodiment, a method may include receiving a substrate in a substrate processing...
2019/0103266 ATOMIC LAYER DEPOSITION OF ANTIMONY OXIDE FILMS
Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony...
2019/0103265 LOW-K FEATURE FORMATION PROCESSES AND STRUCTURES FORMED THEREBY
Semiconductor device structures having low-k features and methods of forming low-k features are described herein. Some examples relate to a surface...
2019/0103264 PROCESS OF FORMING SILICON NITRIDE FILM
A process of depositing a silicon nitride (SiN) film on a nitride semiconductor layer is disclosed. The process includes steps of: (a) loading an epitaxial...
2019/0103263 ION TRAP
An ion trap having a segmented electrode structure having a plurality of segments consecutively positioned along an axis, wherein each segment of the segmented...
2019/0103262 MASS SPECTROMETER, SYSTEM COMPRISING THE SAME, AND METHODS FOR DETERMINING ISOTOPIC ANATOMY OF COMPOUNDS
A first mass spectrometer includes a first introduction device configured to select between a reference material and a first portion of an analyte and...
2019/0103261 METHODS AND SYSTEMS FOR INTEGRATING ION MANIPULATION DEVICES
A switch for coupling a first ion manipulation device to a second ion manipulation device comprises a first surface and a second surface, at least one first...
2019/0103260 INTERACTIVE ANALYSIS OF MASS SPECTROMETRY DATA
This invention relates to graphical user-interactive analysis of data, including in particular, mass spectrographic data analysis, as well as methods and...
2019/0103259 A Method for Extracting Mass Information from Low Resolution Mass-to-Charge Ratio Spectra of Multiply Charged...
An apparatus and method for extracting mass information from low resolution mass-to-charge ratio spectra of multiply charged species is described. Curve...
2019/0103258 Spectrometric Analysis
A method of mass or mobility spectrometry comprising obtaining one or more sample spectra for a sample. The one or more sample spectra are subjected to...
2019/0103257 GOLD SPUTTERING TARGET
A gold sputtering target is made of gold and inevitable impurities, and has a surface to be sputtered. In the gold sputtering target, an average value of...
2019/0103256 PROCESS AND RELATED DEVICE FOR REMOVING BY-PRODUCT ON SEMICONDUCTOR PROCESSING CHAMBER SIDEWALLS
In some embodiments, a method for cleaning a processing chamber is provided. The method may be performed by introducing a processing gas into a processing...
2019/0103255 TEMPERATURE CONTROL METHOD
A temperature control method of controlling a temperature of an object to be processed includes supplying a heat-transfer gas between an object to be processed...
2019/0103254 ULTRA-LOCALIZED AND PLASMA UNIFORMITY CONTROL IN A FABRICATION PROCESS
Described herein are architectures, platforms and methods for providing localized high density plasma sources igniting local gasses during a wafer fabrication...
2019/0103253 CONTROLLING ION ENERGY WITHIN A PLASMA CHAMBER
Systems and methods controlling ion energy within a plasma chamber are described. One of the systems includes an upper electrode coupled to a sinusoidal RF...
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