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Patent # Description
2019/0109272 FLEXIBLE THERMOELECTRIC ENGINE
A thermoelectric engine for heating and cooling a surface. The thermoelectric engine includes a top circuit and bottom circuit. A thermoelectric device is...
2019/0109271 THERMOELECTRIC CONVERSION UNIT, THERMOELECTRIC CONVERSION MODULE, AND EXHAUST-GAS ELECTRICITY GENERATION UNIT
A plurality of thermoelectric conversion modules each includes a plurality of thermoelectric conversion elements arranged adjacent to each other, first...
2019/0109270 ELECTRONIC ASSEMBLIES INCORPORATING HEAT FLUX ROUTING STRUCTURES FOR THERMOELECTRIC GENERATION
Electronic assemblies for thermoelectric generation are disclosed. In one embodiment, an electronic assembly includes a substrate having a first surface and a...
2019/0109269 COMPOUND AND THERMOELECTRIC CONVERSION MATERIAL
The present invention relates to a compound containing at least germanium, tellurium, bismuth, copper, antimony and silver as constituent elements.
2019/0109268 LED PACKAGE INCLUDING CONVERTER CONFINEMENT
A light-emitting device is disclosed, including: a substrate; a light-emitting diode (LED) formed on a first surface of the substrate, the LED being arranged...
2019/0109267 LIGHT EMITTING DEVICE PACKAGE AND LIGHT UNIT INCLUDING THE SAME
Disclosed are a light emitting device package. The light emitting device package includes a body having recess; a first lead frame including a first and second...
2019/0109266 LIGHT-EMITTING DEVICE
Provided is a light-emitting device including a light-emitting element having a peak emission wavelength in a range of from 400 nm to 470 nm, and a fluorescent...
2019/0109265 PACKAGE AND LIGHT EMITTING DEVICE
A package includes a first electrode and a second electrode that are located at a bottom portion of a bottomed recess, and a first resin securing the first...
2019/0109264 LIGHT EMITTING DEVICE AND METHOD OF PRODUCING THE SAME
A light emitting device includes: a resin package including: a plurality of leads that includes: a first lead having an upper surface, and a second lead having...
2019/0109263 LIGHT EMITTING ELEMENT AND LIGHTING DEVICE
A light emitting element according to an embodiment includes a substrate; a light emitting structure including a first conductive semiconductor layer, an...
2019/0109262 LIGHT EMITTING DIODE CONTAINING OXIDIZED METAL CONTACTS
A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer...
2019/0109261 OPTOELECTRONIC DEVICE WITH NON-CONTINUOUS BACK CONTACTS
An optoelectronic device is disclosed. The optoelectronic device comprises a semiconductor structure; a plurality of contacts on the front side of the...
2019/0109260 ULTRA-WIDEBAND LIGHT EMITTING DIODE AND OPTICAL DETECTOR COMPRISING ALUMINUM GALLIUM ANTIMONIDE AND METHOD OF...
Devices, systems, and methods for providing wireless personal area networks (PANs) and local area networks (LANs) using visible and near-visible optical...
2019/0109259 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Disclosed is a semiconductor device comprising a thin film transistor and wirings connected to the thin film transistor, in which the thin film transistor has...
2019/0109258 APPARATUS FOR ALIGNING A SOLAR CELL ELEMENT, SYSTEM FOR USE IN THE MANUFACTURE OF A SOLAR CELL ARRANGEMENT, AND...
The present disclosure provides an apparatus for aligning a solar cell element. The apparatus includes a transfer device configured for moving the solar cell...
2019/0109257 METHOD OF BIFACIAL CELL FABRICATION
A method of producing a bifacial photovoltaic cell is disclosed herein, the method comprising: a) forming an n-dopant-containing layer on a first surface of a...
2019/0109256 LIGHT SOURCE-INTEGRATED LIGHT SENSING SYSTEM AND ELECTRONIC DEVICE INCLUDING THE SAME
A light sensing system includes a plurality of light-emitting devices arranged to have a first optical axis and a plurality of light-receiving devices arranged...
2019/0109255 PHOTOSENSOR
A photosensor includes a light emitting element that radiates light onto an object to be detected and a light receiving element that has a light-receiving...
2019/0109254 Sensor Device And Method For Manufacturing A Sensor Device
A sensor device comprises a semiconductor substrate with a first type of electrical conductivity and with a photodiode structure for detecting incident UV...
2019/0109253 SOLAR CELL AND METHOD FOR MANUFACTURING SAME, AND SOLAR CELL PANEL
A solar cell includes a conductive crystalline silicon substrate, a first conductive silicon layer, a second conductive silicon layer, a first intrinsic...
2019/0109252 CDTE-BASED DOUBLE HETEROSTRUCTURES AND RELATED LIGHT-CONVERSION DEVICES
Devices converting light to electricity (such as solar cells or photodetectors) including a heavily-doped p-type a-SiC.sub.y:H and an ...
2019/0109251 SYSTEM AND METHOD FOR SHINGLING WAFER STRIPS CONNECTED IN PARALLEL
A solar device includes a first string of first solar wafers, wherein a plurality of the first solar wafers each overlap with at least one vertically adjacent...
2019/0109250 PHOTOVOLTAIC CELL FORM ULTRA-SMALL IOT DEVICE WITH MULTI-LEVEL VOLTAGE OUTPUT
A multi-level photovoltaic cell comprises a substrate layer and a plurality of photovoltaic cells positioned above the substrate layer. Each photovoltaic cell...
2019/0109249 TILED FRAMELESS PV-MODULE
A photovoltaic module employing an array of photovoltaic cells disposed between two optically transparent substrates such as to define a closed-loop peripheral...
2019/0109248 COLORED SOLAR PANELS AND STRUCTURES COMPRISING THE SAME
A colored solar module includes a light incident side, a backside, and a photovoltaic cell positioned between the light incident side and the backside. A color...
2019/0109247 TRENCH DOUBLE LAYER HETEROSTRUCTURE
A light sensor includes an N-type semiconductor. The light sensor further includes a P-type semiconductor stacked on at least a portion of the N-type...
2019/0109246 Optoelectronic Semiconductor Chip
An optoelectronic semiconductor chip is disclosed. In an embodiment a chip includes an active zone with a multi-quantum-well structure, wherein the...
2019/0109245 Integrated Photodetector
An integrated circuit that includes a substrate, a photodiode, and a Fresnel structure. The photodiode is formed on the substrate, and it has a p-n junction....
2019/0109244 SEMICONDUCTOR LIGHT RECEIVING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
According to one embodiment, a semiconductor light receiving element includes at least a first periodic structure, a semiconductor multilayered film, and a...
2019/0109243 BACK-GATE CONTROLLED VARACTOR
The present disclosure relates to semiconductor structures and, more particularly, to a back-gate controlled varactor and methods of use and manufacture. The...
2019/0109241 NANOWIRE TRANSISTOR WITH SOURCE AND DRAIN INDUCED BY ELECTRICAL CONTACTS WITH NEGATIVE SCHOTTKY BARRIER HEIGHT
A nanowire transistor includes undoped source and drain regions electrically coupled with a channel region. A source stack that is electrically isolated from a...
2019/0109240 N-TYPE THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF AND MANUFACTURING METHOD OF AN OLED DISPLAY PANEL
The disclosure provides an N-type thin film transistor, including a poly-silicon layer, a gate layer, a source and a drain. The poly-silicon layer includes a...
2019/0109239 MANUFACTURING METHOD OF THIN-FILM TRANSISTOR
The invention relates to a thin-film transistor and a manufacturing method thereof. The manufacturing method of the thin-film transistor includes the following...
2019/0109238 HYBRID CMOS DEVICE AND MANUFACTURING METHOD THEREOF
The disclosure provides a hybrid CMOS device and a manufacturing method thereof. The manufacturing method of the hybrid CMOS device according to the disclosure...
2019/0109237 THIN FILM TRANSISTOR AND METHOD MANUFACTURING FOR SAME
A thin film transistor and a manufacturing method thereof are provided. The method includes sequentially forming a gate, a first sub-insulation layer on a...
2019/0109236 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes a substrate, at least one active region, at least one gate structure, and an insulating structure. The active region is present...
2019/0109235 FIN-TYPE FIELD EFFECT TRANSISTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
A fin-type field effect transistor comprising a substrate, a plurality of insulators, at least one gate stack and strained material portions is described. The...
2019/0109234 TECHNIQUES FOR INTEGRATION OF GE-RICH P-MOS SOURCE/DRAIN
Techniques are disclosed for improved integration of germanium (Ge)-rich p-MOS source/drain contacts to, for example, reduce contact resistance. The techniques...
2019/0109233 INVERTED LEADS FOR PACKAGED ISOLATION DEVICES
A packaged multichip isolation device includes leadframe including a first and second die pad, with a first and second lead extending outside a molded body...
2019/0109232 LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR (LDMOS) TRANSISTOR ON A SEMICONDUCTOR ON INSULATOR (SOI) LAYER...
An integrated circuit is described. The integrated circuit includes a laterally diffused metal oxide semiconductor (LDMOS) transistor. The LDMOS is on a first...
2019/0109231 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A wide band gap semiconductor device includes a semiconductor layer, a trench formed in the semiconductor layer, first, second, and third regions having...
2019/0109230 High Voltage Termination Structure of a Power Semiconductor Device
A power semiconductor transistor includes an electrically conductive contact structure including a plurality of contacts. A first one of the contacts is...
2019/0109229 Apparatus and Method for Power MOS Transistor
A method includes forming a first semiconductor layer over a substrate, forming a second semiconductor layer over the first semiconductor layer, forming a...
2019/0109228 SEMICONDUCTOR DEVICE
Plural trenches are provided in a semiconductor substrate. First p.sup.+-type regions underlie bottoms of the trenches. A MOS gate is embedded in first...
2019/0109227 SEMICONDUCTOR DEVICE
At bottom of a gate trench, a conductive layer is provided. A Schottky junction is formed along a side wall of the gate trench by the conductive layer and the...
2019/0109226 Alternator Assembly Having a Gated Diode Arranged in a Load Path Between an Input Terminal and an Output Terminal
An alternator assembly includes an input terminal configured to input an alternating voltage, an output terminal configured to output a rectified voltage, and...
2019/0109225 POWER MOSFET DEVICE AND MANUFACTURING PROCESS THEREOF
A MOSFET device is integrated in a body of semiconductor material of a first conductivity type accommodating a body region, of a second conductivity type, and...
2019/0109224 NITRIDE SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR APPARATUS
A nitride semiconductor apparatus includes a nitride semiconductor layer, a gate insulating film, a source electrode, a drain electrode, and a gate electrode....
2019/0109223 MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE
Present disclosure provides a method for manufacturing a semiconductor device, including providing a substrate, forming a first III-V compound layer over the...
2019/0109222 SEMICONDUCTOR DEVICES HAVING A PLURALITY OF UNIT CELL TRANSISTORS THAT HAVE SMOOTHED TURN-ON BEHAVIOR AND...
A semiconductor device includes a plurality of unit cell transistors on a common semiconductor structure, the unit cell transistors electrically connected in...
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