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Patent # Description
2019/0109018 ELECTRONIC DEVICE WITH TOP SIDE PIN ARRAY AND MANUFACTURING METHOD THEREOF
An electronic device and a manufacturing method thereof. As non-limiting examples, various aspects of this disclosure provide an electronic device having a top...
2019/0109017 METHOD FOR MANUFACTURING CONDUCTIVE LINE
A method for manufacturing conductive lines is provided. A first metal layer is formed over a carrier substrate. A second metal layer is formed over the first...
2019/0109016 Leadframes in Semiconductor Devices
In one instance, a method of forming a semiconductor package with a leadframe includes cutting, such as with a laser, a first side of a metal strip to a depth...
2019/0109015 Semiconductor Device and Method of Balancing Surfaces of an Embedded PCB Unit with a Dummy Copper Pattern
A semiconductor device has a substrate. A conductive via is formed through the substrate. A plurality of first contact pads is formed over a first surface of...
2019/0109014 GUARD RING STRUCTURE OF SEMICONDUCTOR ARRANGEMENT
Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided. A semiconductor arrangement...
2019/0109013 METHOD OF FORMING SEMICONDUCTOR DEVICE
A method of forming a semiconductor device includes following steps. First of all, a substrate is provided, and a stacked structure is formed on the substrate....
2019/0109012 SUBSTRATE PROCESSING METHOD
In a substrate processing method for etching a silicon oxide layer formed on a surface of a substrate, a surface of the silicon oxide layer is hydrophilized....
2019/0109011 Formation of Superhydrophobic Surfaces
Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block...
2019/0109010 METHOD OF ETCHING SUBSTRATE
A method of forming patterns of a semiconductor device includes forming a photoresist pattern, which contains a first carbon compound, on a substrate,...
2019/0109009 METHOD FOR SELECTIVELY DEPOSITING A METALLIC FILM ON A SUBSTRATE
A method for selectively depositing a metallic film on a substrate comprising a first dielectric surface and a second metallic surface is disclosed. The method...
2019/0109008 MODULE INCLUDING METALLIZED CERAMIC TUBES FOR RF AND GAS DELIVERY
A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a...
2019/0109007 LIGHT IRRADIATION TYPE HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS
A metal film is deposited on a front surface of a semiconductor wafer of silicon. After the semiconductor wafer is received in a chamber, the pressure in the...
2019/0109006 Wrap-Around Contact Plug and Method Manufacturing Same
A method includes forming a source/drain region, and in a vacuum chamber or a vacuum cluster system, preforming a selective deposition to form a metal silicide...
2019/0109005 METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS
A method of manufacturing a semiconductor apparatus includes preparing a semiconductor substrate, and forming a Schottky electrode that is in Schottky contact...
2019/0109004 Selective Film Growth for Bottom-Up Gap Filling
A method includes etching a portion of a semiconductor material between isolation regions to form a trench, forming a semiconductor seed layer extending on a...
2019/0109003 SEMICONDUCTOR NANOWIRE FABRICATION
Methods are provided for fabricating semiconductor nanowires on a substrate. A nanowire template is formed on the substrate. The nanowire template defines an...
2019/0109002 METHOD FOR DEPOSITING A METAL CHALCOGENIDE ON A SUBSTRATE BY CYCLICAL DEPOSITION
A method for depositing a metal chalcogenide on a substrate by cyclical deposition is disclosed. The method may include, contacting the substrate with at least...
2019/0109001 SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND METHOD FOR PRODUCING THESE
A sputtering target including an oxide that includes an indium (In) element, a tin (Sn) element, a zinc (Zn) element and an aluminum (Al) element, wherein the...
2019/0109000 LOCALIZED ELECTRON BEAM INDUCED DEPOSITION OF SILICON CARBIDE
A method for produce a silicon-carbide film by admitting a gaseous silicon-carbide precursor into a vacuum chamber containing a substrate and directing an...
2019/0108999 METHOD FOR GROWING GALLIUM NITRIDE BASED ON GRAPHENE AND MAGNETRON SPUTTERED ALUMINIUM NITRIDE
The present invention discloses a method for growing gallium nitride based on graphene and magnetron sputtered aluminum nitride, and a gallium nitride thin...
2019/0108998 ENGINEERING OF FERROELECTRIC MATERIALS IN SEMICONDUCTOR DEVICES BY SURFACE POTENTIAL MODULATION
In semiconductor devices, high-k dielectric materials may be formed on the basis of engineered surface conditions, thereby contributing to superior uniformity...
2019/0108997 METHOD FOR PROCESSING WORKPIECE
According to an embodiment, a wafer W includes a layer EL to be etched, an organic film OL, an antireflection film AL, and a mask MK1, and a method MT...
2019/0108996 METHOD OF PRODUCING LIQUID CRYSTAL PANEL
A method of producing a liquid crystal panel includes a first dry-cleaning process of dry cleaning a glass substrate for a liquid crystal panel, a wet-cleaning...
2019/0108995 LED LIGHT APPARATUS AND ASSEMBLING METHOD THEREOF
A conductive structure comprising: a plurality of conductive devices; a first conductive spring sheet, comprising a first connecting point; and a second...
2019/0108994 Dual Parabolic Laser Driven Sealed Beam Lamp
The invention is directed to a sealed high intensity illumination device configured to receive a laser beam from a laser light source. A sealed chamber is...
2019/0108993 ION TRAP MASS SPECTROMETRY DEVICE AND MASS SPECTROMETRY METHOD USING SAID DEVICE
After various ions of sample origin have been captured within an ion trap, unnecessary ions other than a target ion having a specific m/z are ejected from the...
2019/0108992 SOLID PHASE EXTRACTION WITH CAPILLARY ELECTROPHORESIS
Methods, systems and devices that provide fluid devices with at least one SPE bed adjacent (upstream of) a separation channel which may be in communication...
2019/0108991 IONIZER AND MASS SPECTROMETER SYSTEM
In the mass spectrometer system, a tip portion of a cylindrical portion (891) of a capillary (89) is coated with a coating material (892), the tip portion...
2019/0108990 Frequency Modulated Radio Frequency Electric Field For Ion Manipulation
A method of manipulating ions comprises injecting ions between a first surface and a second surface positioned parallel to and spaced apart from each other and...
2019/0108989 Phototube and Method of Making It
Disclosed herein is a method comprising: emitting electrons from an electron ejector in response to an incident photon; driving the electrons through a hole...
2019/0108988 MULTI-PATTERNED SPUTTER TRAPS AND METHODS OF MAKING
A sputtering chamber particle trap comprises first and second patterns formed on at least a portion of a surface of the particle trap. The first pattern...
2019/0108987 PARTICLE GENERATION PREVENTING METHOD AND VACUUM APPARATUS
A particle generation preventing method for preventing particle generation in a vacuum apparatus including an alumite-treated component is provided. The...
2019/0108986 PLASMA PROCESSING APPARATUS, AND METHOD AND PROGRAM FOR CONTROLLING ELEVATION OF FOCUS RING
A plasma processing apparatus includes a mounting table, an acquisition unit, a calculation unit, and an elevation control unit. The mounting table mounts...
2019/0108985 BATCH TYPE PLASMA SUBSTRATE PROCESSING APPARATUS
Provided is a batch-type substrate processing apparatus which supplies, into a processing space, a process gas decomposed in a separate space. The substrate...
2019/0108984 PLASMA ELECTRODE AND PLASMA PROCESSING DEVICE
A plasma electrode is provided with an electrode plate, a ground plate, and an insulating plate arranged between the electrode plate and the ground plate....
2019/0108983 SPLIT SLIT LINER DOOR
Embodiments disclosed herein generally relate to a substrate processing chamber component assembly with a split slit liner door assembly. In one embodiment,...
2019/0108982 HIGH ENERGY ATOMIC LAYER ETCHING
Methods and apparatus for performing high energy atomic layer etching are provided herein. Methods include providing a substrate having a material to be...
2019/0108981 PLASMA REACTOR HAVING DIGITAL CONTROL OVER ROTATION FREQUENCY OF A MICROWAVE FIELD WITH DIRECT UP-CONVERSION
A plasma reactor for processing a workpiece has a microwave source with a digitally synthesized rotation frequency using direct digital up-conversion and a...
2019/0108980 METHOD AND APPARATUS FOR CHANGING THE APPARENT SOURCE IMPEDANCE OF A GENERATOR
A method for controlling a generator connected to a load involving obtaining a first measured value (M1) related to a forward power calculated with respect to...
2019/0108979 PLASMA PROCESSING APPARATUS AND MEASUREMENT CIRCUIT
A plasma processing apparatus 10 includes a chamber 17 in which an internal space is provided and a target object carried into the internal space is processed...
2019/0108978 SELF-NEUTRALIZED RADIO FREQUENCY PLASMA ION SOURCE
A plasma ion source includes a plasma generation unit comprising a plasma discharge chamber adapted to generate and sustain a plasma confined therein, a gas...
2019/0108977 IMPEDANCE MATCHING SYSTEM, IMPEDANCE MATCHING METHOD, AND SEMICONDUCTOR PROCESSING APPARATUS THEREOF
An impedance matching system is provided. The impedance matching system includes: an impedance matching device arranged between a radio frequency (RF) power...
2019/0108976 MATCHED SOURCE IMPEDANCE DRIVING SYSTEM AND METHOD OF OPERATING THE SAME
A radio frequency (RF) generator having an effective source impedance Z.sub.g at a reference point (e.g. at the generator output) includes a reference input...
2019/0108975 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
A plasma processing apparatus includes a high frequency antenna having first and second antenna elements. One end of the first antenna element is grounded and...
2019/0108974 INDUCTIVELY COUPLED PLASMA SOURCE
Disclosed herein is an apparatus for processing a substrate using an inductively coupled plasma source. An inductively coupled plasma source utilizes a power...
2019/0108973 ION BEAM PROCESSING APPARATUS, ELECTRODE ASSEMBLY, AND METHOD OF CLEANING ELECTRODE ASSEMBLY
Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions...
2019/0108972 SYSTEM AND METHOD FOR IN-SITU BEAMLINE FILM STABILIZATION OR REMOVAL IN THE AEF REGION
An ion implantation system has an ion source configured form an ion beam and an angular energy filter (AEF) having an AEF region. A gas source passivates...
2019/0108971 SPECIMEN PREPARATION AND INSPECTION IN A DUAL-BEAM CHARGED PARTICLE MICROSCOPE
A method of preparing a specimen in a dual-beam charged particle microscope having: an ion beam column, that can produce an ion beam that propagates along an...
2019/0108970 CHARGED PARTICLE BEAM DEVICE
An object of the present invention is to provide a charged particle beam device capable of correcting an image drift caused by stage deformation or the like...
2019/0108969 Charged Particle Beam Device and Method for Adjusting Charged Particle Beam Device
The objective of the present invention is to propose a charged particle beam device with which an imaging optical system and an irradiation optical system can...
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