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| Patent # | Description |
|---|---|
| US-9,646,849 |
Semiconductor device with nano-gaps and method for manufacturing the same A semiconductor device and a method for manufacturing the same are provided. A semiconductor device includes a substrate, a first capping layer formed above the... |
| US-9,646,848 |
Etching method, etching apparatus and storage medium A method for etching a silicon oxide film on a target substrate where an etching area is partitioned by pattern layers and stopping the etching before a base... |
| US-9,646,847 |
Method for manufacturing array substrate, film-etching monitoring method
and device A method for manufacturing an array substrate, a film-etching monitoring and a film-etching monitoring device. The monitoring method comprises: monitoring and... |
| US-9,646,846 |
Method for producing a multilevel microelectronic structure A method for producing a multilevel microelectronic structure includes formation of a first layer, production of at least one second layer at least partially... |
| US-9,646,845 |
Method of forming a mask for substrate patterning Techniques herein include using acid-diffusion--controllable to specific diffusion lengths--to create sacrificial structures that, when removed, define a... |
| US-9,646,844 |
Method for forming stair-step structures A method for forming a stair-step structure in a substrate is provided. An organic mask is formed over the substrate. A hardmask with a top layer and sidewall... |
| US-9,646,843 |
Tunable magnetic field to improve uniformity Implementations described herein provide a magnetic ring which enables both lateral and azimuthal tuning of the plasma in a processing chamber. In one... |
| US-9,646,842 |
Germanium smoothing and chemical mechanical planarization processes Method for chemical mechanical planarization is provided, which includes: forming a dielectric layer containing at least one opening, the dielectric layer is... |
| US-9,646,841 |
Group III arsenide material smoothing and chemical mechanical
planarization processes A chemical mechanical planarization for a Group III arsenide material is provided in which at least one opening is formed within a dielectric layer located on a... |
| US-9,646,840 |
Method for CMP of high-K metal gate structures A method for manufacturing a semiconductor device includes providing a substrate containing a front-end device and forming a dielectric layer on the substrate.... |
| US-9,646,839 |
Ta based ohmic contact A method of forming an Ohmic contact including forming a Ta layer in a contact area of a barrier, forming a Ti layer on the first Ta layer, and forming an Al... |
| US-9,646,838 |
Method of forming a semiconductor structure including silicided and
non-silicided circuit elements A method includes providing a semiconductor structure including at least one first circuit element including a first semiconductor material and at least one... |
| US-9,646,837 |
Ion implantation method and ion implantation apparatus An ion implantation method includes transporting ions to a wafer as an ion beam, causing the wafer to undergo wafer mechanical slow scanning and also causing... |
| US-9,646,836 |
Semiconductor device manufacturing method Provided is a semiconductor device manufacturing method such that miniaturization of a parallel p-n layer can be achieved, and on-state resistance can be... |
| US-9,646,835 |
Wafer structure for electronic integrated circuit manufacturing A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device... |
| US-9,646,834 |
Method for manufacturing semiconductor device There are prepared a semiconductor substrate having a first main surface and a second main surface, and an adhesive tape having a third main surface and a... |
| US-9,646,833 |
Forming patterned graphene layers An apparatus and method for forming a patterned graphene layer on a substrate. One such method includes forming at least one patterned structure on a substrate;... |
| US-9,646,832 |
Porous fin as compliant medium to form dislocation-free heteroepitaxial
films A method for forming a heteroepitaxial layer includes forming an epitaxial grown layer on a monocrystalline substrate and patterning the epitaxial grown layer... |
| US-9,646,831 |
Advanced excimer laser annealing for thin films The present disclosure relates to a new generation of laser-crystallization approaches that can crystallize Si films for large displays at drastically increased... |
| US-9,646,830 |
Semiconductor structure and fabrication method thereof According to a semiconductor structure fabrication method, a semiconductor substrate having gate structures is provided. Sidewalls of the gate structures may be... |
| US-9,646,829 |
Manufacturing method of semiconductor device A method for manufacturing a highly reliable semiconductor device with less change in threshold voltage is provided. An insulating film from which oxygen can be... |
| US-9,646,828 |
Reacted particle deposition (RPD) method for forming a compound
semi-conductor thin-film A method is provided for fabricating a thin-film semiconductor device. The method includes providing a plurality of raw semiconductor materials. The raw... |
| US-9,646,827 |
Method for smoothing surface of a substrate containing gallium and
nitrogen Disclosed is a method for processing GaN based substrate material for manufacturing light-emitting diodes, lasers, and other types of devices. In various... |
| US-9,646,826 |
Method of manufacturing semiconductor device, substrate processing
apparatus, and recording medium A method of manufacturing a semiconductor device includes alternately performing supplying a first process gas containing silicon and a halogen element to a... |
| US-9,646,825 |
Method for fabricating a composite structure to be separated by
exfoliation The invention relates to a method for fabricating a composite structure comprising a layer to be separated by irradiation, the method comprising the formation... |
| US-9,646,824 |
Method for manufacturing semiconductor device To form a MOSFET over a silicon carbide substrate, when a heat treatment accompanied by nitration is carried out to reduce the interface state density in the... |
| US-9,646,823 |
Semiconductor dielectric interface and gate stack A semiconductor/dielectric interface having reduced interface trap density and a method of manufacturing the interface are disclosed. In an exemplary... |
| US-9,646,822 |
Active regions with compatible dielectric layers A method to form a semiconductor structure with an active region and a compatible dielectric layer is described. In one embodiment, a semiconductor structure... |
| US-9,646,821 |
Method of manufacturing semiconductor device A method of manufacturing a semiconductor device includes processing a substrate accommodated in a process container accommodated in a housing by supplying a... |
| US-9,646,820 |
Methods for forming conductive titanium oxide thin films The present disclosure relates to the deposition of conductive titanium oxide films by atomic layer deposition processes. Amorphous doped titanium oxide films... |
| US-9,646,819 |
Method for forming surface oxide layer on amorphous silicon The invention provides a method for forming a surface oxide layer on an amorphous silicon including steps: using a HF acid to clean a surface of the amorphous... |
| US-9,646,818 |
Method of forming planar carbon layer by applying plasma power to a
combination of hydrocarbon precursor and... Aspects of the disclosure pertain to methods of forming planar amorphous carbon layers on patterned substrates. Layers formed according to embodiments outlined... |
| US-9,646,817 |
Semiconductor cleaner systems and methods In an embodiment, the present invention discloses a EUV cleaner system and process for cleaning a EUV carrier. The euv cleaner system comprises separate dirty... |
| US-9,646,815 |
Integrated nanospray system Integrated nanospray ionization package, comprising a nanospray emitter, a push button carriage with button element projecting through a bore in said package,... |
| US-9,646,814 |
Method and apparatus for reacting ions A method of mass spectrometry is disclosed having a mode comprising: providing a source of precursor ions and reagent ions for reacting with said precursor... |
| US-9,646,813 |
Mass spectrometer A mass spectrometer is disclosed comprising a first quadrupole rod set mass filter, a collision cell, an ion mobility spectrometer or separator, an ion guide or... |
| US-9,646,812 |
MALDI sample preparation methods and targets The present invention is concerned with a method of preparing a MALDI sample, the method comprising the steps of: (a) mixing a solid sample precursor comprising... |
| US-9,646,811 |
Miniaturized ion mobility spectrometer By utilizing the combination of a unique electronic ion injection control circuit in conjunction with a particularly designed drift cell construction, the... |
| US-9,646,810 |
Method for improving mass spectrum reproducibility and quantitative
analysis method using same Methods are described for improving reproducibility of mass spectrum and quantitative analysis method using the same. More particularly, methods for improving... |
| US-9,646,809 |
Intaglio printing plate coating apparatus There is described an intaglio printing plate coating apparatus (1) comprising a vacuum chamber (3) having an inner space (30) adapted to receive at least one... |
| US-9,646,808 |
Cold plasma annular array methods and apparatus Methods and apparatus are described that use an array of two or more cold plasma jet ports oriented to converge at a treatment area. The use of an array permits... |
| US-9,646,807 |
Sealing groove methods for semiconductor equipment In one embodiment, a surface having a sealing groove formed therein. The sealing groove is configured to accept an elastomeric seal. The sealing groove includes... |
| US-9,646,806 |
Plasma electrode device and method for manufacturing the same Provided are a plasma electrode device and a manufacturing method thereof. The plasma electrode device includes a first substrate including a first substrate... |
| US-9,646,805 |
Focused ion beam system and method of making focal adjustment of ion beam A focused ion beam system is offered which can make a focal adjustment without relying on the structure of a sample while suppressing damage to the sample to a... |
| US-9,646,804 |
Method for calibration of a CD-SEM characterisation technique A calibration method for a CD-SEM technique, includes determining a match function converting at least one parameter obtained by modelling a measurement... |
| US-9,646,803 |
Transmission electron microscopy supports and methods of making A method of making a Transmission Electron Microscopy support comprising depositing a sacrificial layer to the top side of a lacey or holey carbon structure or... |
| US-9,646,802 |
Method and apparatus for electron beam lithography Disclosed is an apparatus in a semiconductor lithography system. The apparatus comprises a multiplexer and a plurality of imaging elements. The plurality is... |
| US-9,646,801 |
Multilayer X-ray source target with high thermal conductivity In various embodiments, a multi-layer X-ray source target is provided having two or more layers of target material at different depths and different... |
| US-9,646,800 |
Traveling wave tube system and control method of traveling wave tube A traveling wave tube system includes a traveling wave tube, and a power supply device for supplying required power supply voltages to the respective electrodes... |
| US-9,646,799 |
Apparatus for sealing arc-tube Provided is an apparatus for sealing an arc-tube including a jig body including an electrode pin hole into which an end part of the electrode pin inserted into... |
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