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Patent # Description
US-9,923,080 Gate height control and ILD protection
Embodiments are directed to methods of forming a semiconductor device and resulting structures for improving gate height control and providing interlayer...
US-9,923,079 Composite dummy gate with conformal polysilicon layer for FinFET device
A method includes providing a fin structure containing a semiconductor material. The method includes forming a gate dielectric layer over the fin structure, the...
US-9,923,078 Trench silicide contacts with high selectivity process
A method for forming self-aligned contacts includes patterning a mask between fin regions of a semiconductor device, etching a cut region through a first...
US-9,923,077 Methods of curing a dielectric layer for manufacture of a semiconductor device
A method of curing a dielectric layer, such as a dielectric layer that has a relatively small thickness and/or a narrow width or a complicated shape, is...
US-9,923,076 Gate patterning for AC and DC performance boost
A method to reduce parasitic capacitance in a high-k dielectric metal gate (HKMG) transistor with raised source and drain regions (RSD) is provided including...
US-9,923,075 Low temperature poly-silicon thin film transistor and manufacturing method thereof
A low temperature poly-silicon thin film transistor and a manufacturing method thereof are disclosed. The method includes forming an active layer on a base...
US-9,923,074 Pure boron for silicide contact
A semiconductor device includes a gate disposed over a substrate; a source region and a drain region on opposing sides of the gate; and a pair of trench...
US-9,923,073 Semiconductor device with surface insulating film
A semiconductor device of the present invention includes a semiconductor layer of a first conductivity type having a cell portion and an outer peripheral...
US-9,923,072 Semiconductor component having a semiconductor body with a cutout
A semiconductor component includes a semiconductor body having a surface and a cutout in the semiconductor body. The cutout extends from the surface of the...
US-9,923,071 Semiconductor process
A fin-shaped field effect transistor includes a substrate and a gate. The substrate includes an active area, where the active area includes a fin structure...
US-9,923,070 Semiconductor structure and manufacturing method thereof
A semiconductor structure includes a substrate, at least one first gate structure, at least one first spacer, at least one source drain structure, at least one...
US-9,923,069 Nitride semiconductor device
A nitride semiconductor device includes: a stacked structure portion having an active region; first and second main electrodes extending in a first direction;...
US-9,923,068 Array substrate and method of fabricating the same
An array substrate includes an oxide semiconductor layer; an etch stopper including a first contact hole exposing each of both sides of the oxide semiconductor...
US-9,923,067 Thin-film transistor and method for fabricating the same, array substrate and method for fabricating the same,...
A thin-film transistor (TFT) includes a gate electrode, a gate insulation layer, a source electrode, a drain electrode and an active layer arranged on a base...
US-9,923,066 Wide bandgap semiconductor device
A semiconductor device includes a source zone electrically connected to a first load terminal, a contiguous zone isolating the source zone from a drift zone,...
US-9,923,065 Fabricating method of fin-type semiconductor device
In accordance with various embodiments of the disclosed subject matter, a semiconductor device, and a fabricating method thereof are provided. In some...
US-9,923,063 Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride...
A group III nitride composite substrate with a diameter of 75 mm or more includes a support substrate and a group III nitride film with a thickness of 50 nm or...
US-9,923,062 Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device
An infrared ray absorbing film is selectively formed on a surface of a silicon carbide semiconductor substrate in a predetermined area. The infrared ray...
US-9,923,061 Semiconductor structure with enhanced withstand voltage
A semiconductor structure including a substrate, a buffer layer, a superlattice formed on the buffer layer, the superlattice including a pattern including n...
US-9,923,060 Gallium nitride apparatus with a trap rich region
A method cold-melts a high conductivity region between a high-resistivity silicon substrate and a gallium-nitride layer to form a trap rich region that...
US-9,923,059 Connection arrangements for integrated lateral diffusion field effect transistors
In an active layer over a semiconductor substrate, a semiconductor device has a first lateral diffusion field effect transistor (LDFET) that includes a source,...
US-9,923,058 Semiconductor device having a fin
Provided is a semiconductor device. The semiconductor device includes a fin disposed on a substrate along a first direction. A sacrificial layer is disposed on...
US-9,923,057 Semiconductor structures employing strained material layers with defined impurity gradients and methods for...
Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the...
US-9,923,056 Method of fabricating a MOSFET with an undoped channel
A method of fabricating a MOSFET with an undoped channel is disclosed. The method comprises fabricating on a substrate a semiconductor structure having a dummy...
US-9,923,055 Inner spacer for nanosheet transistors
Embodiments are directed to a method of fabricating inner spacers of a nanosheet FET. The method includes forming sacrificial and channel nanosheets over a...
US-9,923,054 Fin structure having hard mask etch stop layers underneath gate sidewall spacers
A hard mask etch stop is formed on the top surface of tall fins to preserve the fin height and protect the top surface of the fin from damage during etching...
US-9,923,053 Silicon-carbide transistor device with a shielded gate
A SIC transistor device includes a silicon-carbide semiconductor substrate having a plurality of first doped regions laterally spaced apart from one another and...
US-9,923,052 III-nitride power semiconductor device
A power semiconductor device includes a III-nitride heterojunction body including a first III-nitride body and a second III-nitride body having a different band...
US-9,923,051 Substrate noise isolation structures for semiconductor devices
An example a semiconductor device includes a first circuit and a second circuit formed in a semiconductor substrate. The semiconductor device further includes a...
US-9,923,050 Semiconductor wafer and a method for producing the semiconductor wafer
A semiconductor wafer has a silicon single crystal substrate having a top surface and a stack of layers covering the top surface, the stack of layers containing...
US-9,923,049 Compound semiconductor device and method for manufacturing the same
A compound semiconductor device includes: a substrate; a first barrier layer of a nitride semiconductor formed over the substrate; a well layer of a nitride...
US-9,923,048 Monolayer thin film capacitor
A monolayer thin film capacitor includes: a bottom electrode; a top electrode; a dielectric layer disposed between the bottom electrode and the top electrode; a...
US-9,923,047 Method for manufacturing a capacitor for semiconductor devices
The inventive concepts provide semiconductor devices and methods for manufacturing the same in which the method includes forming a capacitor including a bottom...
US-9,923,046 Semiconductor device resistor structure
A resistor body is separated from a doped well in a substrate by a resistor dielectric material layer. The doped well is defined by at least one doped region...
US-9,923,045 Inductor element, inductor element manufacturing method, and semiconductor device with inductor element mounted...
An inductor element is formed in a multiple layer lead structure including a lead, an insulative layer that insulates leads above and below, and a via provided...
US-9,923,044 Packaging substrate, display panel and curved-surface display panel
The present disclosure relates to the field of display technology, and provides a packaging substrate, a display panel and a curved-surface display panel. The...
US-9,923,043 Organic light-emitting display apparatus
An organic light-emitting apparatus includes a substrate including an active area, a dead area, and a pad area, a display unit disposed in the active area and...
US-9,923,042 Organic light-emitting diode (OLED) display
An organic light-emitting diode (OLED) display is disclosed. In one aspect, the display includes a substrate and a plurality of pixels formed over the...
US-9,923,041 Display device with transistor sampling for improved performance
A display device including a pixel array having a plurality of pixels arranged in a matrix form, each of the pixels including a sampling transistor configured...
US-9,923,040 Array substrate and display device
The present invention relates to an array substrate and a display device. The array substrate comprises a first thin film transistor arranged on a non-display...
US-9,923,039 Display panels, methods of manufacturing the same and organic light emitting display devices having the same
A display device includes a substrate and first, second and third thin film transistor. The first thin film transistor is disposed over the substrate, and...
US-9,923,038 Organic EL display device
Provided is a display device including a pixel. The pixel has: a conductive film; an interlayer insulating film over the conductive film; a first electrode over...
US-9,923,037 Organic light-emitting display apparatus and method of manufacturing the same
An organic light-emitting display apparatus including a substrate; a thin-film transistor (TFT) arranged on the substrate; a black matrix located between the...
US-9,923,036 Thin film transistor array substrate and method of fabricating the same
Disclosed is a display device that may include a thin film transistor array substrate that includes a plurality of first sub-pixels and a plurality of second...
US-9,923,035 Method for producing organic electronic devices with bank structures, bank structures and electronic devices...
The present invention relates to a process for producing an organic electronic device, wherein a layer is selectively swelled with a swelling solvent so as to...
US-9,923,034 Display panel and display device
The present invention provides a display panel and a display device including the display panel. The display panel comprises a plurality of pixels each...
US-9,923,033 Display device
According to an aspect, a display device includes a display unit in which a plurality of pixels are arranged in a matrix along two directions intersecting with...
US-9,923,032 Stacked organic light emitting device and method of manufacturing the same
An organic light emitting device, an organic light emitting display device, and a method of manufacturing a sub-organic light emitting device, the device...
US-9,923,031 Organic light-emitting diode array substrate and display apparatus
An organic light-emitting diode (OLED) array substrate and a display apparatus are provided. The OLED array substrate includes a plurality of OLEDs; the OLED...
US-9,923,030 Organic light-emitting device
An organic light-emitting device includes a red emission layer formed by mixing a first host made of a carbazole-based material, a second host made of a metal...
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