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Patent # Description
US-9,923,029 Semiconductor constructions, electronic systems, and methods of forming cross-point memory arrays
Some embodiments include selectively conducting devices having a first electrode, a second electrode, and dielectric material between the first and second...
US-9,923,028 Resistive memory and method for manufacturing the same
A semiconductor structure includes a memory unit structure. The memory unit structure includes a transistor, a first electrode, two second electrode, and two...
US-9,923,027 Structure and method for memory cell array
A memory cell array structure includes memory cells arranged in m rows and n columns on a substrate, and n columns of first and second well regions with...
US-9,923,026 Electronic device including a semiconductor memory having a barrier layer
Provided an electronic device including a semiconductor memory. The semiconductor memory may include: a selecting element; a variable resistance element...
US-9,923,025 Magnetoresistive random access memory (MRAM) die including a magnetic field sensing structure
A magnetoresistive random access memory (MRAM) die may include a plurality of MRAM cells, and a magnetic field sensing structure. The magnetic field sensing...
US-9,923,024 CMOS image sensor with reduced cross talk
An imaging sensor pixel comprises a highly resistive N.sup.- doped semiconductor layer with a front side and a back side. At the front side, there are at least...
US-9,923,023 Image pickup apparatus and method for manufacturing image pickup apparatus
At least one of a passivation film extending from a pixel circuit region to a peripheral circuit region and a member disposed between a semiconductor layer and...
US-9,923,022 Array of optoelectronic structures and fabrication thereof
A method of fabrication of an array of optoelectronic structures. The method first provides a crystalline substrate having cells corresponding to individual...
US-9,923,021 Image sensor
There is provided an image sensor including: a plurality of first electrodes respectively formed within a plurality of pixel areas, the pixel areas being formed...
US-9,923,020 Camera module and method of manufacturing the same
Embodiments of the present invention provide a camera module and a method of manufacturing the same, the camera module comprising a sensor assembly, at least...
US-9,923,019 Semiconductor device, manufacturing method thereof and imaging apparatus
A semiconductor device for converting incident light into an electric current includes a semiconductor substrate; an electrode embedded in the semiconductor...
US-9,923,018 Image sensor
Disclosed is an improvement of strength of adhesion between a photoconductive layer and a substrate. The image sensor includes a first electrode and a...
US-9,923,017 Monolithic active pixel radiation detector with shielding techniques
A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a...
US-9,923,016 High-dynamic-range pixel
A pixel including a photodiode having a first pole coupled through a transfer MOS transistor to a node for sensing charges of a first type stored in the...
US-9,923,015 Infrared photosensor
A thermal diode for a photosensor of a thermal imaging camera includes a semiconductor substrate having a surface and two doped structures set apart from each...
US-9,923,014 Image sensor and method of manufacturing the same
An image sensor includes a first charge storage region of a first conductive type disposed in a substrate, a second charge storage region of a second conductive...
US-9,923,013 Sensor device, image sensor array and manufacturing method of sensor device
A sensor device is disclosed. The sensor device include: a detector having a contact formation region; an insulating layer disposed over the detector; a...
US-9,923,012 Image pickup apparatus and radiation image pickup system
An image pickup apparatus includes a pixel array including a plurality of pixels arranged in a two-dimensional pattern, each of which includes a conversion...
US-9,923,011 Semiconductor device structure with stacked semiconductor dies
A semiconductor device structure is provided. The semiconductor device structure includes a first semiconductor die and a second semiconductor die. The...
US-9,923,010 Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic device
The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can...
US-9,923,009 Image sensor with hybrid deep trench isolation
An image sensor includes a plurality of photodiodes disposed in a semiconductor material between a first side and a second side of the semiconductor material....
US-9,923,008 Wafer-level array cameras and methods for fabricating the same
A wafer-level array camera includes (i) an image sensor wafer including an image sensor array, (ii) a spacer disposed on the image sensor wafer, and (iii) a...
US-9,923,007 Metal mirror based multispectral filter array
A device may include a multispectral filter array disposed on the substrate. The multi spectral filter array may include a first metal mirror disposed on the...
US-9,923,006 Optical detection element and solid-state image pickup device
A radiation tolerant optical detection element includes: a p-type base-body region; a gate insulating film provided on an upper surface of the base-body region;...
US-9,923,005 Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
A solid-state imaging device including an imaging area where a plurality of unit pixels are disposed to capture a color image, wherein each of the unit pixels...
US-9,923,004 Hardware acceleration of computer vision feature detection
Techniques describe apparatus and method for generating local binary pattern (LBP) labels based on sensor readings from sensor elements. The sensor apparatus...
US-9,923,003 CMOS image sensor with a reduced likelihood of an induced electric field in the epitaxial layer
A CMOS time-of-flight image sensor must be robust to interface traps and fixed charges which may be present due to fabrication and which may cause an undesired...
US-9,923,002 Method for manufacturing TFT substrate and structure thereof
A TFT substrate includes a base plate on which first and second gate electrodes respectively corresponding to first and second TFTs are formed. A gate...
US-9,923,001 Semiconductor device and manufacturing method thereof
A highly reliable semiconductor device suitable for miniaturization and high integration is provided. The semiconductor device includes a first transistor, a...
US-9,923,000 Semiconductor device and manufacturing method thereof
The number of manufacturing steps is reduced to provide a semiconductor device with high productivity and low cost. A semiconductor device with low power...
US-9,922,999 Electro-optical device, electronic apparatus
A liquid crystal device which is used as an electro-optical device according to the present embodiment includes at least five capacitance electrodes that are...
US-9,922,998 Display apparatus and method of manufacturing the same
A display apparatus is provided. The display apparatus includes a substrate having a display area and a pad area, an active layer in the display area of the...
US-9,922,997 GOA circuit
Disclosed is a GOA circuit. By locating the thirteenth thin film transistor (T13) coupled with the tenth thin film transistor (T10) in series and controlled by...
US-9,922,996 Array substrate, manufacturing method therefor and display device
An array substrate is provided. The array substrate includes a base substrate, and a buffer layer, a semiconductor layer, a gate insulation layer, a gate metal...
US-9,922,995 Structure of dual gate oxide semiconductor TFT substrate including TFT having top and bottom gates
The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate...
US-9,922,994 Semiconductor device and method for manufacturing the semiconductor device
First to third insulators are successively formed in this order over a first conductor over a semiconductor substrate; a hard mask with a first opening is...
US-9,922,993 Transistor with self-aligned source and drain contacts and method of making same
A transistor includes an active region supported by a substrate and having a source region, a channel region and a drain region. A gate stack extends over the...
US-9,922,992 Doping channels of edge cells to provide uniform programming speed and reduce read disturb
A three-dimensional stacked memory device provides uniform programming speeds for a block of memory cells. The channel layers of the memory strings which are...
US-9,922,991 Semiconductor memory device and method for manufacturing same
A semiconductor memory device includes a stacked body including a first electrode layer and a second electrode layer stacked on the first electrode layer, and...
US-9,922,990 Three dimensional flash memory using electrode layers and/or interlayer insulation layers having different...
Embodiments of the present invention enable threshold voltage distribution of a plurality of electrode layers to be improved by configuring each of the...
US-9,922,989 Memory device having interchangeable gate/channel transistor and manufacturing method of the same
A memory device is provided. The memory device includes a bottom conductive line, a stacked structure, a side oxide layer, a dielectric layer and a side...
US-9,922,988 Embedded SONOS based memory cells
Memory devices and methods for forming the same are disclosed. In one embodiment, the device includes a non-volatile memory (NVM) transistor formed in a first...
US-9,922,987 Three-dimensional memory device containing separately formed drain select transistors and method of making thereof
Memory stack structures can be formed through an alternating stack of insulating layers and spacer material layers that are formed as, or are subsequently...
US-9,922,986 Semiconductor structure including a plurality of pairs of nonvolatile memory cells and an edge cell and method...
A method includes providing a semiconductor structure having a gate structure arrangement provided over a substrate. The gate structure arrangement includes one...
US-9,922,984 Threshold voltage modulation through channel length adjustment
A method of forming an arrangement of long and short fins on a substrate, including forming a plurality of finFET devices having long fins on the substrate,...
US-9,922,983 Threshold voltage modulation through channel length adjustment
A method of forming an arrangement of long and short fins on a substrate, including forming a plurality of finFET devices having long fins on the substrate,...
US-9,922,982 Electric fuse structure
An electric fuse structure is disclosed. The electric fuse preferably includes a substrate and a stacked capacitor on the substrate. Preferably, the stacked...
US-9,922,981 Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making
An integrated circuit including a link or string of semiconductor memory cells, wherein each memory cell includes a floating body region for storing data. The...
US-9,922,980 Method and device for reducing FinFET self-heating effect
A method of manufacturing a semiconductor device includes providing a semiconductor substrate, forming a diamond film on the substrate, etching the diamond film...
US-9,922,979 Integrated circuit device and method of manufacturing the same
An integrated circuit (IC) device includes a fin-type active region formed in a substrate, a step insulation layer on at least one sidewall of the fin-type...
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