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Patent # Description
US-9,947,840 Light emitting device and light source
A light emitting device includes at least one light emitting element to emit a first light having a first peak emission wavelength in a range of 420 nm to 480...
US-9,947,839 LED assembly
This disclosure discloses an LED assembly. The LED assembly includes a transparent mount with a top surface and a bottom surface opposite to the top surface, an...
US-9,947,838 Method of producing a multicolor LED display
A method produces a multicolor LED display, the display including an LED luminous unit having a multiplicity of pixels. First subpixels, second subpixel and...
US-9,947,836 Electronic device mounting substrate and electronic apparatus
An electronic device mounting substrate includes: a first wiring substrate shaped in a rectangular frame, an interior of the rectangular frame constituting a...
US-9,947,835 Light-emitting element and light-emitting package comprising same
A light emitting device includes a substrate; a plurality of light emitting cells disposed on the substrate to be spaced apart from one another, the light...
US-9,947,834 Light emitting element and light emitting element package
A light emitting element includes: a substrate; a first conductive type semiconductor layer stacked on the substrate; a light emitting layer stacked on the...
US-9,947,833 Semiconductor light-emitting element and semiconductor light-emitting device
A semiconductor light-emitting element comprises: a semiconductor structure layer including a first semiconductor layer having a first conductivity type, a...
US-9,947,832 Light-emitting device
A light-emitting device includes a semiconductor layered structure; an upper electrode disposed on a portion of an upper surface of the semiconductor layered...
US-9,947,831 Light emitting diode device having III-nitride nanowires, a shell layer and a continuous layer
A light emitting diode (LED) includes a plurality of Group III-nitride nanowires extending from a substrate, at least one Group III-nitride pyramidal shell...
US-9,947,830 Patterned sapphire substrate and light emitting diode
A patterned sapphire substrate has a first surface and a second surface opposite to each other; the connection zone between first protrusion portions has no C...
US-9,947,829 Substrate with buffer layer for oriented nanowire growth
The present invention provides a substrate (1) with a bulk layer (3) and a buffer layer (4) having a thickness of less than 2 .mu.m arranged on the bulk layer...
US-9,947,828 Quantum dot light-emitting device
A quantum dot light-emitting device includes: a first electrode; a second electrode opposite to the first electrode; an emission layer between the first...
US-9,947,827 Front-side emitting mid-infrared light emitting diode
A device emitting mid-infrared light that comprises a semiconductor substrate of GaSb or closely related material. The device can also comprise epitaxial...
US-9,947,825 Method of manufacturing solar cell
Disclosed is a manufacturing method of a solar cell, including forming a photoelectric converter including an amorphous semiconductor layer, forming an...
US-9,947,824 Solar cell employing nanocrystalline superlattice material and amorphous structure and method of constructing...
A solar cell employing nanocrystalline superlattice material and amorphous structure and method of constructing the same provides improved efficiency when...
US-9,947,823 Group-IV solar cell structure using group-IV or III-V heterostructures
Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a...
US-9,947,822 Bifacial photovoltaic module using heterojunction solar cells
One embodiment of the present invention provides a bifacial solar panel. The bifacial solar panel includes a first transparent cover on a first side of the...
US-9,947,821 High concentration doping in silicon
A silicon device, has a plurality of crystalline silicon regions. One crystalline silicon region is a doped crystalline silicon region. Deactivating some or all...
US-9,947,820 Shingled solar cell panel employing hidden taps
A high efficiency configuration for a solar cell module comprises solar cells arranged in a shingled manner to form super cells, which may be arranged to...
US-9,947,819 Solar cell module and method of fabricating the same
Disclosed are a solar cell module and a method of fabricating the same. The solar cell module includes a support substrate including a lateral side, at which a...
US-9,947,818 Solar cell module
A solar cell module includes a solar cell panel including a plurality of solar cells sealed between a front surface member and a back surface member with a...
US-9,947,817 Three-dimensional photovoltaic devices including non-conductive cores and methods of manufacture
Various stamping methods may reduce defects and increase throughput for manufacturing metamaterial devices. Metamaterial devices with an array of photovoltaic...
US-9,947,816 Semiconductor structures for fuel generation
This disclosure relates to photovoltaic and photoelectrosynthetic cells, devices, methods of making and using the same.
US-9,947,815 Thin film plasmonic solar cell
A plasmonic scattering nanomaterial comprising a substrate layer, a metal oxide layer in continuous contact with the substrate layer and silver nanoparticles...
US-9,947,814 Semiconductor optical sensor
A semiconductor optical sensor includes a plurality of sensing units and to senses an incident optical signal to generate an electrical signal. One of the...
US-9,947,813 System and method for illuminating a sample and collecting light reflected from the sample
A scanning system can include an illuminator, configured to produce an illuminating beam, and a fixation unit, configured to mechanically support a sample to be...
US-9,947,812 Metallization of solar cells
Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves...
US-9,947,811 Solar cell and method for manufacturing the same, and solar cell module
A solar cell module includes a plurality of solar cells comprising a first solar cell and a second solar cell adjacent to each other; a conductive ribbon,...
US-9,947,810 Solar cell and solar cell panel including the same
Disclosed is a solar cell including a semiconductor substrate, a first conductive area formed on one surface of the semiconductor substrate, a second conductive...
US-9,947,809 Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste
A conductive paste includes a conductive powder, a metallic glass having a glass transition temperature of less than or equal to about 600.degree. C. and a...
US-9,947,808 CIGS compound solar cell
In order to provide a CIGS compound solar cell with a high conversion efficiency, a CIGS compound solar cell including a rear electrode layer, a CIGS light...
US-9,947,807 Solar module with wireless power transfer
A solar module includes a solar panel and a wireless power transmission module coupled to the solar panel for transmitting power generated by the solar panel...
US-9,947,806 Semiconductor device
A Schottky barrier diode (semiconductor device) includes at least: a semiconductor substrate of an N type (first conductivity type); a semiconductor portion...
US-9,947,805 Nanowire-based mechanical switching device
Nanowire-based mechanical switching devices are described. For example, a nanowire relay includes a nanowire disposed in a void disposed above a substrate. The...
US-9,947,804 Methods of forming nanosheet transistor with dielectric isolation of source-drain regions and related structure
An IC structure according to the disclosure includes: a substrate; a pair of transistor sites positioned on the substrate, wherein an upper surface of the...
US-9,947,803 Amorphous oxide and thin film transistor
The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an...
US-9,947,802 Manufacturing method of semiconductor device, manufacturing method of electronic appliance, semiconductor...
A semiconductor device is manufactured by forming an oxide layer, forming an insulating layer and a sacrificial layer over the oxide layer, forming a conductive...
US-9,947,801 Transistor and semiconductor device
A transistor with small parasitic capacitance can be provided. A transistor with high frequency characteristics can be provided. A semiconductor device...
US-9,947,800 Transistor, method for manufacturing transistor, semiconductor device, and electronic device
A transistor with favorable electrical characteristics, a transistor with stable electrical characteristics, or a highly integrated semiconductor device is...
US-9,947,799 Semiconductor device
An object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. In a transistor...
US-9,947,798 Display device
According to one embodiment, a display device includes thin-film transistor. The thin-film transistor includes a first semiconductor layer, a first insulating...
US-9,947,797 Semiconductor device and method for manufacturing the same
Homogeneity and stability of electric characteristics of a thin film transistor included in a circuit are critical for the performance of a display device...
US-9,947,796 Oxide thin film transistor and manufacturing method thereof, array substrate and display device
The present invention provides an oxide thin film transistor and a manufacturing method thereof, an array substrate and a display device. The oxide thin film...
US-9,947,795 Thin-film transistor
According to one embodiment, a thin-film transistor includes a first insulating film, an oxide semiconductor layer provided on the first insulating film and a...
US-9,947,794 Semiconductor device and method for manufacturing the same
A semiconductor device that operates at high speed. A semiconductor device with favorable switching characteristics. A highly integrated semiconductor device. A...
US-9,947,793 Vertical pillar-type field effect transistor and method
Disclosed is a method of forming a vertical pillar-type field effect transistor (FET). One or more semiconductor pillars are formed by epitaxial deposition in...
US-9,947,792 Semiconductor device and method for fabricating the same
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first fin-shaped structure thereon;...
US-9,947,791 FinFET with merge-free fins
A semiconductor device comprises an insulation layer, an active semiconductor layer formed on an upper surface of the insulation layer, and a plurality of fins...
US-9,947,790 Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and...
A semiconductor device including a channel region formed in a semiconductor substrate; a source region formed on one side of the channel region; a drain region...
US-9,947,789 Vertical transistors stressed from various directions
A vertical transistor includes a semiconductor substrate, and fin(s) over the semiconductor substrate (n-type fin(s) and/or p-type fin(s)), the fin(s) acting as...
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