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Patent # Description
US-9,954,035 Organic light emitting diode with a plurality composite electrode having different thicknesses
An organic light-emitting diode (OLED) array substrate, a display device and a manufacturing method thereof are disclosed. The array substrate includes: a...
US-9,954,034 Image sensor, method for manufacturing the same, and image processing device having the image sensor
An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2.times.2...
US-9,954,033 Bonding P-type and N-type sheets to form complementary circuits
A method for fabricating at least a portion of a complementary circuit, such as a complementary inverter circuit, includes fabricating a first sheet and a...
US-9,954,032 Method for producing a pillar-shaped phase change memory device
A method for producing a memory device and semiconductor device includes forming pillar-shaped phase change layers and lower electrodes in two or more rows and...
US-9,954,031 Semiconductor device structure useful for bulk transistor and method of manufacturing same where a substrate...
A semiconductor device including a semiconductor substrate with a first surface and a second surface facing each other, the semiconductor substrate having an...
US-9,954,030 Semiconductor apparatus including magnetoresistive device
A semiconductor apparatus includes a substrate, a first insulating layer on a logic region and a memory region of the substrate, a second insulating layer on...
US-9,954,029 Resistance change memory
According to one embodiment, a resistance change memory includes a semiconductor layer having a first surface in a first direction and a second surface in a...
US-9,954,028 Light emitting device package and display device using the same
A light emitting device package includes a substrate for growth having a plurality of light-emitting windows, a plurality of semiconductor light-emitting units...
US-9,954,027 Image pickup device and manufacturing method for image pickup device by stacking/bonding of crystalline silicon...
A semiconductor device having a stacked structure formed by stacking a thinned first silicon substrate and a second silicon substrate supporting the first...
US-9,954,026 Imaging apparatus and imaging system
An imaging apparatus includes a pixel configured to generate a signal in accordance with an incident light by a photoelectric conversion; a differential...
US-9,954,025 Pixel having two semiconductor layers, image sensor including the pixel, and image processing system including...
An image sensor having pixels that include two patterned semiconductor layers. The top patterned semiconductor layer contains the photoelectric elements of...
US-9,954,024 Semiconductor device, solid-state image sensor and camera system
The present invention relates to a semiconductor device, a solid-state image sensor and a camera system capable of reducing the influence of noise at a...
US-9,954,023 Solid-state imaging device and imaging apparatus
A solid-state imaging device includes a first substrate and a second substrate electrically connected to the first substrate. The first substrate includes a...
US-9,954,022 Extra doped region for back-side deep trench isolation
The present disclosure relates to a CMOS image sensor having a doped region, arranged between deep trench isolation structures and an image sensing element, and...
US-9,954,021 Solid-state imaging device, method for manufacturing the same, and imaging apparatus
Realization of an adequate hole accumulation layer and reduction in dark current are allowed to become mutually compatible. A solid-state imaging device 1...
US-9,954,020 High-dynamic-range color image sensors and associated methods
A high-dynamic-range color image sensor includes (a) a silicon substrate having a photosensitive pixel array with a plurality of first pixels and a plurality of...
US-9,954,019 Complementary metal-oxide-semiconductor image sensors
A complementary metal-oxide-semiconductor (CMOS) image sensor is provided. The CMOS image sensor may include an epitaxial layer having a first conductivity type...
US-9,954,018 Solid-state image pickup unit and electronic apparatus
A solid-state image pickup unit includes: a substrate made of a first semiconductor; a substrate made of a first semiconductor; a photoelectric conversion...
US-9,954,017 Radiation image-pickup device and radiation image-pickup display system
A radiation image-pickup device includes: a plurality of pixels configured to generate signal charge based on radiation; a first substrate including a...
US-9,954,016 Germanium-silicon light sensing apparatus
An image sensor array including a carrier substrate; a first group of photodiodes coupled to the carrier substrate, where the first group of photodiodes include...
US-9,954,015 Method of manufacturing thin film transistor array substrate
The present invention relates to a thin film transistor array substrate and a method of manufacturing the same. The thin film transistor array substrate may...
US-9,954,014 Thin film transistor substrate and display using the same
A thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same are discussed. The thin...
US-9,954,013 Display device and method of manufacturing the same
This invention aims at reducing the probability of short-circuiting between terminals in a display device in which an IC driver is connected by COG. Terminals...
US-9,954,012 Display device
A display device is disclosed and includes an array substrate and a color filter substrate. The color filter substrate includes a display region, a peripheral...
US-9,954,011 Display device
Provided is a display device with high resolution, high display quality, or high aperture ratio. A pixel includes three subpixels and is electrically connected...
US-9,954,010 Liquid crystal display device and electronic device
To provide a circuit used for a shift register or the like. The basic configuration includes first to fourth transistors and four wirings. The power supply...
US-9,954,009 Display device
A display device is disclosed. In one aspect, the display device includes a first wire disposed in the inactive area of the substrate, a first pad overlapping...
US-9,954,008 Liquid crystal cell panel including substrates having corner patterns
A liquid crystal cell panel includes a first substrate from which is formed a thin film transistor array substrate, the first substrate including a plurality of...
US-9,954,007 Transistor and display device
It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a...
US-9,954,006 Thin film transistor array substrate and method of manufacturing the same
A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping...
US-9,954,005 Semiconductor device comprising oxide semiconductor layer
A semiconductor device includes a pixel portion having a first thin film transistor and a driver circuit having a second thin film transistor. Each of the first...
US-9,954,004 Semiconductor device
The degree of integration of a semiconductor device is enhanced and the storage capacity per unit area is increased. The semiconductor device includes a first...
US-9,954,003 Semiconductor device and electronic device
A semiconductor device with high design flexibility is provided. A first transistor and a second transistor having electrical characteristics different from...
US-9,954,002 Multi-gate field effect transistor (FET) including isolated FIN body
Aspects of the disclosure provide a multi-gate field effect transistor (FET) formed on a bulk substrate that includes an isolated fin and methods of forming the...
US-9,954,001 Structure for interconnect parasitic extraction
A structure for extracting interconnect parasitic in a ring oscillator is disclosed. The ring oscillator comprises multiple logical units connected in head to...
US-9,954,000 Multi-level ferroelectric memory device and method of manufacturing the same
A ferroelectric memory device may include a semiconductor substrate, a plurality of ferroelectric layers, a source, a drain and a gate. The semiconductor...
US-9,953,999 Memory device
In one embodiment, the semiconductor device includes a stack of alternating first interlayer insulating layers and gate electrode layers on a substrate. At...
US-9,953,998 Semiconductor memory device and method for manufacturing same
A method for manufacturing a semiconductor memory device includes forming a first insulating layer on a conductive layer; forming a second insulating layer on...
US-9,953,997 Three-dimensional semiconductor memory devices
Disclosed is a semiconductor memory device including stacks on a substrate, a vertical channel portion connected to the substrate through each of the stacks,...
US-9,953,996 Semiconductor memory device
According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, a semiconductor pillar, and a charge storage film. The stacked...
US-9,953,995 Independent vertical-gate 3-D NAND memory circuit
A memory array provided on a semiconductor substrate includes: (a) channel structures arranged in multiple layers above the semiconductor substrate, each...
US-9,953,994 Semiconductor memory device and structure
A semiconductor device, including: a plurality of non-volatile memory cells including a first memory cell and a second memory cell, where the plurality of...
US-9,953,993 Semiconductor memory device
A semiconductor memory device includes a plurality of word lines stacked in a first direction; a semiconductor pillar extending through the plurality of word...
US-9,953,992 Mid-plane word line switch connection for CMOS under three-dimensional memory device and method of making thereof
A three-dimensional memory array device can include mid-plane terrace regions between a pair of memory array regions. The electrically conductive layers of the...
US-9,953,991 EPROM cell with modified floating gate
An electronically programmable read-only memory (EPROM) cell includes a semiconductor substrate having source and drain regions; a floating gate, adjacent to...
US-9,953,990 One-time programmable memory using rupturing of gate insulation
Embodiments relate to an anti-fuse device with a transistor. The transistor may be a FinFET. The anti-fuse device includes a first electrode, an insulating...
US-9,953,989 Antifuse array and method of forming antifuse using anodic oxidation
A method for forming an antifuse on a substrate is provided, which comprises: forming a first conductive material on the substrate; placing the first conductive...
US-9,953,988 Method of forming static random-access memory (SRAM) cell array
A static random-access memory (SRAM) cell array forming method includes the following steps. A plurality of fin structures are formed on a substrate, wherein...
US-9,953,987 Semiconductor device
A semiconductor device, including: a semiconductor substrate having a first well region; an insulating layer formed on a first portion of the semiconductor...
US-9,953,986 Method and apparatus for improving read margin for an SRAM bit-cell
Described is a 6T SRAM cell which comprises: a first n-type transistor with a gate terminal coupled to word-line, source/drain terminal coupled to a first...
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