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Patent # Description
US-9,972,749 Semiconductor light-emitting element
A semiconductor light-emitting element according to the present invention includes a first semiconductor layer of a first conductivity type, a light-emitting...
US-9,972,748 Thin-film semiconductor body with electronmagnetic radiation outcoupling structures
A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted...
US-9,972,747 Coated semiconductor nanocrystals and products including same
A coated quantum dot is provided wherein the quantum dot is characterized by having a solid state photoluminescence external quantum efficiency at a temperature...
US-9,972,746 Substrate with lithium imide layer, LED with lithium imide layer and manufacturing method thereof
A substrate with a lithium imide layer, a LED with a lithium imide layer and a manufacturing method of the LED are provided. The substrate includes a lithium...
US-9,972,745 Group III nitride semiconductor light-emitting device
The present invention provides a Group III nitride semiconductor light-emitting device in which electrons and holes are suppressed from being captured by...
US-9,972,744 Light emitting diode and display device including the same
A light emitting element includes a first electrode, a second electrode overlapping the first electrode, and an emission layer between the first electrode and...
US-9,972,743 Methods of producing photoelectric devices
A photovoltaic device includes an intrinsic layer having two or more sublayers. The sublayers are intentionally deposited to include complementary concave and...
US-9,972,742 Method for forming a transparent conductive film with metal nanowires having high linearity
Metal nanowires with high linearity can be produced using metal salts at a relatively low temperature. A transparent conductive film can be formed using the...
US-9,972,741 Methods of forming thin-film photovoltaic devices with discontinuous passivation layers
In various embodiments, photovoltaic devices incorporate discontinuous passivation layers (i) disposed between a thin-film absorber layer and a partner layer,...
US-9,972,740 Chemical vapor deposition tool and process for fabrication of photovoltaic structures
One embodiment of the present invention can provide a system for fabricating a photovoltaic structure. During fabrication, the system can deposit a first...
US-9,972,739 Light detection device
A method of forming a light detection device includes forming a non-porous layer on a substrate, forming a light absorption layer on the non-porous layer, the...
US-9,972,738 Solar cell and method for manufacturing the same
A solar cell and a method for manufacturing the same are discussed. The solar cell may include a substrate, an emitter layer positioned at a first surface of...
US-9,972,737 Manufacturing semiconductor-based multi-junction photovoltaic devices
Manufacture of multi junction solar cells, and devices thereof, are disclosed. The architectures are also adapted to provide for a more uniform and consistent...
US-9,972,736 Spreading devices into a 2-D module layout
An apparatus, method, and system, the apparatus including a receiving member dimensioned to receive an array of microelectronic devices; and a linkage member...
US-9,972,735 Optocoupler having a semiconductor diode for each voltage source and a tunnel diode formed between each two...
An optocoupler having a transmitter module and a receiver module that are galvanically isolated from each other and optically coupled with one another and are...
US-9,972,734 Photovoltaic modules comprising light directing mediums and methods of making the same
The present disclosure generally relates to photovoltaic modules and methods of making photovoltaic modules. One exemplary photovoltaic module includes a...
US-9,972,733 Monolithic interconnection for solar cells
A method for fabricating a solar cell includes providing a first substrate with at least one protruding element on the first substrate. The method removes a...
US-9,972,732 Method for manufacturing solar cells having nano-micro composite structure on silicon substrate and solar cells...
One embodiment of the present invention relates to a method for manufacturing solar cells having a nano-micro composite structure on a silicon substrate and...
US-9,972,731 Precursor for preparing light absorption layer of solar cells and method of preparing the same
Disclosed are a precursor for preparing a light absorption layer of a solar cell including (a) an aggregate-phase composite including a first phase including a...
US-9,972,730 Method of making a sensor package with cooling feature
A sensor device includes a first substrate of semiconductor material having opposing first and second surfaces, photodetectors configured to receive light...
US-9,972,729 Photodiode and photodiode array
A p.sup.- type semiconductor substrate 20 has a first principal surface 20a and a second principal surface 20b opposed to each other and includes a...
US-9,972,728 Solar cell, solar cell module, and method for manufacturing solar cell
A solar cell module includes an encapsulating member and a sealing layer for sealing a solar cell, and further includes a solar cell having a transparent...
US-9,972,727 Bispectral matrix sensor and method for manufacturing the same
The present invention relates to a method for manufacturing a bispectral matrix detector comprising the following steps: providing a monotype matrix detector;...
US-9,972,726 Photovoltaic apparatus
A photovoltaic apparatus includes a solar cell panel including a plurality of solar cells, a junction part connected to the solar cell panel, a first wiring...
US-9,972,725 Semiconductor device and manufacturing method of the same
There is provided a semiconductor device configured to include a plurality of semiconductor units formed in a semiconductor layer. Each of the semiconductor...
US-9,972,724 Acceleration sensor and mounting structure of acceleration sensor
An acceleration sensor includes: a semiconductor substrate that includes a support substrate and a semiconductor layer; a first-direction movable electrode; a...
US-9,972,723 Piezoelectric thin-film based flexible sensing device, method for fabrication thereof and method for operating...
A sensing device, a method for fabrication thereof, and a method for operating the same are disclosed. The sensing device includes a flexible substrate, a first...
US-9,972,722 Method for producing semiconductor device and semiconductor device
A method for producing a semiconductor device includes a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate and forming a first...
US-9,972,721 Thick FDSOI source-drain improvement
A method of forming a semiconductor device is disclosed including providing a semiconductor-on-insulator substrate comprising a semiconductor bulk substrate, a...
US-9,972,720 Semiconductor device having a planar insulating layer
A semiconductor device includes a substrate. A planar insulating layer is disposed on an upper surface of the substrate. A channel region is disposed above the...
US-9,972,719 Laminate structure of thin film transistor
A laminate structure of a thin film transistor includes a thin film transistor array and a passivation layer. The thin film transistor array includes a gate, a...
US-9,972,718 Semiconductor device and method for manufacturing the same
A semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, a multilayer film...
US-9,972,717 Semiconductor device and method of fabricating the same
A semiconductor device and a method of fabricating the same are provided. The semiconductor device comprises a first multi-channel active pattern which is...
US-9,972,716 Semiconductor devices
Provided are semiconductor devices that include an active pattern on a substrate, first and second gate electrodes on the active pattern and arranged in a first...
US-9,972,715 Semiconductor device and semiconductor device manufacturing method
To more easily form a structure that mitigates the electrical field focus at the bottom portion of the trench gate and prevents decreases and variations in the...
US-9,972,714 Semiconductor device with a termination mesa between a termination structure and a cell field of field...
A semiconductor device includes a cell field with a plurality of field electrode structures and cell mesas. The field electrode structures are arranged in...
US-9,972,713 Semiconductor device and method of manufacturing same
To provide a semiconductor device including a power semiconductor element having improved reliability. The semiconductor device has a cell region and a...
US-9,972,712 Semiconductor device
A semiconductor device according to an embodiment includes a conductive region including titanium (Ti), oxygen (O), at least one first element from zirconium...
US-9,972,711 Reduced resistance short-channel InGaAs planar MOSFET
A metal-oxide-semiconductor field effect transistor (MOSFET) and a method of fabricating a MOSFET are described. The method includes depositing and patterning a...
US-9,972,710 Field effect transistor
A field effect transistor includes a semiconductor stack including a channel provided on a border between a first nitride semiconductor and a second nitride...
US-9,972,709 Semiconductor device fabrication
There is provided a method for fabricating a semiconductor device having the following structure, and comprising the steps of growing a first and a second...
US-9,972,708 Double heterojunction field effect transistor with polarization compensated layer
A semiconductor device includes a substrate, a relaxation layer, a channel layer, a polarization compensation layer, and a barrier layer. The relaxation layer...
US-9,972,707 Semiconductor device
A semiconductor device includes a main IGBT region in which an IGBT is provided, a main diode region in which a diode is provided, a sense IGBT region in which...
US-9,972,705 Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device includes preparing a wafer that includes semiconductor elements, placing the wafer on a stage so that a second...
US-9,972,704 Method for forming a semiconductor device and a semiconductor device
A method for forming a semiconductor device comprises implanting a defined dose of protons into a semiconductor substrate and tempering the semiconductor...
US-9,972,703 Transistor with charge enhanced field plate structure and method
Transistors and methods of fabricating are described herein. These transistors include a field plate (108) and a charged dielectric layer (106) overlapping at...
US-9,972,702 Method for non-resist nanolithography
A method for forming a semiconductor device is provided. A first patterned mask is formed on the substrate, the first patterned mask having a first opening...
US-9,972,701 Semiconductor device
A semiconductor device includes a fin-type active area, nanosheets, a gate, a source/drain region, and insulating spacers. The fin-type active area protrudes...
US-9,972,700 Vertical field effect transistors with bottom source/drain epitaxy
A vertical fin field-effect-transistor and a method for fabricating the same. The vertical fin field-effect-transistor includes a substrate, a first...
US-9,972,699 Fabricating large area multi-tier nanostructures
Methods for fabricating and replicating self-aligned multi-tier nanoscale structures for a variety of cross-sectional geometries. These methods can utilize a...
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