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Patent # Description
US-9,972,698 Fabricating large area multi-tier nanostructures
Methods for fabricating and replicating self-aligned multi-tier nanoscale structures for a variety of cross-sectional geometries. These methods can utilize a...
US-9,972,697 Method to improve reliability of replacement gate device
A method of fabricating a replacement gate stack for a semiconductor device includes the following steps after removal of a dummy gate: growing a high-k...
US-9,972,696 Etching method and method of fabricating a semiconductor device using the same
The present disclosure relates to an etchant, a method of making an etchant, an etching method and a method of fabricating a semiconductor device using the...
US-9,972,695 Binary metal oxide based interlayer for high mobility channels
A method of forming a gate stack that includes treating a semiconductor substrate with a wet etch chemistry to clean a surface of the semiconductor substrate...
US-9,972,694 Atomic layer deposition methods and structures thereof
A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a...
US-9,972,693 Display device
A display device is disclosed. In one aspect, the device includes a substrate and a display unit disposed on the substrate and including a plurality of pixels...
US-9,972,692 Integrated circuit device and method of manufacturing the same
An integrated circuit device includes a source/drain region having a recess in its top, a contact plug extending on the source/drain region from within the...
US-9,972,691 Semiconductor device with multi-finger structure
A semiconductor device includes: diffusion layers that are formed over a semiconductor substrate in a first direction, that are separated from one another by...
US-9,972,690 Method for producing a dielectric field plate in a substrate trench, a corresponding substrate, and a power...
A substrate includes a trench with walls and a base. The substrate also includes a dielectric field plate. The dielectric field plate consists of at least one...
US-9,972,689 Semiconductor device having a surface with ripples
According to one embodiment of a semiconductor device, the semiconductor device includes a semiconductor substrate having a first surface, an insulation layer...
US-9,972,688 Post growth defect reduction for heteroepitaxial materials
A method of reducing defects in epitaxially grown III-V semiconductor material comprising: epitaxially growing a III-V semiconductor on a substrate; patterning...
US-9,972,687 High quality vanadium dioxide films
Layers of high quality VO.sub.2 and methods of fabricating the layers of VO.sub.2 are provided. The layers are composed of a plurality of connected crystalline...
US-9,972,686 Germanium tin channel transistors
Techniques related to transistors and integrated circuits having germanium tin, systems incorporating such transistors, and methods for forming them are...
US-9,972,685 Vertical semiconductor devices including superlattice punch through stop layer and related methods
A semiconductor device may include a substrate, and a plurality of fins spaced apart on the substrate. Each of the fins may include a lower semiconductor fin...
US-9,972,684 Compressive strain semiconductor substrates
A method for forming a compressively strained semiconductor substrate includes forming a lattice adjustment layer on a semiconductor substrate by forming...
US-9,972,683 Semiconductor device and method of fabricating the same
A method of fabricating a semiconductor device is provided as follows. A strain relaxed buffer (SRB) layer is formed on a substrate. The SRB layer is formed of...
US-9,972,682 Low resistance source drain contact formation
Techniques for forming Ga-doped source drain contacts in Ge-based transistors are provided. In one aspect, a method for forming Ga-doped source and drain...
US-9,972,681 High voltage vertical semiconductor device with multiple pillars in a racetrack arrangement
A semiconductor device including a dummy pillar and a plurality of racetrack pillars. The dummy pillar of semiconductor material extends in a first lateral...
US-9,972,680 Food and beverage compositions infused with lipophilic active agents and methods of use thereof
Aspects described herein relate to food and beverage compositions infused with lipophilic active agents and methods of use for the treatment of a variety of...
US-9,972,679 Semiconductor device
To provide a semiconductor device having improved performances. A semiconductor substrate has, in the surface layer portion thereof, an n.sup.+ type...
US-9,972,678 Semiconductor device and method of forming the same
A method of forming a semiconductor device is provided including the following steps. A substrate having a first voltage area and a second voltage area is...
US-9,972,677 Methods of forming power semiconductor devices having superjunction structures with pillars having implanted...
Methods of forming a power semiconductor device are provided in which a semiconductor drift layer that is doped with impurities having a first conductivity type...
US-9,972,676 Silicon carbide semiconductor device
A silicon carbide semiconductor device includes: a drift layer of a first conductivity type made of silicon carbide; a well region of a second conductivity type...
US-9,972,675 Power semiconductor device and method therefor
An RC-IGBT according to the invention includes a high electric field cell formed in a region surrounded by an IGBT cell or in a region surrounded by a diode...
US-9,972,674 Schottky barrier diode and manufacturing method thereof
A technique stabilizing properties of SBDs is provided. An SBD is provided with a p-type contact region in contact with an anode electrode, and an n-type drift...
US-9,972,672 Tunable resistor with curved resistor elements
A resistor structure is provided that contains curved resistor elements. The resistor structure is embedded within an interconnect dielectric material and the...
US-9,972,671 Metal resistors having varying resistivity
A semiconductor structure is provided that includes a first metal resistor structure located on a portion of a dielectric-containing substrate. The first metal...
US-9,972,670 Display device
In a display device having driving circuits formed on the same substrate where pixels are formed, the lateral frame area of the display device is reduced. A...
US-9,972,669 Display device with heterogeneous pixel array for borderless design
An organic light emitting diode display includes a substrate defining a first pixel portion and one or more second pixel portions. Pixels formed in the first...
US-9,972,668 OLED display device and manufacture method thereof
A method for manufacturing an OLED display device that includes pixel areas is provided. A first and a second substrates are provided. TFTs are arranged on the...
US-9,972,667 Display device
A display device includes a substrate having an insulating surface; a plurality of pixel electrodes on the insulating surface, the plurality of pixel electrodes...
US-9,972,666 Display device
A display device includes a pixel electrode, a pixel isolation insulating film in which an opening through which the pixel electrode is exposed at a bottom is...
US-9,972,665 Organic light emitting diode display panel, fabrication method thereof, and display device
An organic light emitting diode display panel and a fabrication method thereof, a display device are provided, and the method includes: forming an anode layer...
US-9,972,664 Organic electroluminescent display panel
An organic EL display panel including: a substrate; pixel electrodes that are arrayed in a matrix above the substrate; first organic functional layers that are...
US-9,972,663 Organic light emitting display device including driving sub-pixels each overlapping with multiple color sub-pixels
An organic light emitting display device can include a plurality of color sub-pixels including first, second and third color sub-pixels, the first and second...
US-9,972,662 Pixel structure, method for manufacture the same and display panel
A pixel structure, a method for manufacturing the same and a display panel are provided. The pixel structure includes: a substrate, an anode layer, a first...
US-9,972,661 Organic light-emitting display device including thin-film solar cell and method of manufacturing the organic...
An organic light-emitting display device having an integrated thin-film solar cell includes a substrate, a display disposed in a first area on the substrate to...
US-9,972,660 3D phase change memory with high endurance
A plurality of memory cells in a 3D cross-point array with improved endurance is disclosed. Each memory cell, disposed between first and second conductors,...
US-9,972,659 Electronic device and method for fabricating the same
An electronic device may include a semiconductor memory. The semiconductor memory may include a trench formed in a substrate; a gate dielectric layer formed on...
US-9,972,658 Electronic device and method for fabricating the same
A semiconductor device may include: a substrate; a first mold layer formed over the substrate and comprising a plurality of bottom conductive patterns connected...
US-9,972,657 Semiconductor light emitting element
According to one embodiment, a semiconductor light emitting element (110) includes a metal layer (40), a first to a fourth semiconductor layers (10a, 20a, 10b,...
US-9,972,656 Image sensor and method of reading out an image sensor
An image sensor, in particular a CMOS image sensor, for electronic cameras includes a plurality of light-sensitive pixels arranged in rows and columns for...
US-9,972,655 Imaging device and method for driving the same
An imaging device capable of obtaining image data with a small amount of X-ray irradiation is provided. The imaging device obtains an image using X-rays and...
US-9,972,654 Image sensor with heating effect and related methods
An image sensor including a semiconductor layer. A light absorber layer couples with the semiconductor layer at a pixel of the image sensor and absorbs incident...
US-9,972,653 Image sensors employing sensitized semiconductor diodes
In various example embodiments, the inventive subject matter is an image sensor and methods of formation of image sensors. In an embodiment, the image sensor...
US-9,972,652 Photodetector comprising a pinned photodiode that is formed by an optically sensitive layer and a silicon diode
In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an...
US-9,972,651 Spectrum-inspection device
A spectrum-inspection device includes a multi-band pass filter, a filter array, and a sensing layer. The multi-band pass filter allows a first waveband, a...
US-9,972,650 Solid-state imaging apparatus and method for manufacturing the solid-state imaging apparatus having sealing...
A solid-state imaging apparatus includes a first substrate that includes a plurality of photoelectric conversion units, a second substrate that includes at...
US-9,972,649 Nanowire FET imaging system and related techniques
A sensor comprises a substrate; an array of nanowire field effect transistors (NWFETs) formed in said substrate, each of the NWFETs having source, drain and...
US-9,972,648 Electro-optical device and electronic apparatus
An electro-optical device includes a substrate, a transistor over the substrate, a pixel electrode over the transistor, a source line between the transistor and...
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