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Patent # Description
US-9,972,543 Complementary nanowire semiconductor device and fabrication method thereof
Present embodiments provide for a complementary nanowire semiconductor device and fabrication method thereof. The fabrication method comprises providing a...
US-9,972,542 Hybrid-channel nano-sheet FETs
Semiconductor devices and methods of forming the same include forming stacks of alternating layers of first channel material and second channel material in a...
US-9,972,541 Technique for filling high aspect ratio, narrow structures with multiple metal layers and associated configurations
Embodiments of the present disclosure describe techniques for filling a high aspect ratio, narrow structure with multiple metal layers and associated...
US-9,972,540 Semiconductor device having multiple thickness oxides
Method for fabricating semiconductor device comprising: forming a dummy gate on a first nitrided oxide layer and a non-nitrided oxide layer; nitridizing an...
US-9,972,539 Method of fabricating semiconductor device
A semiconductor device and a method of fabricating the same, the semiconductor device includes a substrate, a first gate and a second gate. The first gate is...
US-9,972,538 Methods for fabricating semiconductor device
Methods for fabricating a semiconductor device include forming a composite film, forming a rough pattern on the composite film, forming a smooth pattern by...
US-9,972,537 Methods of forming graphene contacts on source/drain regions of FinFET devices
One illustrative method disclosed herein includes forming a gate structure above a portion of a fin and performing a first epitaxial growth process to form a...
US-9,972,536 Reconfigurable semiconductor device
A reconfigurable device and an analog circuit are formed on a single chip so that the analog circuit can be controlled by the reconfigurable device. A...
US-9,972,535 Method of separating semiconductor dies from a semiconductor substrate, semiconductor substrate assembly and...
Separation grooves are etched from a main surface into a semiconductor substrate. The separation grooves separate chip regions in horizontal directions parallel...
US-9,972,534 Semiconductor devices, through-substrate via structures and methods for forming the same
A semiconductor device includes a through-substrate via structure, a first metal layer, an electronic component over the through-substrate via structure, a...
US-9,972,533 Aligning conductive vias with trenches
A method for forming conductive contacts on a wafer comprises forming a first hardmask, planarizing layer, second hardmask, and a layer of sacrificial mandrel...
US-9,972,532 Interconnect structures for integrated circuits and their formation
An embodiment of an interconnect structure for an integrated circuit may include a first conductor coupled to circuitry, a second conductor, a dielectric...
US-9,972,531 Method of manufacturing a semiconductor device having groove-shaped via-hole
The semiconductor device has insulating films 40, 42 formed over a substrate 10; an interconnection 58 buried in at least a surface side of the insulating films...
US-9,972,530 Method of manufacturing semiconductor device including copper interconnections
Performance of a semiconductor device is improved. In one embodiment, for example, deposition time is increased from 4.6 sec to 6.9 sec. In other words, in one...
US-9,972,529 Method of forming metal interconnection
A method of fabricating a semiconductor device is disclosed. The method includes forming a first conductive feature over a substrate, forming a dielectric layer...
US-9,972,528 Semiconductor devices
A semiconductor device may include a substrate, a first interlayered insulating layer on the substrate having openings, conductive patterns provided in the...
US-9,972,527 Semiconductor device including air spacer
A semiconductor device includes a substrate including a plurality of active areas. A conductive pattern is in contact with an active area. First and second...
US-9,972,526 Method for forming conductive structure in semiconductor structure
A method for manufacturing a semiconductor structure is provided. The method includes forming a mask layer over a substrate, forming a material layer over the...
US-9,972,525 Method for preparing trench isolation structure
A method for preparing a trench isolation structure, which comprises the following steps of: providing a substrate; forming an oxide layer on the substrate;...
US-9,972,524 Method for fabricating a semiconductor device
A method for fabricating a semiconductor device includes receiving a silicon substrate having an isolation feature disposed on the substrate and a well adjacent...
US-9,972,523 Robot and control method of robot
A robot includes robot arm including lower arm, upper arm and hand attached to tip end portion of upper arm such that the hand is rotatable around rotational...
US-9,972,522 Processing apparatus and device manufacturing method
A processing apparatus for processing a substrate chucked by a chuck installed on a stage includes: a conveying unit configured to convey the substrate to the...
US-9,972,521 Method for manufacturing semiconductor device to facilitate peeling of a supporting substrate bonded to a...
A glass substrate is bonded to a front surface of a wafer on which a front surface element structure is formed, with an adhesive layer interposed therebetween....
US-9,972,520 Aluminum nitride electrostatic chuck used in high temperature and high plasma power density semiconductor...
Disclosed is an aluminum nitride electrostatic chuck, comprising: a positioning electrostatic chuck and a carrier structure. The positioning electrostatic chuck...
US-9,972,519 Substrate transporting apparatus and method of operating the same
A substrate transporting apparatus includes a first light emitting sensor emitting a first sensing light in a first direction, a first light receiving sensor...
US-9,972,518 Gas purge device and gas purge method
A gas inlet made of an elastic material is prevented from getting scratched by contact with a nozzle, and adhesion between the gas inlet and the nozzle is...
US-9,972,517 Anomaly detection system and method of manufacturing semiconductor device
According to one embodiment, there is provided an anomaly detection system for a second unit incidental to a first unit that processes a substrate. The anomaly...
US-9,972,516 Exposure device, substrate processing apparatus, exposure method for substrate and substrate processing method
A local transport hand is configured to be movable in a front-and-rear direction between a rear position rearward of a light emitter and a front position...
US-9,972,515 Substrate processing apparatus and substrate processing method
In a substrate processing apparatus, a temperature of an anti-static liquid having electrical resistivity which gradually decreases as a liquid temperature...
US-9,972,514 Apparatus for liquid treatment of wafer shaped articles
An apparatus for treating a wafer-shaped article comprises a spin chuck configured to hold a wafer-shaped article of a predetermined diameter in a position...
US-9,972,513 Device and method for treating a substrate with hydrofluoric and nitric acid
According to the embodiment, a substrate treating device 10 for treating a semiconductor wafer W using an etchant L containing hydrofluoric acid and nitric acid...
US-9,972,512 Liquid processing method, memory medium and liquid processing apparatus
A liquid processing apparatus for liquid-processing a substrate includes a substrate holding device that rotates a substrate in horizontal position, a nozzle...
US-9,972,511 Substrate processing apparatus and methods
Apparatus and methods for processing substrates are disclosed. In some embodiments, a substrate processing system includes: a process chamber defining an...
US-9,972,510 Substrate cleaning apparatus and substrate cleaning method
A substrate cleaning apparatus for cleaning a substrate is provided. The apparatus includes a cleaning bath in which a substrate holder holding a substrate is...
US-9,972,509 Anti-plasma adhesive tape and manufacturing method
An anti-plasma adhesive tape utilized for manufacturing a semiconductor package includes a substrate; and an adhesive layer formed on the substrate, wherein the...
US-9,972,508 Manufacturing method of semiconductor device
The reliability of a semiconductor device is improved. In a manufacturing method of a semiconductor device, when resin enters a ditch formed on a lower surface...
US-9,972,507 Method for encapsulating large-area semiconductor element-mounted base material
Provided is an encapsulation method not causing molding failures such as filling failures and flow marks when collectively encapsulating a large-area silicon...
US-9,972,506 Selective planishing method for making a semiconductor device
In a method for fabricating semiconductor devices a leadframe pattern is formed from a flat tape of base metal. A plurality of additional metal layers is plated...
US-9,972,505 Semiconductor device and its manufacturing method
The present invention makes it possible to improve the reliability of a semiconductor device. The semiconductor device has, over a semiconductor substrate, a...
US-9,972,504 Atomic layer etching of tungsten for enhanced tungsten deposition fill
Methods of depositing tungsten into high aspect ratio features using a dep-etch-dep process integrating various deposition techniques with alternating pulses of...
US-9,972,503 Etching method
A method for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride includes a first step of exposing a target...
US-9,972,502 Systems and methods for performing in-situ deposition of sidewall image transfer spacers
A method of performing a sidewall image transfer (SIT) process includes arranging a substrate within a substrate processing chamber, wherein the substrate...
US-9,972,501 Techniques and systems for continuous-flow plasma enhanced atomic layer deposition (PEALD)
Techniques are disclosed for methods and apparatuses for performing continuous-flow plasma enhanced atomic layer deposition (PEALD). Plasma gas, containing one...
US-9,972,500 Method of manufacturing semiconductor device
The present invention is provided to improve quality or manufacturing throughput of a semiconductor device. A method includes supplying a source gas to a...
US-9,972,499 Method for forming metal-semiconductor alloy using hydrogen plasma
A method of manufacturing a semiconductor device includes providing a semiconductor substrate having a front surface and a back surface; forming a transition...
US-9,972,498 Method of fabricating a gate cap layer
A method of fabricating a gate cap layer includes providing a substrate with an interlayer dielectric disposed thereon, wherein a recess is disposed in the...
US-9,972,497 Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer
A method for adjusting a threshold voltage includes depositing a strained liner on a gate structure to strain a gate dielectric. A threshold voltage of a...
US-9,972,496 Process for manufacturing a power device with a trench-gate structure and corresponding device
An embodiment for realizing a power device with trench-gate structure integrated on a semiconductor substrate, and including etching the semiconductor substrate...
US-9,972,495 Low-K dielectric spacer for a gate cut
Structures including one or more field-effect transistors and methods for forming a structure that includes one or more field-effect transistors. A first...
US-9,972,494 Method and structure to control channel length in vertical FET device
A method of manufacturing a vertical field effect transistor includes an isotropic etch of a gate conductor to recess the gate and define the length of the...
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