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Patent # Description
US-1,006,2811 Light-emitting element and light-emitting element array comprising the same
Embodiments of a light-emitting element and a light-emitting element array comprise: a light-emitting structure which includes a first conductive type...
US-1,006,2810 Light-emitting diode module having light-emitting diode joined through solder paste and light-emitting diode
Described are a light emitting diode and a light emitting diode module. The light emitting diode module includes a printed circuit board and a light emitting...
US-1,006,2809 Light emitting device package, backlight unit, lighting device and its manufacturing method
Disclosed are a light emitting device package, a backlight unit, and a lighting device which are usable for a display or lighting, and a method of manufacturing...
US-1,006,2808 Optoelectronic device with improved reflectivity
The invention concerns an optoelectronic device (40) comprising: a substrate (14); a first layer (42) covering the substrate, the first layer having a thickness...
US-1,006,2807 Method for manufacturing nitride semiconductor template
There is provided a method for manufacturing a nitride semiconductor template, including the steps of: growing and forming a buffer layer to be thicker than a...
US-1,006,2806 Method of producing III nitride semiconductor light-emitting device and III nitride semiconductor...
We propose a method of producing a III nitride semiconductor light-emitting device including a p-type semiconductor layer, in which the p-type semiconductor...
US-1,006,2805 Semiconductor light-emitting element
A semiconductor light-emitting element includes a first semiconductor layer of a first conductivity type; a light-emitting functional layer that includes a...
US-1,006,2804 Method of manufacturing nano-scale LED electrode assembly comprising selective metal ohmic layer
A method of manufacturing a nano-scale LED electrode assembly including a selective metal ohmic layer is disclosed. Specifically, the method can be useful in...
US-1,006,2803 Micro-size devices formed by etch of sacrificial epitaxial layers
Embodiments regard micro-size devices formed by etch of sacrificial epitaxial layers. An embodiment of a method includes forming a plurality of epitaxial layers...
US-1,006,2802 Embedded LED circuit board and method of manufacturing the same
A method of manufacturing an embedded LED circuit board, including the step of: forming a through hole in a circuit substrate, the through hole communicating a...
US-1,006,2801 Method of reducing sodium concentration in a transparent conductive oxide layer of a semiconductor device
A method of making a semiconductor device includes forming a semiconductor material stack having a sodium at an atomic concentration greater than...
US-1,006,2800 Photovoltaic devices and method of making
A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer...
US-1,006,2799 Quantum-dot photoactive-layer and method for manufacture thereof
Provided are a method of manufacturing a quantum-dot photoactive-layer including: alternately depositing an amorphous silicon compound layer and a silicon-rich...
US-1,006,2798 Multiband double junction photodiode and related manufacturing process
A photodiode structure is based on the use of a double junction sensitive to different wavelength bands based on a magnitude of a reverse bias applied to the...
US-1,006,2797 Method of making a IV-VI/Silicon thin-film tandem solar cell
A simple manufacturing method is provided for the fabrication of the IV-VI group of semiconductor films on inexpensive substrates for highly efficient tandem or...
US-1,006,2796 Photovoltaic system, module holder system and reflector
A photovoltaic system has at least two bifacial solar modules, which are respectively held in a module holder, and a reflector. The module holders are...
US-1,006,2795 Sealing sheet for solar cell
A solar cell encapsulant sheet including a resin layer (S) formed of a resin composition containing an olefine-based resin, wherein the storage elastic modulus...
US-1,006,2794 Resonant-cavity infrared photodetectors with fully-depleted absorbers
Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the...
US-1,006,2793 High efficiency quantum well waveguide solar cells and methods for constructing the same
Photon absorption, and thus current generation, is hindered in conventional thin-film solar cell designs, including quantum well structures, by the limited path...
US-1,006,2792 Method of making a CZTS/silicon thin-film tandem solar cell
A method of making a CZTS/inorganic thin-film tandem solar cell including depositing a textured buffer layer on a substrate, depositing a metal-inorganic film...
US-1,006,2791 Self-aligned metal oxide thin film transistor and method of making same
A thin film transistor comprises a substrate, a gate electrode formed on the substrate, an electrically insulating layer covering the gate electrode, a channel...
US-1,006,2790 Semiconductor device and electronic device
To provide a miniaturized transistor having highly stable electrical characteristics. Furthermore, also in a semiconductor device including the transistor, high...
US-1,006,2789 Thin film transistor and operating method thereof
A thin film includes a substrate, a bottom gate, a channel layer, a source and a drain, and a top gate. The bottom gate is disposed on the substrate. The...
US-1,006,2788 Semiconductor on insulator devices containing permanent charge
A lateral SOI device may include a semiconductor channel region connected to a drain region by a drift region. An insulation region on the drift layer is...
US-1,006,2787 FinFET
A FinFET includes a fin structure, a gate, a source-drain region and an inter layer dielectric (ILD). The gate crosses over the fin structure. The source-drain...
US-1,006,2786 Semiconductor device and method for fabricating the same
A semiconductor device includes a first fin-type pattern on a substrate, having a first sidewall and a second sidewall opposed to each other; a first trench...
US-1,006,2785 Fin field-effect transistor (FinFET) with reduced parasitic capacitance
A semiconductor device includes a substrate, a plurality of fins on the substrate, wherein the plurality of fins each include a fin channel region, first...
US-1,006,2784 Self-aligned gate hard mask and method forming same
A method includes forming a metal gate in a first inter-layer dielectric, performing a treatment on the metal gate and the first inter-layer dielectric,...
US-1,006,2783 Silicon germanium fin channel formation
A method for channel formation in a fin transistor includes removing a dummy gate and dielectric from a dummy gate structure to expose a region of an underlying...
US-1,006,2782 Method of manufacturing a semiconductor device with multilayered channel structure
A semiconductor device includes a fin field effect transistor (FinFET). The FinFET includes a channel disposed on a fin, a gate disposed over the channel and a...
US-1,006,2781 MOS devices having epitaxy regions with reduced facets
An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the...
US-1,006,2780 FinFET device
A FinFET device and a method of forming the same are disclosed. In accordance with some embodiments, a FinFET device includes a substrate having at least one...
US-1,006,2779 Semiconductor device and manufacturing method thereof
A method of manufacturing a Fin FET includes forming a fin structure over a substrate. The fin structure includes an upper layer, and part of the upper layer is...
US-1,006,2778 Semiconductor device
A semiconductor device according to the present invention includes: an insulating layer; a semiconductor layer of a first conductive type laminated on the...
US-1,006,2777 Trench gate trench field plate vertical MOSFET
A semiconductor device having a vertical drain extended MOS transistor may be formed by forming deep trench structures to define vertical drift regions of the...
US-1,006,2776 Semiconductor structure and manufacturing method thereof
The present disclosure provides a semiconductor device and a method for manufacturing the same. The semiconductor device comprises a substrate, a first III-V...
US-1,006,2775 GaN-based power electronic device and method for manufacturing the same
A GaN-based power electronic device and a method for manufacturing the same is provided. The GaN-based power electronic device comprising a substrate and an...
US-1,006,2774 Trench-type insulated gate semiconductor device including an emitter trench and an overlapped floating region
A semiconductor device includes a plurality of gate trenches formed in a semiconductor layer; a gate electrode filled via a gate insulating film in the...
US-1,006,2773 Semiconductor device having a transistor and first and second embedded layers
The present invention makes it possible, in a manufacturing process of a semiconductor device, to inhibit: impurities from diffusing from a substrate to a...
US-1,006,2772 Preventing bridge formation between replacement gate and source/drain region through STI structure
A method includes forming at least one fin above a semiconductor substrate. An isolation structure is formed adjacent the fin. A liner layer is formed above the...
US-1,006,2771 Low temperature poly-silicon thin film transistor and method of manufacturing the same
The present disclosure relates to a low temperature poly-silicon thin film transistor and a method of preparing the same. The low temperature poly-silicon thin...
US-1,006,2770 Complementary metal oxide semiconductor field effect transistor, metal oxide semiconductor field effect...
A complementary metal oxide semiconductor field-effect transistor (MOSFET) includes a substrate, a first MOSFET and a second MOSFET. The first MOSFET is...
US-1,006,2769 Methods of fabricating semiconductor devices
A semiconductor device and a method for fabricating the same are disclosed. The semiconductor device comprises: a semiconductor substrate with an active area...
US-1,006,2768 Field-effect transistor (FET) devices employing adjacent asymmetric active gate / dummy gate width layout
Field-Effect Transistor (FET) devices employing an adjacent asymmetric active gate/dummy gate width layout are disclosed. In an exemplary aspect, a FET cell is...
US-1,006,2767 Memory cell and fabrication method thereof
Memory cells and fabrication methods thereof are provided. An exemplary method includes providing a substrate having a well region; forming a select gate...
US-1,006,2766 Hetero-junction schottky diode device
A hetero-junction Schottky diode device includes a buffer layer, at least one channel layer, at least one barrier layer and a Schottky metal layer. The buffer...
US-1,006,2765 Nonvolatile memory device including multiple planes
A nonvolatile memory device includes bit lines arranged in a first direction over a substrate; a memory cell array disposed between the substrate and the bit...
US-1,006,2764 Semiconductor device having void between gate electrode and sidewall spacer and manufacturing method thereof
A semiconductor device includes a substrate, a gate structure, a spacer, a mask layer, and at least one void. The gate structure is disposed on the substrate,...
US-1,006,2763 Method and apparatus for selectively forming nitride caps on metal gate
A sacrificial cap is grown on an upper surface of a conductor. A dielectric spacer is against a side of the conductor. An upper dielectric side spacer is formed...
US-1,006,2762 Semiconductor devices having low contact resistance and low current leakage
The present disclosure is directed to a device and method for reducing the resistance of the middle of the line in a transistor. The transistor has electrical...
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