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Patent # Description
US-1,007,9308 Vertical transistor structure with looped channel
The disclosure provides a vertical FinFET structure, including: a substrate including a first source/drain region; a looped channel region positioned on the...
US-1,007,9307 Semiconductor device and manufacturing method for the same
An object is to provide a method for manufacturing a highly reliable semiconductor device including thin film transistors which have stable electric...
US-1,007,9306 Semiconductor device
An object is to provide a semiconductor device having a structure in which parasitic capacitance between wirings can be efficiently reduced. In a bottom gate...
US-1,007,9305 Semiconductor device and method of fabricating the same
Provided are a semiconductor device and a method of fabricating the same. The device may include an active pattern protruding from a substrate, gate structures...
US-1,007,9304 Silicon germanium fin immune to epitaxy defect
A method for forming a semiconductor structure includes forming at least one fin on a semiconductor substrate. The least one fin includes a semiconducting...
US-1,007,9303 Method to form strained nFET and strained pFET nanowires on a same substrate
A semiconductor is provided that includes an nFET gate structure straddling over a first nanowire stack and a portion of a first SiGe layer having a first Ge...
US-1,007,9302 Silicon germanium fin immune to epitaxy defect
A method for forming a semiconductor structure includes forming at least one fin on a semiconductor substrate. The least one fin includes a semiconducting...
US-1,007,9301 Memory device comprising an electrically floating body transistor and methods of using
A semiconductor memory cell comprising an electrically floating body having two stable states is disclosed. A method of operating the memory cell is disclosed.
US-1,007,9300 Semiconductor circuit element
A semiconductor circuit element includes a first semiconductor device positioned in and above a first active region of a semiconductor substrate and a second...
US-1,007,9299 Self aligned top extension formation for vertical transistors
A method of forming a semiconductor device that includes providing a vertically orientated channel region; and converting a portion of an exposed source/drain...
US-1,007,9298 Semiconductor device and method of manufacturing semiconductor device
A semiconductor device includes on an n-type semiconductor substrate of silicon carbide, an n-type semiconductor layer, a p-type base region, an n-type source...
US-1,007,9297 Compound semiconductor device
A compound semiconductor device includes a compound semiconductor layer, a gate electrode disposed above the compound semiconductor layer, and source and drain...
US-1,007,9296 High electron mobility transistor with indium nitride layer
A semiconductor device includes an indium gallium nitride layer over an active layer. The semiconductor device further includes an annealed region beneath the...
US-1,007,9295 Semiconductor device and method for manufacturing thereof
A method for manufacturing an oxide semiconductor layer, comprising forming an oxide semiconductor layer over an insulating layer so as to be along with a...
US-1,007,9294 Integrated JFET structure with implanted backgate
A semiconductor device contains a JFET with a channel layer having a first conductivity type in a substrate. The JFET has a back gate having a second, opposite,...
US-1,007,9293 Semiconductor device having a gap defined therein
A method includes forming a first spacer structure on a dummy gate of a semiconductor device and forming a sacrificial spacer on the first spacer structure. The...
US-1,007,9292 Fabrication of vertical field effect transistor structure with controlled gate length
A method of forming a gate structure, including forming one or more vertical fins on a substrate; forming a bottom spacer on the substrate surface adjacent to...
US-1,007,9291 Fin-type field effect transistor structure and manufacturing method thereof
A fin-type field effect transistor including a substrate, insulators, a gate stack, a seal spacer, a first offset spacer, and a second offset spacer is...
US-1,007,9290 Semiconductor device having asymmetric spacer structures
A semiconductor device including a semiconductor substrate, agate on the semiconductor substrate, a drain doping region in the semiconductor substrate on a...
US-1,007,9289 Metal gate structure and methods thereof
Provided is a metal gate structure and related methods that include forming a first fin and a second fin on a substrate. In various embodiments, the first fin...
US-1,007,9288 Contact formation on germanium-containing substrates using hydrogenated silicon
A method and structure is provided in which germanium or a germanium tin alloy can be used as a channel material in either planar or non-planar architectures,...
US-1,007,9287 Gate cut device fabrication with extended height gates
Semiconductor devices and methods of forming the same include forming a dummy gate structure across multiple device regions that includes a dummy gate and a...
US-1,007,9286 Transistor with quantum point contact
Methods and apparatus for quantum point contacts. In an arrangement, a quantum point contact device includes at least one well region in a portion of a...
US-1,007,9285 Semiconductor device, power circuit, computer, and method for manufacturing semiconductor device
A semiconductor device according to an embodiment includes a nitride semiconductor layer, an insulating layer provided on the nitride semiconductor layer, a...
US-1,007,9284 Method of manufacturing a semiconductor structure and semiconductor device
A method of manufacturing a structure in a semiconductor body comprises forming a first mask above a first surface of the semiconductor body. The first mask...
US-1,007,9283 Manufacturing method of a transistor
A manufacturing method of a transistor is provided, and the method includes: providing a base; forming a fin-shaped gate on the base; covering the fin-shaped...
US-1,007,9282 Semiconductor device and method of manufacturing the same
A semiconductor device according to an embodiment includes an i-type or a p-type first diamond semiconductor layer, an n-type second diamond semiconductor layer...
US-1,007,9281 Semiconductor devices and methods for forming a semiconductor device
A method for forming a semiconductor device includes incorporating dopants of a first conductivity type into a nearby body region portion of a semiconductor...
US-1,007,9280 Asymmetric FET
After forming a first-side epitaxial semiconductor region and a second-side epitaxial semiconductor region on recessed surfaces of a semiconductor portion that...
US-1,007,9279 FET with local isolation layers on S/D trench sidewalls
A method is provided for fabricating a semiconductor device. The method includes providing a semiconductor substrate having a gate structure; and forming offset...
US-1,007,9278 Bipolar transistor with carbon alloyed contacts
A method for forming a bipolar junction transistor includes forming a collector intrinsic region, an emitter intrinsic region and an intrinsic base region...
US-1,007,9277 Method of fabricating metal-insulator-metal capacitor
A method of fabricating a metal-insulator-metal capacitor includes providing a dielectric layer. The dielectric layer is etched to form a first hole including a...
US-1,007,9276 Organic light emitting display panel comprising pixel repair region
An organic light emitting display panel is provided that comprises a substrate comprising an emission area and a non-emission area; a black matrix disposed on...
US-1,007,9274 Organic light-emitting display apparatus and method of manufacturing the same
An organic light-emitting display apparatus, including a pixel electrode; a pixel definition layer covering at least a portion of an edge of the pixel...
US-1,007,9273 Organic light-emitting display device
An organic light-emitting display device protects a first electrode and reduces any effect due to light leakage from the top or the peripheral side of a bank,...
US-1,007,9272 Substrate assembly and manufacturing method thereof and display device
The present invention provides a substrate assembly comprising: a substrate; electrodes, metal wirings and TFTs formed on the substrate; and banks formed over...
US-1,007,9271 Mask assembly, apparatus, and method of manufacturing display apparatus
Provided are a mask assembly, an apparatus for manufacturing a display apparatus, and method of manufacturing a display apparatus. The mask assembly includes a...
US-1,007,9270 Flexible display device
A display device according to an exemplary embodiment includes a base portion, a first support plate slidably coupled to the base portion, and configured to...
US-1,007,9269 Multi-functional active matrix organic light-emitting diode display
A multi-functional active matrix display comprises a transparent front sheet, a semi-transparent layer of light emissive devices adjacent the rear side of the...
US-1,007,9268 Memory device
A memory device includes a first interconnect extending in a first direction, a first and a second semiconductor members extending in a second direction, a...
US-1,007,9267 Memory device containing wrap gate vertical select transistors and method of making thereof
A gate dielectric layer and a gate electrode layer are formed around semiconductor pillars. The gate electrode layer is patterned to remove top portions that...
US-1,007,9266 Modulation of magnetic properties through implantation and associated structures
Embodiments of the present disclosure describe techniques and configurations associated with modulation of magnetic properties through implantation. In one...
US-1,007,9265 Micro light-emitting diode apparatus and display panel
A display panel including a backplane, a first bonding layer, a plurality of micro light-emitting diodes, a first insulation layer, and a second bonding layer...
US-1,007,9264 Semiconductor devices with integrated thin-film transistor circuitry
Various embodiments include a semiconductor device with thin-film transistor (TFT) circuitry monolithically integrated with other non-TFT functional devices....
US-1,007,9263 Manufacture of a CdHgTe multispectral photodiode array by cadmium diffusion
A method for manufacturing a multi-spectral photodiode array in a Cd.sub.xHg.sub.1-xTe semiconductor layer constituted of pixels, the method including a step of...
US-1,007,9262 Semiconductor photo-detector
A semiconductor device is disclosed, which includes: at least one device layer being a crystallized layer for example including: a superlattice layer and/or a...
US-1,007,9261 Raised electrode to reduce dark current
An image sensor includes a plurality of photodiodes and a floating diffusion disposed in a semiconductor material. The image sensor also includes a plurality of...
US-1,007,9260 Imaging element and method of manufacturing the same
A solid-state image sensor including a substrate having a photoelectric conversion element disposed therein, the photoelectric conversion element converting an...
US-1,007,9259 Image sensor and method for fabricating the same
An image sensor includes a semiconductor substrate, a plurality of photoelectric transducer devices, a dielectric isolating structure and a plurality of...
US-1,007,9258 Optical detector and imaging apparatus
An optical detector includes a sensor device chip including a substrate and a sensor device that is provided at a front face side of the substrate and detects...
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