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Patent # Description
US-1,024,3122 Method of manufacturing light-emitting device
A method of manufacturing a light-emitting device includes providing a resin sheet that includes a lattice-patterned reflective material-containing portion and...
US-1,024,3121 High voltage monolithic LED chip with improved reliability
Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive...
US-1,024,3120 Solid state lighting devices having improved color uniformity and associated methods
Solid state lighting (SSL) devices and methods of manufacturing SSL devices are disclosed herein. In one embodiment, an SSL device comprises a support having a...
US-1,024,3119 Light-emitting device package, display apparatus and lighting apparatus comprising same
A light-emitting device package according to an embodiment comprises lenses arranged in and on a light-emitting device. The lenses comprise an upper surface...
US-1,024,3118 Method for manufacturing light emitting device
A method for manufacturing a light emitting device, includes providing a light emitting element including an electrode-formed surface, a substrate surface...
US-1,024,3117 Method for producing optoelectronic devices and surface-mountable optoelectronic device
A method for producing optoelectronic devices and a surface-mountable optoelectronic device are disclosed. In an embodiment the method includes applying...
US-1,024,3116 LED device
A LED device includes LED chips mounted on a substrate, a first fluorescent layer, a second fluorescent layer and a package housing. The LED chips emit a blue...
US-1,024,3115 Semiconductor component
A semiconductor component has a semiconductor chip that generates an electromagnetic primary radiation having a first peak wavelength, having a first conversion...
US-1,024,3114 Quantum dot based color conversion layer in display devices
Embodiments of a display device including barrier layer coated quantum dots and a method of making the barrier layer coated quantum dots are described. Each of...
US-1,024,3113 Light emitting device
Provided is a light emitting device which includes a light emitting element having a peak emission wavelength in a range of 400 nm to 500 nm, and a fluorescent...
US-1,024,3112 Light emitting device and method for fabricating the same
Embodiments of a light emitting device and a method for fabricating the same are provided. The light emitting device comprises a cavity and one or more light...
US-1,024,3111 Optoelectronic device subassemblies and methods of manufacturing the same
The present disclosure describes wafer-level processes for fabricating optoelectronic device subassemblies that can be mounted, for example, to a circuit...
US-1,024,3110 Optoelectronic device and method for the production of an optoelectronic device
The invention relates to an optoelectronic device (1) comprising at least one outer surface (2) containing silicone (20), chemical compounds, comprising an...
US-1,024,3109 Light-emitting diode with improved light extraction efficiency
According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an...
US-1,024,3108 Light emitting diode having continuous electrode structure
A present invention includes a negative electrode, a substrate, an adhesive layer, an insulation layer and a reflective layer sequentially stacked. A P-type...
US-1,024,3107 Light emitting device and method for manufacturing thereof
A light emitting device includes a resin molding, first and second leads, and a light emitting element. The resin molding includes a front surface defining an...
US-1,024,3106 Light emitting device and method for manufacturing the same
A light emitting device includes a substrate, a light emitting element, a plurality of bumps and a cover member. The bumps are disposed between the substrate...
US-1,024,3105 Group-III nitride devices and systems on IBAD-textured substrates
A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured...
US-1,024,3104 Nanowire device having graphene top and bottom electrodes and method of making such a device
A composition of matter comprising a plurality of nanowires on a substrate, said nanowires having been grown epitaxially on said substrate in the presence of a...
US-1,024,3103 Ultraviolet light emitting diode, light emitting diode package, and lighting device
Embodiments relates to an ultraviolet light emitting diode, a method of manufacturing an ultraviolet light emitting diode, a light emitting diode package, and a...
US-1,024,3102 Ultra-wideband light emitting diode and optical detector comprising indium gallium arsenide phosphide and...
Devices, systems, and methods for providing wireless personal area networks (PANs) and local area networks (LANs) using visible and near-visible optical...
US-1,024,3101 Vertical structure LEDs
A light emitting diode can include a metal support layer: a GaN-based semiconductor structure having a less than 5 microns thickness on the metal support layer,...
US-1,024,3100 Semiconductor layer including compositional inhomogeneities
A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap...
US-1,024,3099 Light-emitting device
A semiconductor device comprises a substrate comprising a surface area having a plurality of patterns therein, wherein the plurality of patterns comprises a...
US-1,024,3098 Substrate features for enhanced fluidic assembly of electronic devices
Embodiments are related to systems and methods for fluidic assembly, and more particularly to systems and methods for assuring deposition of elements in...
US-1,024,3097 Fluidic assembly using tunable suspension flow
Embodiments are related to systems and methods for fluidic assembly, and more particularly to systems and methods for increasing the efficiency of fluidic...
US-1,024,3096 Crack-tolerant photovoltaic cell structure and fabrication method
After forming an absorber layer containing cracks over a back contact layer, a passivation layer is formed over a top surface of the absorber layer and interior...
US-1,024,3095 Moldable photovoltaic solar cell module
A method is provided for making a molded photovoltaic module. The module includes a flexible polymeric flex-circuit substrate having an electrically conductive...
US-1,024,3094 Method for producing a conductive multiple substrate stack
A method for producing a multiple-substrate stack from an, in particular wavelength-sensitive, semiconductor substrate and at least one further, in particular...
US-1,024,3093 Electromagnetic sensor of oxygen-rich vanadium-oxide and system thereof
Electromagnetic sensor of an oxygen-rich vanadium oxide and the system thereof are provided. The electromagnetic sensor of an oxygen-rich vanadium oxide...
US-1,024,3092 Photovoltaic device including a p-n junction and method of manufacturing
A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic...
US-1,024,3091 Device layer thin-film transfer to thermally conductive substrate
A semiconductor structure includes a thin-film device layer, an optoelectronic device disposed in the thin-film device layer, and a surrogate substrate...
US-1,024,3090 Solar cell and method for manufacturing the same
Discussed is a method for manufacturing a solar cell. The method includes forming a tunneling layer on a semiconductor substrate; forming a semiconductor layer...
US-1,024,3089 Photovoltaic device for generating electrical power using nonlinear multi-photon absorption of incoherent radiation
Methods, systems, and photovoltaic devices converting broad spectrum incoherent optical power into electrical power by utilizing nonlinear multi-photon...
US-1,024,3088 Transaction card for transferring solar power
A transaction card is provided for communicating data relating to a transaction. The transaction card includes a solar layer, a transaction card layer, and a...
US-1,024,3087 Bifacial solar cell module with backside reflector
A bifacial solar cell module includes solar cells that are protected by front side packaging components and backside packaging components. The front side...
US-1,024,3086 Electronic memory devices
A memory cell for storing one or more bits of information has a control gate, a source terminal and a drain terminal. A semiconductor substrate is located...
US-1,024,3085 Semiconductor device and method of manufacturing same
An object is to provide a reliability-improved semiconductor device having a MONOS memory that rewrites data by injecting carriers into a charge storage...
US-1,024,3084 Method for fabricating a flash memory
A method for fabricating semiconductor device is disclosed. First, a substrate is provided, and a dielectric stack is formed on the substrate, in which the...
US-1,024,3083 Semiconductor device and method for manufacturing semiconductor device
A semiconductor device (1001) includes: a thin film transistor (101) including an oxide semiconductor layer (16) including a channel region, and a source...
US-1,024,3082 Thin-film transistor array panel having thin-film transistors with corrosiveness resistance
The present invention disclosure proposes a TFT array panel includes a back-channel etching structure TFT having a semiconductor layer made from a tin-silicon...
US-1,024,3081 Semiconductor device and method for manufacturing semiconductor device
A highly reliable semiconductor device including a transistor using an oxide semiconductor is provided. In a semiconductor device including a bottom-gate...
US-1,024,3080 Selective deposition utilizing sacrificial blocking layers for semiconductor devices
Methods of selectively depositing high-K gate dielectric on a semiconductor structure are disclosed. The method includes providing a semiconductor structure...
US-1,024,3079 Utilizing multilayer gate spacer to reduce erosion of semiconductor fin during spacer patterning
FinFET devices comprising multilayer gate spacers are provided, as well as methods for fabricating FinFET devices in which multilayer gate spacers are utilized...
US-1,024,3078 Carrier confinement for high mobility channel devices
An embodiment includes a device comprising: a trench that includes a doped trench material having: (a)(i) a first bulk lattice constant and (a)(ii) at least one...
US-1,024,3077 FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth
A method forming a semiconductor device that in one embodiment includes forming a gate structure on a channel region of fin structures, and forming a flowable...
US-1,024,3076 Ternary barristor with schottky junction graphene semiconductor
Disclosed is a graphene-based ternary barristor using a Schottky junction graphene semiconductor. A graphene channel layer is doped with N-type and N-type...
US-1,024,3075 Junction FET semiconductor device with dummy mask structures for improved dimension control and method for...
A method for semiconductor devices on a substrate includes using gate structures which serve as active gate structures in a MOSFET region, as dummy gate...
US-1,024,3074 Vertical vacuum channel transistor
A method of fabricating features of a vertical transistor include performing a first etch process to form a first portion of a fin in a substrate; depositing a...
US-1,024,3073 Vertical channel field-effect transistor (FET) process compatible long channel transistors
Embodiments of the present invention provide methods and systems for co-integrating a short-channel vertical transistor and a long-channel transistor. One...
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