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Patent # Description
US-1,024,9674 Semiconductor device and electronic apparatus including a semiconductor device having bonded sensor and logic...
A solid-state imaging device has a sensor substrate having a pixel region on which photoelectric converters are arrayed; a driving circuit provided on a front...
US-1,024,9673 Rear-face illuminated solid state image sensors
A microelectronic unit includes a semiconductor element having a front surface to which a packaging layer is attached, and a rear surface remote from the front...
US-1,024,9672 Image pickup apparatus, semiconductor apparatus, and image pickup unit
An image pickup apparatus includes: an image pickup chip including a light receiving section and electrode pads, on a first main face, and a plurality of...
US-1,024,9671 Low-noise CMOS image sensor
A CMOS pixel including a photodiode having a terminal connected to a potential GND and another terminal connected to a sense node by a first MOS transistor; a...
US-1,024,9670 Solid-state imaging device and electronic apparatus with multiple layers of signal lines and interconnect lines
The present disclosure relates to a solid-state imaging device that can reduce crosstalk interference, and to an electronic apparatus. In the upper chip, VSLs,...
US-1,024,9669 Image sensors having two or more light sensitive subareas for receiving two or more images of a sample from a...
Among other things, an integral image sensor includes a sensor surface having a surface area at which light-sensitive pixels are arranged in rows and columns....
US-1,024,9668 X-ray sensor, x-ray detector system and x-ray imaging system
There is provided an x-ray sensor (21) comprising an active detector region including a plurality of detector diodes (22) at a first side of the sensor, and a...
US-1,024,9666 Image sensors including shifted isolation structures
Image sensors are provided. An image sensor includes a semiconductor substrate including a pixel region. The image sensor includes first and second...
US-1,024,9665 Solid-state imaging device and method of manufacturing solid-state imaging device
A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving...
US-1,024,9664 Optical glass
To provide an optical glass, being an optical glass manufactured by a cutting method using laser light, more increases strength to make it difficult to cause...
US-1,024,9663 Solid-state imaging device, manufacturing method thereof, and camera with arranged pixel combinations alternatively
A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel...
US-1,024,9662 Multispectral imaging device and manufacturing method thereof
The present disclosure provides a multispectral imaging device, comprising the following layers and components arranged in sequence following a direction of...
US-1,024,9661 Imaging devices with dummy patterns
An imaging device is provided. The imaging device includes a plurality of photoelectric conversion elements formed on a substrate in an active area. A microlens...
US-1,024,9660 Split-gate conditional-reset image sensor
In a pixel array within an integrated-circuit image sensor, a pixel (870) includes a photodetector (260) and floating diffusion (262) formed within a substrate....
US-1,024,9659 Solid-state image pickup device
A solid-state image pickup device 1 according to the present invention includes a semiconductor substrate 2 on which a pixel 20 composed of a photodiode 3 and a...
US-1,024,9658 Imaging device comprising a circuit having dual regions each with a transistor electrically connected to a...
An imaging device which offers an image with high quality and is suitable for high-speed operation is provided. The imaging device includes a first region to an...
US-1,024,9657 Solid-state image sensing device, drive method, and electronic apparatus
The present disclosure relates to a solid-state image sensing device, a drive method, and an electronic apparatus that are configured to suppress the color...
US-1,024,9656 Charge packet signal processing using pinned photodiode devices
An image sensor may include an array of image pixels coupled to analog-to-digital conversion circuitry formed from pinned photodiode charge transfer circuits....
US-1,024,9654 Manufacturing method of top-gate TFT and top-gate TFT
The invention provides a manufacturing method of top-gate TFT and top-gate TFT. The manufacturing method forms first and second insulating layers sequentially...
US-1,024,9653 Display panel and manufacturing method thereof
A display panel and a manufacturing method thereof are provided. The display panel includes a color resist layer, a protective layer and a light-shielding...
US-1,024,9652 Manufacturing method of flexible TFT substrate
The invention provides a manufacturing method of flexible TFT substrate, forming first contact hole above two sides of the active layer and buffer hole on...
US-1,024,9651 Manufacturing method of semiconductor device
A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a...
US-1,024,9650 Display device
A display device includes a pixel including a thin film transistor, and an under layer below the thin film transistor. The thin film transistor includes a first...
US-1,024,9649 Thin film transistor array substrate and display panel
A thin film transistor array substrate and a display panel are provided. A parasitic capacitor is formed from a common line and a data line, and a capacitance...
US-1,024,9648 Manufacturing methods of array substrates and array substrates
The present disclosure relates to an array substrate and the manufacturing method thereof. The manufacturing method includes the steps including: forming a...
US-1,024,9647 Semiconductor device and display device comprising oxide semiconductor layer
An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a...
US-1,024,9646 Display device fabricated with fewer masks and method of manufacturing the same
A display device includes: a substrate including first and second light-blocking areas, and a pixel area; a light-blocking pattern at least partially at the...
US-1,024,9645 Semiconductor device, display device including the semiconductor device, display module including the display...
To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes...
US-1,024,9644 Semiconductor device and manufacturing method of the same
An object is to provide a display device with high productivity by reducing the number of masks and the number of steps. Another object is to provide a display...
US-1,024,9643 Hard copied semiconductor device having a resistance-variable non-volatile element
Provided are a semiconductor device and a method of manufacturing the semiconductor device which enable a hard copy of a reconfigurable circuit, which employs a...
US-1,024,9642 Semiconductor memory device
According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, a plurality of pillar portions, and an interconnection portion....
US-1,024,9641 Semiconductor memory device and method for manufacturing same
A semiconductor memory device according to one embodiment includes a substrate, a stacked body provided on a first-direction side of the substrate, a...
US-1,024,9640 Within-array through-memory-level via structures and method of making thereof
A semiconductor structure includes a memory-level assembly located over a substrate and including at least one alternating stack and memory stack structures...
US-1,024,9639 Semiconductor memory device
A semiconductor memory device according to an embodiment includes: first and second memory columnar bodies aligned in a second direction intersecting a first...
US-1,024,9638 Semiconductor device
To downsize a semiconductor device that includes a non-volatile memory and a capacitive element on a semiconductor substrate. In a capacitive element region of...
US-1,024,9637 Manufacturing method of semiconductor device
A manufacturing method of a semiconductor device includes: forming a tunnel oxide layer and a charge-storage layer in a region of a flash memory transistor;...
US-1,024,9636 Vertical memory devices and methods of manufacturing the same
A vertical memory device includes a channel, a dummy channel, a plurality of gate electrodes, and a support pattern. The channel extends in a first direction...
US-1,024,9635 Three-dimensional semiconductor memory device and method for manufacturing the same
According to one embodiment, a semiconductor memory device includes a substrate, semiconductor pillars, first electrode films, a second electrode film, a first...
US-1,024,9634 Semiconductor device and method of manufacturing the same
Provided herein may be a semiconductor device. The semiconductor device may include a stack. The semiconductor device may include channel layers including...
US-1,024,9633 Flash memory device
An integrated circuit product includes a silicon-on-insulator (SOI) substrate and a flash memory device positioned in a first area of the SOI substrate. The SOI...
US-1,024,9632 Simple integration of non-volatile memory and complementary metal oxide semiconductor
A method that allows integrating complementary metal oxide semiconductor (CMOS) transistors and a non-volatile memory (NVM) transistor on a single substrate is...
US-1,024,9631 Split gate non-volatile flash memory cell having metal gates
A memory device including a silicon substrate having a planar upper surface in a memory cell area and an upwardly extending silicon fin in a logic device area....
US-1,024,9630 Structure featuring ferroelectric capacitance in interconnect level for steep sub-threshold complementary metal...
After forming a first functional gate stack located on a first body region of a first semiconductor material portion located in a first region of a substrate...
US-1,024,9629 Method for forming buried word lines
The present invention provides a method for forming buried word lines. Firstly, a substrate is provided, having a plurality of shallow trench isolations...
US-1,024,9628 Semiconductor device having buried gate structure and method of fabricating the same
A semiconductor device includes a device isolation region defining an active region in a substrate, and gate structures buried in the active region of the...
US-1,024,9627 Semiconductor device
A semiconductor device is provided. The semiconductor device includes an upper interlayer insulating layer disposed on a substrate. A first electrode spaced...
US-1,024,9626 Semiconductor memory device including multilayer wiring layer
The memory capacity of a DRAM is enhanced. A semiconductor memory device includes a driver circuit including part of a single crystal semiconductor substrate, a...
US-1,024,9625 Coated printed electronic devices exhibiting improved yield
A coated, printed electronic device may comprise a plurality of contact pads arranged in a pattern, a plurality of electrode traces arranged in another pattern,...
US-1,024,9624 Semiconductor structure containing low-resistance source and drain contacts
Semiconductor structures having a source contact and a drain contact that exhibit reduced contact resistance and methods of forming the same are disclosed. In...
US-1,024,9623 Semiconductor integrated circuit
A semiconductor integrated circuit includes semiconductor substrate having a plurality of first potential side areas, including a first two adjacent first...
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