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Patent # Description
US-1,024,9520 Transfer printing using ultrasound
Embodiments of the invention pertain to methods useful in transfer printing of small objects, like micro-LEDs from one substrate to another using acoustic or...
US-1,024,9519 Light-irradiation heat treatment apparatus
A semiconductor wafer held by a holder within a chamber is irradiated and heated with halogen light emitted from multiple halogen lamps. A cylindrical louver...
US-1,024,9518 Polishing device and polishing method
According to one embodiment, a polishing device includes a stage holding a wafer, a polishing part polishing a film formed on a circumferential edge portion of...
US-1,024,9517 Substrate processing apparatus
A substrate processing apparatus has a labyrinth around a processing liquid nozzle above a nozzle gap, and a seal gas is supplied to the labyrinth to seal the...
US-1,024,9516 Underfill dispensing using funnels
Arrays of objects on a substrate having void-free underfill as well as methods and systems of forming the same include forming a void-free layer of underfill...
US-1,024,9515 Electronic device package
Electronic device package technology is disclosed. In one example, an electronic device package can include a substrate, an electronic component disposed on the...
US-1,024,9514 Semiconductor device and manufacturing method thereof
A semiconductor device includes a semiconductor element, a substrate formed with a recess in a main surface, a conductive layer formed on the substrate and...
US-1,024,9513 Electronic device, electronic apparatus, moving object, and method for manufacturing electronic device
An electronic device includes: an electronic component including an external connection terminal; and a lead frame (metal member) connected to the external...
US-1,024,9512 Tunable TiOxNy hardmask for multilayer patterning
Lithographic multilayer structures are disclosed that generally include an organic planarizing layer and a tunable titanium oxynitride layer on the organic...
US-1,024,9511 Ceramic showerhead including central gas injector for tunable convective-diffusive gas flow in semiconductor...
An inductively coupled plasma processing apparatus comprises a vacuum chamber, a vacuum source, and a substrate support on which a semiconductor substrate is...
US-1,024,9510 Etching method
An etching method including the following steps is provided. A substrate is provided first. A first region and a second region adjacent to the first region are...
US-1,024,9509 Substrate cleaning method and system using atmospheric pressure atomic oxygen
Provided is a method and system for cleaning a substrate with a cleaning system comprising a pre-treatment system using an atomic oxygen generator. The...
US-1,024,9508 Method for preventing excessive etching of edges of an insulator layer
A method for manufacturing a semiconductor device includes forming a first semiconductor layer on a semiconductor substrate, forming a first insulator layer on...
US-1,024,9507 Methods for selective etching of a silicon material
The present disclosure provides methods for etching features in a silicon material includes performing a remote plasma process formed from an etching gas...
US-1,024,9506 GaN-on-si semiconductor device structures for high current/ high voltage lateral GaN transistors and methods of...
A GaN-on-Si device structure and a method of fabrication are disclosed for improved die yield and device reliability of high current/high voltage lateral GaN...
US-1,024,9505 Method for treating etching solution
A method for treating an etching solution in order to circulate and reuse an etching solution used in etching treatment of silicon includes (1) selectively...
US-1,024,9504 Etching and mechanical grinding film-layers stacked on a semiconductor substrate
In some embodiments, a method includes wet-etching a first film layer of a plurality of film layers stacked on a semiconductor substrate, the wet-etching of the...
US-1,024,9503 Printed circuit board, semiconductor package and method of manufacturing the same
Disclosed is a printed circuit board including an insulating layer, a circuit layer formed on a lower surface of the insulating layer, and a metal post...
US-1,024,9502 Low resistance source drain contact formation with trench metastable alloys and laser annealing
Techniques for forming a metastable phosphorous P-doped silicon Si source drain contacts are provided. In one aspect, a method for forming n-type source and...
US-1,024,9501 Single process for liner and metal fill
After forming a contact opening in a dielectric material layer located over a substrate, a metal liner layer comprising a nitride of an alloy and a metal...
US-1,024,9500 Method for manufacturing substrate for semiconductor device
A substrate for semiconductor device includes a substrate, a reaction layer provided on a back surface of the substrate, a transmission preventing metal having...
US-1,024,9499 Method for manufacturing a semiconductor device comprising a thin semiconductor wafer
A method for manufacturing a vertical power semiconductor device is provided, wherein a first impurity is provided at the first main side of a semiconductor...
US-1,024,9498 Method for using heated substrates for process chemistry control
A method of controlling doping of a substrate, the method comprising: providing the substrate in a process chamber of a doping system; performing a doping...
US-1,024,9497 Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a gate insulating film provided on a...
US-1,024,9496 Narrowed feature formation during a double patterning process
Interconnect structures and methods of fabricating an interconnect structure. A first mandrel line, a second mandrel line, and a non-mandrel line between the...
US-1,024,9495 Diamond like carbon layer formed by an electron beam plasma process
Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a...
US-1,024,9494 Free-standing substrate, function element and method for producing same
A self-supporting substrate includes a first nitride layer grown by a hydride vapor deposition method or ammonothermal method and comprising a nitride of one or...
US-1,024,9493 Method for depositing a layer on a semiconductor wafer by vapor deposition in a process chamber
A method for depositing a layer on a semiconductor wafer by vapor deposition in a process chamber, involves removing native oxide from a surface of the wafer;...
US-1,024,9492 Fabrication of compound semiconductor structures
A semiconductor substrate, comprising a first semiconductor material, is provided and an insulating layer is formed thereon; an opening is formed in the...
US-1,024,9491 Method and apparatus for forming device quality gallium nitride layers on silicon substrates
Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400.degree. C. The substrate and film materials...
US-1,024,9490 Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and...
A single fin or a pair of co-integrated n- and p-type single crystal electronic device fins are epitaxially grown from a substrate surface at a bottom of one or...
US-1,024,9489 Use of silyl bridged alkyl compounds for dense OSG films
Low dielectric organosilicon films are deposited by a process comprising the steps of: providing a substrate within a vacuum chamber; introducing into the...
US-1,024,9488 Semiconductor devices with same conductive type but different threshold voltages and method of fabricating the same
A semiconductor device with three transistors of same conductive type but different threshold voltage is provided in the present invention, wherein the first...
US-1,024,9487 Substrate processing method
A substrate processing method includes a substrate holding step of holding a substrate in a horizontal orientation by means of a substrate holding unit, a...
US-1,024,9486 Method for polishing semiconductor substrate
Proposed is a method for polishing a semiconductor substrate including an intermediate polishing step of polishing in such a way that the number of surface...
US-1,024,9485 Pulsed plasma analyzer and method for analyzing the same
A pulsed plasma analyzer includes a pulse modulator that controls an off-time of a pulsed plasma that includes a target radical, an optical spectrometer that...
US-1,024,9484 Electrospray ionization interface to high pressure mass spectrometry and related methods
An electrospray ionization (ESI)-mass spectrometer analysis systems include an ESI device with at least one emitter configured to electrospray ions and a mass...
US-1,024,9483 Ultra-compact mass analysis device and ultra-compact particle acceleration device
A mass analyzer includes a main substrate, an upper substrate adhered to the main substrate, and a lower substrate. A mass analysis room (cavity) is formed in...
US-1,024,9482 Time of flight mass spectrometer
A time of flight mass spectrometer that includes a first electrode; and a second electrode that is spaced apart from the first electrode. The ion source is...
US-1,024,9481 System and method for fusing chemical detectors
Two complementary approaches to the science of IMS technology, IMS and differential IMS (DIMS), are combined into a single instrument to provide improvements in...
US-1,024,9480 Tandem mass spectrometry data processing system
Peak information is collected from an MS/MS spectrum in which the product ions generated from ions originating from a plurality of compounds are mixed. Using...
US-1,024,9479 Magnet configurations for radial uniformity tuning of ICP plasmas
Embodiments described herein generally relate to plasma process apparatus. In one embodiment, the plasma process apparatus includes a plasma source assembly....
US-1,024,9478 Substrate processing apparatus
A substrate processing apparatus includes a chamber including a process chamber for performing a process on a substrate by a gas introduced thereto and an...
US-1,024,9477 Ion implanter and ion implantation method
An ion implanter includes a plasma shower device configured to supply electrons to an ion beam with which a wafer is irradiated. The plasma shower device...
US-1,024,9475 Cooling mechanism utlized in a plasma reactor with enhanced temperature regulation
Embodiments of the invention generally provide a cooling mechanism utilized in a plasma reactor that may provide efficient temperature control during a plasma...
US-1,024,9474 Charged particle beam device
The scanning charged particle beam microscope according to the present application is characterized in that, in acquiring an image of the FOV (field of view),...
US-1,024,9473 Transporting apparatus and method of transporting using the same
A transporting apparatus configured to transport an object to a storage container includes: a transporting rod having one end configured to connect to the...
US-1,024,9472 Charged particle beam device, charged particle beam influencing device, and method of operating a charged...
A charged particle beam device is described, which includes: a beam source configured to generate a charged particle beam propagating along an optical axis (A);...
US-1,024,9471 Composite charged particle beam apparatus and control method thereof
The present invention relates to an automatic sequence for repeatedly performing SEM observation and FIB processing by using a low acceleration voltage for a...
US-1,024,9470 Symmetrical inductively coupled plasma source with coaxial RF feed and coaxial shielding
A plasma reactor has an overhead multiple coil inductive plasma source with symmetric RF feeds and symmetrical RF shielding around the symmetric RF feeds.
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