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Patent # Description
US-1,029,7734 LED module
An LED module is provided with a lead, an LED chip mounted on the obverse surface of the lead, and a case covering at least a part of the lead. The case has a...
US-1,029,7733 High-voltage light emitting diode chip and fabrication method
A high-voltage light emitting diode and fabrication method thereof, in which, the liquid insulating material layer/the liquid conducting material layer, after...
US-1,029,7732 Light emitting device package and lighting system including the same
Provided are a light emitting device package and a lighting system including the light emitting device package. The light emitting device package includes a...
US-1,029,7731 Light emitting diode constructions and methods for making the same
Light emitting diode (LED) constructions comprise an LED having a pair of electrical contacts along a bottom surface. A lens is disposed over the LED and covers...
US-1,029,7730 LED device, method for manufacturing an LED device, and LED display module
An LED device, a method for manufacturing an LED device, and an LED display module are provided. The LED device includes an LED bracket, an LED chip and an...
US-1,029,7729 Optoelectronics semiconductor component
An optoelectronic semiconductor component having a light source, which emits primary radiation, a housing, and electrical terminals, wherein a conversion...
US-1,029,7728 Molded package for light emitting device
The present invention provides a molded package for a light emitting device including a molded resin and first and second leads, the exposed surface of the...
US-1,029,7727 Converter material, method for producing a converter material, and optoelectronic component
A converter material includes a porous inorganic matrix material having a multiplicity of pores. A multiplicity of inorganic nanoparticles are applied on the...
US-1,029,7726 Filling material, resin composition, package, light-emitting device, and methods of manufacturing same
A filling material for a resin composition includes a base material and a coating material coating at least a portion of a surface of a particle of the base...
US-1,029,7725 Light emitting package having phosphor layer over a transparent resin layer
The embodiment relates to a semiconductor device package, a method of manufacturing the semiconductor device package, and a light source apparatus. According to...
US-1,029,7724 Package for mounting light-emitting device
A light-emitting device mounting package includes a substrate, a frame extending upward from the substrate and surrounding a mounting portion, a lead plate...
US-1,029,7723 Light emitting device
A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between...
US-1,029,7722 Micro-light emitting diode with metal side mirror
Light emitting diodes and display systems are disclosed. In an embodiment a light emitting diode (150) includes a p-n diode (120) including a mesa structure...
US-1,029,7721 Multistep deposition of zinc oxide on gallium nitride
A method for fabricating a Zinc Oxide (ZnO) conductive film on a semiconductor material, including depositing a doped ZnO seed layer on a diode, wherein the ZnO...
US-1,029,7720 Light emitting diode and method of manufacturing the same
The present invention relates to a light emitting diode and a method of manufacturing same. The light emitting diode includes: a first conductive semiconductor...
US-1,029,7719 Micro-light emitting diode (micro-LED) device
A micro-light emitting diode (micro-LED) device includes a receiving substrate and a micro-LED. The micro-LED includes a first type semiconductor layer, a...
US-1,029,7718 Light-emitting device
A light-emitting device includes a substrate including an upper surface; a light-emitting stack including a first semiconductor layer, a second semiconductor...
US-1,029,7717 Light-emitting device
A light-emitting device includes: a semiconductor layered structure; a conductive substrate disposed under the semiconductor layered structure; one or more...
US-1,029,7716 Light emitting device and light emitting module
A light emitting device disclosed in an embodiment includes: a light emitting chip including a plurality of semiconductor layers and first and second electrodes...
US-1,029,7715 Nitride semiconductor ultraviolet light-emitting element
A nitride semiconductor ultraviolet light-emitting element comprises an underlying portion that includes a substrate that is composed of sapphire and has a...
US-1,029,7714 Heterogeneous tunneling junctions for hole injection in nitride based light-emitting devices
Light-emitting devices having a multiple quantum well (MQW) pin diode structure and methods of making and using the devices are provided. The light-emitting...
US-1,029,7713 Light-emitting devices and displays with improved performance
Light-emitting devices and displays with improved performance are disclosed. A light-emitting device includes a first electrode including an anode opposite a...
US-1,029,7712 Micro LED display
A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure...
US-1,029,7711 Integrated LED and LED driver units and methods for fabricating the same
Integrated LED and LED driver units and methods for fabricating integrated LED and LED driver units and products with a plurality of integrated LED and LED...
US-1,029,7710 Method of processing wafer
A method of processing a wafer includes applying a laser beam having a wavelength that is transmittable through a sapphire substrate to the wafer while...
US-1,029,7709 Photovoltaic devices with an interfacial band-gap modifying structure and methods for forming the same
A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The...
US-1,029,7708 Surface passivation for PhotoDetector applications
A photodetector includes a detector material having an upper layer, a lower layer, and at least one sidewall. Also included as part of the photodetector are a...
US-1,029,7707 Thin film photovoltaic cell system and method of manufacture
A photovoltaic structure for absorption from the solar spectrum, includes a light transmitting substrate layer, a transparent electrode layer on the substrate...
US-1,029,7706 Conformal photoconductive switch package
A photoconductive switch is disclosed having a substrate, an electrode formed on the substrate, and a dielectric formed adjacent to the substrate and the...
US-1,029,7705 Avalanche photodiode
To obtain high linearity without sacrificing light-receiving sensitivity and a high speed, an avalanche photodiode includes an avalanche layer (103) formed on a...
US-1,029,7704 Low noise detectors for astronomy
Methods, systems, and apparatus that filters noise within a signal collected by a detector assembly. The detector assembly includes a first semiconductor layer...
US-1,029,7703 Materials, systems and methods for optoelectronic devices
A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two...
US-1,029,7702 Polycrystalline silicon column and polycrystalline silicon wafer
A polycrystalline silicon column is provided. The polycrystalline silicon column includes a plurality of silicon grains grown along a crystal-growing direction....
US-1,029,7701 Optical switching device, optical switching apparatus
An optical switching device includes: an optical absorbing layer having a first superlattice structure and responding to an incident light; an excitation layer...
US-1,029,7700 Thermal detectors using graphene and oxides of graphene and methods of making the same
Radiation detecting and sensing systems using graphene and methods of making the same are provided; including a substrate, a single or multiple layers of...
US-1,029,7699 In-plane resonant-cavity infrared photodetectors with fully-depleted absorbers
Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the...
US-1,029,7698 Articles, coating compositions, and methods
There is provided a coating composition comprising nonspherical nanoparticles; spherical nanoparticles; optionally hydrophilic groups and optional an...
US-1,029,7697 Coded aperture system of imaging with a plurality of detectors in a spaced-apart configuration
A system for imaging at least one source of radiation with a mask and a plurality of detectors. The mask is characterized by a base pattern and configured to...
US-1,029,7696 Schottky diode including an insulating substrate and a schottky diode unit and method for making the same
A Schottky diode includes an insulating substrate and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the...
US-1,029,7695 Thin film transistor and method for detecting pressure by utilizing the same and touch apparatus
A thin film transistor and a method for detecting a pressure by utilizing the thin film transistor, and a touch apparatus are provided. The thin film transistor...
US-1,029,7694 Semiconductor device and method for manufacturing same
A semiconductor device includes a first thin film transistor (101) on a substrate (10), the first thin film transistor including: a sub-gate electrode (12); a...
US-1,029,7693 Semiconductor device
One of the objects is to improve display quality by reduction in malfunctions of a circuit. In a driver circuit formed using a plurality of pulse output...
US-1,029,7692 Manufacturing method of TFT substrate and TFT substrate
The invention provides a manufacturing method of TFT substrate and a TFT substrate. The method provides a dual-gate structure symmetrically disposed on both...
US-1,029,7691 Method for forming semiconductor device with P/N stacked layers
A semiconductor device is provided and includes a semiconductor fin protruding from a semiconductor substrate. The semiconductor fin includes plural pairs of...
US-1,029,7690 Method of forming a contact structure for a FinFET semiconductor device
A semiconductor device includes a gate structure formed over a channel region of the semiconductor device, a source/drain region adjacent the channel region,...
US-1,029,7689 Precise control of vertical transistor gate length
A transistor includes a vertical channel fin on a bottom source/drain region. The vertical channel fin includes a base portion and an upper portion. The base...
US-1,029,7688 Vertical field effect transistor with improved reliability
Provided is a method for forming a semiconductor structure. In embodiments of the invention, the method includes forming a semiconductor fin on a source/drain...
US-1,029,7687 Semiconductor device including vertical-type field effect transistors and method of fabricating the same
A semiconductor device includes a substrate with an upper surface and a lower surface, and first to third active patterns extending from the upper surface of...
US-1,029,7686 Tapered vertical FET having III-V channel
A vertical field effect transistor includes a first source/drain region formed on or in a substrate. A tapered fin is formed a vertical device channel and has a...
US-1,029,7685 Semiconductor device
According to an embodiment, a semiconductor device includes a first electrode, a second electrode, a first semiconductor region, a plurality of second...
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