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Patent # Description
US-1,029,7684 Bidirectional power MOSFET structure with a cathode short structure
A field effect device includes a semiconductor body separating a source and a drain, both source and drain coupled to the semiconductor body. An insulated...
US-1,029,7683 Method of manufacturing a semiconductor device having two types of gate electrodes
In mesa regions between adjacent trenches disposed in an n.sup.--type drift layer and in which a first gate electrode is disposed via a first gate insulating...
US-1,029,7682 Semiconductor device and manufacturing method of semiconductor device
A semiconductor device includes one or more trench gates extending in a first direction in plan view, one or more first-conductivity-type regions spaced away...
US-1,029,7680 Bipolar transistor and method for producing the same
A bipolar transistor has a subcollector layer and a stack of collector, base, and emitter layers on the subcollector layer. On the subcollector layer are...
US-1,029,7679 Method for manufacturing semiconductor device
Disclosed is a method to manufacture a thin film transistor having an oxide semiconductor as a channel formation region. The method includes; forming an oxide...
US-1,029,7678 Method for manufacturing thin film transistor
The present disclosure provides a method for manufacturing a thin film transistor comprising, forming a pattern of an active layer on a substrate through a...
US-1,029,7677 LDMOS power semiconductor device and manufacturing method of the same
Methods are directed to forming an electronic semiconductor device that includes a body having a first side and a second side opposite to one another and...
US-1,029,7676 Partially biased isolation in semiconductor device
Embodiments of a device are provided, including a semiconductor substrate including an active device area; a body region disposed in the semiconductor substrate...
US-1,029,7675 Dual-curvature cavity for epitaxial semiconductor growth
Methods of forming a field-effect transistor and structures for a field-effect transistor. A gate structure is formed that overlaps with a channel region in a...
US-1,029,7674 Method for manufacturing a transistor and method for manufacturing a ring oscillator using the same
In a method for manufacturing a transistor, a gate structure may be formed on a semiconductor substrate. A first material layer may be formed on the gate...
US-1,029,7673 Methods of forming semiconductor devices including conductive contacts on source/drains
Methods of forming a semiconductor device are provided. The methods may include forming a plurality of fin-shaped channels on a substrate, forming a gate...
US-1,029,7672 Triple gate technology for 14 nanometer and onwards
A method of forming a 14 nm triple gate by adding a MG in the dual gate process and the resulting device are provided. Embodiments include forming an EG region,...
US-1,029,7671 Uniform threshold voltage for nanosheet devices
A method is presented for forming a nanosheet structure having a uniform threshold voltage (Vt). The method includes forming a conductive barrier surrounding a...
US-1,029,7670 Contact resistance reduction employing germanium overlayer pre-contact metalization
Techniques are disclosed for forming transistor devices having reduced parasitic contact resistance relative to conventional devices. The techniques can be...
US-1,029,7669 Substrate resistor and method of making same
A semiconductor structure can include a resistor on a substrate formed simultaneously with other devices, such as transistors. A diffusion barrier layer formed...
US-1,029,7668 Vertical transport fin field effect transistor with asymmetric channel profile
A method of forming a plurality of vertical fin field effect transistors is provided. The method includes forming a first vertical fin on a first region of a...
US-1,029,7667 Fin field-effect transistor for input/output device integrated with nanosheet field-effect transistor
A method of forming a semiconductor structure includes forming a nanosheet stack disposed over a first portion of a substrate and a fin channel material...
US-1,029,7666 Semiconductor device with a well region
Supposing x is defined as a position of an end of a depletion layer extending when a rated voltage V [V] is applied to a rear surface electrode, W.sub.1 is...
US-1,029,7665 Co-integration of elastic and plastic relaxation on the same wafer
An n-doped field effect transistor (nFET) section of an integrated device logic region is provided. The nFET section includes a semiconductor substrate, a layer...
US-1,029,7664 Nanosheet transistor with uniform effective gate length
A method of forming nanosheet and nanowire transistors includes the formation of alternating epitaxial layers of silicon germanium (SiGe) and silicon (Si),...
US-1,029,7663 Gate fill utilizing replacement spacer
A method of forming a semiconductor structure includes forming outer spacers surrounding a dummy gate, the dummy gate being disposed over a channel stack...
US-1,029,7662 Dielectrically isolated semiconductor device and method for manufacturing the same
The present disclosure relates to a dielectrically isolated semiconductor device and a method for manufacturing the same. The dielectrically isolated...
US-1,029,7661 High voltage resistor device
The present disclosure relates to a high voltage resistor device that is able to receive high voltages using a small footprint, and an associated method of...
US-1,029,7660 Semiconductor device
A semiconductor device includes: a semiconductor substrate including a drift region of a first conductivity type; an emitter region of the first conductivity...
US-1,029,7659 Memory devices including capacitor structures having improved area efficiency
Semiconductor structures including a plurality of conductive structures having a dielectric material therebetween are disclosed. The thickness of the dielectric...
US-1,029,7658 Method and apparatus for a thin film dielectric stack
A system that incorporates teachings of the subject disclosure may include, for example, a thin film capacitor having a substrate, a first electrode layer on...
US-1,029,7656 Organic light-emitting diode display and method of manufacturing the same
An organic light-emitting diode (OLED) display and a method of manufacturing the same are disclosed. In one aspect, the display includes a plurality of pixel...
US-1,029,7655 Display apparatus and method of manufacturing display apparatus
A display apparatus includes a substrate including a display area, a peripheral area surrounding the display area, a function-adding area, of which at least a...
US-1,029,7654 Display device and electronic apparatus
A display device includes a plurality of pixels that is arrayed in a first direction and a second direction. Each pixel includes; a first sub-pixel, a second...
US-1,029,7653 Display device, method of manufacturing display device, and electronic apparatus
A display device according to the present disclosure includes: a thin film transistor with a bottom gate structure and a thin film transistor with a top gate...
US-1,029,7652 Display panel and method for manufacturing the same
A display panel including first and second sub pixel electrodes, a first light emitting unit, first and second charge generation layers, a second light emitting...
US-1,029,7651 Drive circuit and organic light-emitting diode display each having switching transistor without etch stopping...
A drive circuit, an organic light-emitting diode display, and methods for fabricating the same are provided. The drive circuit includes: a driving transistor,...
US-1,029,7650 Organic light emitting diode display device
Disclosed is an organic light emitting diode (OLED) display device including a substrate including a pixel region and a boundary region outside the pixel...
US-1,029,7649 Light-emitting device, information processing device, and imaging device
Provided is a light-emitting device and an information processing device which include a light-emitting element mounted on a housing and an optical component...
US-1,029,7648 Organic light-emitting diode display, method for fabricating the same, and display device
The disclosure discloses an Organic Light-Emitting Diode (OLED) display, a method for fabricating the same, and a display device, where a color filter layer is...
US-1,029,7647 Circular polarizer for an organic light emitting diode
An organic light-emitting diode (OLED) touch display device and a manufacturing method thereof are provided. The OLED touch display device includes an OLED...
US-1,029,7646 Display device having sub-pixel array structure
A display device according to an embodiment includes a substrate including a plurality of gate lines and a plurality of data lines crossing the plurality of...
US-1,029,7645 Arrangement of color sub-pixels for full color OLED and method of manufacturing same
A full-color display panel is provided comprising a repeating super-pixel block including four pixel units, wherein each of the pixel units has a first...
US-1,029,7644 Organic light emitting diode display device
An OLED display device includes a substrate including red, green, and blue pixel areas, a first electrode at each of the red pixel area, the green pixel area,...
US-1,029,7643 Organic light emitting display including optical assistant transporting layer and method of manufacturing the same
Disclosed is an organic light emitting display device. The organic light emitting display device includes a substrate in which at least three pixel areas are...
US-1,029,7642 Semiconductor device having data storage pattern
A semiconductor device including a data storage pattern is provided. The semiconductor device includes a first conductive line disposed on a substrate and...
US-1,029,7641 Memory device
A memory device, containing a first electrode, a second electrode and an oxide layer arranged between the first electrode and the second electrode, is produced....
US-1,029,7640 Cross-point memory with self-defined memory elements
Some embodiments include a memory device having first structures arranged in a first direction and second structures arranged in a second direction. At least...
US-1,029,7639 Electronic device and method for fabricating the same
A semiconductor device may include: a substrate; a first mold layer formed over the substrate and comprising a plurality of bottom conductive patterns connected...
US-1,029,7638 Flexible light source structure and method for manufacturing same
The present invention relates to a flexible light source structure. The flexible light source structure includes a flexible insulating layer, a conductive trace...
US-1,029,7637 Micro light-emitting diode array substrate encapsulation structure and encapsulation method thereof
The present invention provides a micro LED array substrate encapsulation structure and an encapsulation method thereof. The micro LED array substrate...
US-1,029,7636 Method for fabricating complementary metal-oxide-semiconductor image sensor
A method of fabricating an image sensor includes implanting a first dopant in a substrate, removing a portion of the substrate to define a protrusion, forming a...
US-1,029,7635 TFT and manufacturing method thereof, array substrate and manufacturing method thereof, X-ray detector and...
A TFT and manufacturing method thereof, an array substrate and manufacturing method thereof, an X-ray detector and a display device are disclosed. The...
US-1,029,7634 Composite image sensor and device comprising the composite image sensor
One embodiment provides a device, including: a composite image sensor, including: a wiring layer that processes electrical signals; a first photodiode layer...
US-1,029,7633 Photoelectric conversion device and scanner
A photoelectric conversion device, comprising a semiconductor substrate on which a plurality of pixels are arrayed, and an insulating member which is...
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